Zobrazeno 1 - 5
of 5
pro vyhledávání: '"G. M. Storti"'
Autor:
Ji-Guang Zhang, Z. L. Hua, G. M. Storti, P. K. Soltani, Manfred Wuttig, Lourdes Salamanca-Riba, P. C. Eklund
Publikováno v:
Journal of Materials Research. 7:411-417
The optical absorption and photoluminescence of Eu2+ : Sm3+-doped CaS films have been investigated in this paper. The energy dependence of the refractive index and absorption coefficient of the film were obtained by analyzing transmission and reflect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935bf3a5039f93df9b1e625e7a0f8dc4
https://doi.org/10.1557/jmr.1992.0411
https://doi.org/10.1557/jmr.1992.0411
Publikováno v:
International Neural Network Conference ISBN: 9780792308317
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::024f71eb8cfacc5b1e285379f249159d
https://doi.org/10.1007/978-94-009-0643-3_23
https://doi.org/10.1007/978-94-009-0643-3_23
Publikováno v:
Physica Status Solidi (a). 22:639-646
The effects of infra-red quenching, oxygen surface coverage, heat treatment, and additional intrinsic illumination on the spectral dependence of photoconductivity of Class I CdS crystals are presented. Profound changes in the near-band-edge photocond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40cfce74d515a125513ec3551f8dfb9c
https://doi.org/10.1002/pssa.2210220231
https://doi.org/10.1002/pssa.2210220231
Publikováno v:
1980 International Electron Devices Meeting.
Solar cells were fabricated on a section of large-grained cast polysilicon material, which had undergone a detailed structural analysis, in order to relate directly the electrical and structural characteristics of the grains and grain boundary region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93798dbe56121f1abc7ae34bee248dc0
https://doi.org/10.1109/iedm.1980.189793
https://doi.org/10.1109/iedm.1980.189793
Publikováno v:
MRS Proceedings. 5
An enhanced photoresponse at dislocation subgrain boundaries (in comparison with grain boundaries and dislocation-associated twin boundaries) is attributed to an increased junction depth at their positions relative to the value of the minority carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9778953ae3a8056092c3a93a5f2ee055
https://doi.org/10.1557/proc-5-179
https://doi.org/10.1557/proc-5-179