Zobrazeno 1 - 10
of 69
pro vyhledávání: '"G. Munns"'
Autor:
G. Munns, F. Sjöholm, Boris Lenhard, Marianne Siegfried, Daniel Rios, Anthony J. Brookes, David Fredman, Heikki Lehväslaiho
Publikováno v:
Scopus-Elsevier
The Human Genome Variation Database (HGVbase; http://hgvbase.cgb.ki.se) has provided a curated summary of human DNA variation for more than 5 years, thus facilitating research into DNA sequence variation and human phenotypes. The database has undergo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5824093b47f28365ea9e2d70453005a6
https://doi.org/10.1093/nar/gkh111
https://doi.org/10.1093/nar/gkh111
Autor:
Jasprit Singh, Marc E. Sherwin, Jagadeesh Pamulapati, M. J. Ludowise, P. K. Bhattacharya, John P. Loehr, H.C. Sun, G. Munns, D. Nichols
Publikováno v:
[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
An investigation of the properties of discrete and integrated InP-based strained In/sub x/Ga/sub 1-x/As-InP (0.33 >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52dba7d16012ffdb31791484e6fe772d
https://doi.org/10.1109/cornel.1991.169989
https://doi.org/10.1109/cornel.1991.169989
Akademický článek
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Autor:
C. Lee, L. Witkowski, H.-Q. Tserng, P. Saunier, R. Birkhahn, Dan Olson, Don Olson, G. Munns, S. Guo, B. Albert
Publikováno v:
Electronics Letters. 41:155
A comparison of RF reliability at 10 GHz on four different undoped AlGaN/GaN HEMT structures with AlGaN barrier thickness variation is presented. The output power degradation characteristics during RF stress for each structure are shown, and the resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7124cc7d6bbf5600aefd073677b3a916
https://doi.org/10.1049/el:20057802
https://doi.org/10.1049/el:20057802
Autor:
B. Albert, G. Munns, S. Guo, Hua-Quen Tserng, C. Lee, L. Witkowski, R. Birkhahn, Paul Saunier
Publikováno v:
Electronics Letters. 40:1547
The effects of RF stress on power and pulsed IV characteristics of field-plated AlGaN/GaN HEMTs fabricated on two different epitaxial structures are presented. The power degradation characteristics are shown. The RF stress resulted in different degre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03169c35e703c46f8bcd54c4c275ea1a
https://doi.org/10.1049/el:20046921
https://doi.org/10.1049/el:20046921
Akademický článek
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K zobrazení výsledku je třeba se přihlásit.
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Publikováno v:
Journal of Applied Physics. 62:3860-3865
We have studied the electrical characteristics of p‐GaAs/n‐Si heterojunction diodes grown by molecular‐beam epitaxy in an effort to investigate the quality of the heterointerface. Both Ga and As prelayers were used to initiate the growth of GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e153132f3bd674db1891a5a9f1f1b3f2
https://doi.org/10.1063/1.339230
https://doi.org/10.1063/1.339230
Publikováno v:
Crime & Delinquency. 16:409-416
The Boyle Heights Project, an attempt to reduce narcotic addiction in a Mexican-American area by employing thirty former addicts as field workers, produced the following results in its first year: a higher rate of return to addiction among the field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13af71a7c671b7aa0213ca50b4397a53
https://doi.org/10.1177/001112877001600406
https://doi.org/10.1177/001112877001600406
Publikováno v:
Social Problems. 16:456-463
This study investigates the hypothesis that a decent salary ($600 a month) paid to men who normally could not command such wages in the legitimate job market (ex-drug addicts working with practicing addicts in the community) and their social service
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::194a6e67ff9b398acde477c2f63e3b97
https://doi.org/10.1525/sp.1969.16.4.03a00060
https://doi.org/10.1525/sp.1969.16.4.03a00060
Publikováno v:
Criminology. 6:51-56
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5afcb489eb5a1159dc0af585d6730a7b
https://doi.org/10.1111/j.1745-9125.1968.tb00187.x
https://doi.org/10.1111/j.1745-9125.1968.tb00187.x