Zobrazeno 1 - 10
of 17
pro vyhledávání: '"G. N. Dash"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 2, Iss 5, Pp 77-104 (2014)
Graphene emerged in 2004 as the first 2-D material with exotic properties. Since then the literature has been flooded with reports, with physicists, material scientists, and engineers grabbing their respective shares. Numerous reviews have also been
Externí odkaz:
https://doaj.org/article/f5de51b56beb41edaa0fb70c61d5950e
Publikováno v:
International Journal of Electronics Letters. 10:308-320
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::029b826a682af837999f3d3ff8ccf699
https://doi.org/10.1080/21681724.2021.1941280
https://doi.org/10.1080/21681724.2021.1941280
Publikováno v:
Journal of Scientific Research. 12:83-91
The change in structural and mechanical behavior of polyethylene terephthalate (PET) due to 2.4 MeV proton has been studied. Radiation processing of PET polymer is carried out using different low doses such as 0.2, 2.0, and 20 kGy. The Physics of mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9e779db16509d58d982dbde801cfaf3
https://doi.org/10.3329/jsr.v12i1.43168
https://doi.org/10.3329/jsr.v12i1.43168
Publikováno v:
Advanced Science Letters. 20:838-840
High crystalline polyethylene terephthalate (PET) microfibres were irradiated (at low energy density regime, De ~10 23 eV/cm) with 2.4 MeV proton beam at 3 different fluences: 1×10 p/cm,1×10 p/cm and 1×10 p/cm. Because of irradiation, the fibre ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ffc3a9456abeb86fc0572eea6e5e9cb
https://doi.org/10.1166/asl.2014.5376
https://doi.org/10.1166/asl.2014.5376
Publikováno v:
ECTI Transactions on Electrical Engineering, Electronics, and Communications. 6:134-139
The ion implantation based impurity doping profile across a p-n junction can be represented accurately using Pearson's fourth moment approach. The high-frequency characteristics of the reverse biased p-n junction (IMPATT diodes) are computed using di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e63bc8dbc7c7dbbb4dc7353b289f99a
https://doi.org/10.37936/ecti-eec.200862.171774
https://doi.org/10.37936/ecti-eec.200862.171774
Publikováno v:
IETE Technical Review. 16:243-248
Analytical expressions for the mean-square noise voltage and noise measure of a Read-type avalanche diode in mixed mode operation are derived which reveal some new features of noise generation in MITATT (mixed tunnelling avalanche transit time) devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3934894f2f43f98c084ae75fe3e7b7fe
https://doi.org/10.1080/02564602.1999.11416836
https://doi.org/10.1080/02564602.1999.11416836
Publikováno v:
Journal of Physics D: Applied Physics. 27:1719-1726
The potentialities of the material combinations InP/GaInAs and GaAs/GaInAs for single-drift-region heterojunction impact avalanche transit time diodes are investigated by computer simulation. The results indicate better device performance for the GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c807a9af5aaf417026e4f95ae58fe89
https://doi.org/10.1088/0022-3727/27/8/021
https://doi.org/10.1088/0022-3727/27/8/021
Autor:
S. P. Pati, G. N. Dash
Publikováno v:
Applied Physics A Solids and Surfaces. 58:211-217
Double heterojunctions having the material combinations InP/GaInAs/InP, GaAs/GaInAs/GaAs and InP/GaInAsP/InP have been studied to assess their potential for double-drift region (DDR) IMPATT diodes. An accurate and realistic computer simulation progra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f929fdc114f5975ce1db494f6c7a4a9
https://doi.org/10.1007/bf00332181
https://doi.org/10.1007/bf00332181
Publikováno v:
Journal of Semiconductors. 33:113001
The electrical characterization of AlGaN/GaN interface is reported. The dependence of two-dimensional electron gas (2-DEG) density at the interface on the Al mole fraction and thickness of AlGaN layer as well as on the thickness of GaN cap layer is p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ba5afae777dc6c61f3bf13c543246b3
https://doi.org/10.1088/1674-4926/33/11/113001
https://doi.org/10.1088/1674-4926/33/11/113001
Autor:
G. N. Dash
Publikováno v:
Journal of Applied Physics. 98:106102
The avalanche noise behavior of impact avalanche transit-time (IMPATT) diodes has been modeled by Reklaitis and Reggiani [J. Appl. Phys. 97, 043709 (2005)]. They have obtained general agreement of their results with those of McIntyre [IEEE Trans. Ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::652eb829ed1a7cf0107ec9e451c18655
https://doi.org/10.1063/1.2131185
https://doi.org/10.1063/1.2131185