Zobrazeno 1 - 10
of 127
pro vyhledávání: '"G. M. Tsymbalov"'
Publikováno v:
International Journal of High Speed Electronics and Systems. 17:557-566
Terahertz (THz) response spectra of GaN-based field-effect transistor (FET) arrays are calculated in a self-consistent electromagmetic approach. Two types of FET arrays are considered: (i) FET array with a common channel and a large-area grating gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e11d9e4d9b1fb234eb7f30556bca833b
https://doi.org/10.1142/s0129156407004746
https://doi.org/10.1142/s0129156407004746
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 71:89-92
Using a rigorous electrodynamic approach, the spectra of the terahertz response of periodically ordered arrays of field-effect transistors with two-dimensional electron channel were calculated. It was shown that the higher-order plasmon resonances ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd614cf4a0c35686d518fcc8636d3e44
https://doi.org/10.3103/s1062873807010224
https://doi.org/10.3103/s1062873807010224
Publikováno v:
Solid State Communications. 140:529-532
We study theoretically the terahertz (THz) response of a bilayer of density-modulated two-dimensional electron gases, which we employ to model the actual double-quantum-well electron channel of a grid-gated field-effect transistor in which strong THz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddd47ed5aed3ef4627cff307ec3806c8
https://doi.org/10.1016/j.ssc.2006.09.023
https://doi.org/10.1016/j.ssc.2006.09.023
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 68:210-215
Polariton excitations associated with magnetoplasma and cyclotron oscillations in a two-dimensional (2D) electron plasma are studied. In contrast to previous works by other authors, it is concluded that there exists a low-frequency nontransmission ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0deb89a68e25735df4dd45cf2729cf44
https://doi.org/10.1134/1.567848
https://doi.org/10.1134/1.567848
Autor:
Tatiana V. Teperik, Michael C. Wanke, Norman J. M. Horing, Xomalin G. Peralta, G. M. Tsymbalov, S. J. Allen, Vyacheslav V. Popov
Publikováno v:
Semiconductor Science and Technology. 19:S71-S73
We model resonant terahertz photoconductance recently observed in field-effect transistors with a double-quantum-well (DQW) channel. Comparison of the measured THz resonant photoresponse to the calculated THz absorption spectrum establishes that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67178cd944e43a764e3f947ed35270a4
https://doi.org/10.1088/0268-1242/19/4/025
https://doi.org/10.1088/0268-1242/19/4/025
Autor:
G. M. Tsymbalov
Publikováno v:
Russian Physics Journal. 37:936-940
New equations are proposed for classical relativistic field theory, which insure a finite value for the intrinsic energy of a point charge.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9292caa5948c1f3cd4471e5ebf36feee
https://doi.org/10.1007/bf00558950
https://doi.org/10.1007/bf00558950
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 20(38)
We show that the strong amplification of terahertz radiation takes place in an array of field-effect transistors at small DC drain currents due to hydrodynamic plasmon instability of the collective plasmon mode. Planar designs compatible with standar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5311addfd7e5e0f8e0a22586a49cc2e5
https://pubmed.ncbi.nlm.nih.gov/21693816
https://pubmed.ncbi.nlm.nih.gov/21693816
Publikováno v:
5th IEEE Conference on Nanotechnology, 2005..
We study theoretically the terahertz (THz) response of a bilayer of two-dimensional electron strips modeling the double-quantum-well electron channel of a grid-gated field-effect transistor, in which strong THz photoresponse was recently observed. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a259baa1295889ede29d3beb5810543
https://doi.org/10.1109/nano.2005.1500735
https://doi.org/10.1109/nano.2005.1500735
Publikováno v:
Scopus-Elsevier
High-frequency response of field-effect transistors and diodes with two-dimensional electron channels is strongly affected by plasma oscillations in the channel. This phenomenon in its various manifestations can be used for the detection, frequency m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::baaae03c86ad835b9f7cd442ec5ac571
https://doi.org/10.1109/msmw.2004.1346027
https://doi.org/10.1109/msmw.2004.1346027