Zobrazeno 1 - 10
of 20
pro vyhledávání: '"G. M. Savchenko"'
Autor:
O. A. Paramonova, Ju. P. Savchenko, T. V. Gajvoronskaya, T. V. Gerbova, S. K. Shafranova, G. M. Savchenko, L. V. Prohorova
Publikováno v:
Сеченовский вестник, Vol 0, Iss 3, Pp 32-37 (2017)
The article presents the clinical and cytologic analysis of«Aquacel Ag + Hydrofiber dressing», “Aquacel Ag foam Hydrofiber dressing” and “Granuflex” (ConvaTec, USA) wound covering efficiency for complex treatment in patients with face an
Externí odkaz:
https://doaj.org/article/fd88052bad764b90bbd9906a9a333e55
Autor:
E. A. Kognovitskaya, G. M. Savchenko, A. V. Lyutetskii, D. V. Denisov, A. G. Gladyshev, S. N. Losev, Vladislav V. Dudelev, A. V. Babichev, L. Ya. Karachinsky, Grigorii S. Sokolovskii, I. I. Novikov, Sergey O. Slipchenko, Nikita A. Pikhtin, V. I. Kuchinskii, A. Yu. Egorov, D. A. Mikhailov
Publikováno v:
Quantum Electronics. 50:989-994
Quantum-cascade room-temperature 4.5 – 4.6 μm lasers with different numbers of quantum cascades are developed and studied. It is shown that losses at the metallised sidewalls of the ridge waveguide considerably increase the threshold current densi
Publikováno v:
2020 International Conference Laser Optics (ICLO).
Semiconductor photonic crystal waveguide structures are proposed that provide true phase matching during nonlinear light conversion. The material dispersion of the refractive index is taken into account as well as the waveguide dispersion.
Autor:
Pavel A. Yunin, G. M. Savchenko, Boris A. Andreev, V. Yu. Davydov, E. V. Demidov, E. V. Skorokhodov, D. N. Lobanov, P. A. Bushuykin, A. V. Novikov, L. V. Krasilnikova
Publikováno v:
Semiconductors. 51:1537-1541
The results of studies of the photoexcitation spectra of epitaxial InN layers formed by molecular-beam epitaxy with the plasma activation of nitrogen are reported. The concentration of free charge carriers in the layers is 1018–1019 cm–3. The pho
Autor:
S. N. Losev, G. M. Savchenko, A. G. Deryagin, V. I. Kuchinskii, N. S. Averkiev, V. V. Lundin, Vladislav V. Dudelev, E. A. Kognovitskaya, A. V. Sakharov, A. F. Tsatsul’nikov, Grigorii S. Sokolovskii
Publikováno v:
Physics of the Solid State. 59:1702-1705
The possibility of efficient second-harmonic generation in the optical range in a planar dielectric waveguide with the active region in the form of a one-dimensional photonic crystal has been theoretically shown. The true phase matching can be achiev
Publikováno v:
Journal of Physics: Conference Series. 1697:012068
We provide the exact solution of the dispersion equation for a waveguided semiconductor structure with a photonic crystal core that provides the efficient second harmonic generation in the visible range. The comparison of the results with an approxim
Autor:
G. M. Savchenko, G. S. Sokolovskii
Publikováno v:
Journal of Physics: Conference Series. 1697:012069
The waveguide structure of a semiconductor quantum-cascade laser is presented, which provides compensation of material dispersion of the refractive index. This structure can be used to generate radiation with a frequency of 1.4 THz due to nonlinear l
Autor:
K.K. Soboleva, E. A. Kognovitskaya, S. N. Losev, V. I. Kuchinskii, Vladislav V. Dudelev, V. V. Lundin, A. G. Deryagin, N. S. Averkiev, G. M. Savchenko, A. V. Sakharov, Grigorii S. Sokolovskii
Publikováno v:
Technical Physics Letters. 42:1041-1044
A theoretical study is carried out of the possibility of effective second-harmonic generation in a metamaterial representing a structure of alternating layers of semiconductor material with intrinsic and metallic conductivity that can be grown by epi
Autor:
V.E. Bugrov, Grigorii S. Sokolovskii, G. M. Savchenko, D.V. Chistiakov, K.K. Soboleva, N. S. Averkiev
Publikováno v:
2018 International Conference Laser Optics (ICLO).
We investigate the semiconductor metamaterial, the refractive index of which can be controlled in order to provide phase-matching for efficient difference-frequency generation in THz range. The proposed structure comprises alternating semiconductor l
Publikováno v:
Physics of the Solid State. 57:290-295
The probability of elastic scattering by impurities of exciton polaritons in thin GaAs samples has been calculated theoretically. It has been shown that thin samples of commercially pure GaAs satisfy the conditions for the existence of exciton polari