Zobrazeno 1 - 8
of 8
pro vyhledávání: '"G. M. O'Halloran"'
Autor:
G. M. O'Halloran, Y. Weber, P. Oberndorff, E. van Olst, R.T.H. Rongen, A. Mavinkurve, N. Owens, M. van Soestbergen, M. L. Farrugia
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
In this paper, a structured approach is shown for the selection of reliable package materials for microelectronic devices to be applied in high-temperature automotive applications. The principles of Physics-of-Failures are followed in which the appli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c9234a91c49aa606783fc69abad786a
https://doi.org/10.1109/ectc.2019.00079
https://doi.org/10.1109/ectc.2019.00079
Publikováno v:
Microelectronics Reliability. 54:1661-1665
This paper describes the use of in-situ High Temperature Storage Life (HTSL) tests based on a four point resistance method to evaluate Cu wire interconnect reliability. Although the same set up was used in the past to monitor Au–Al ball bond degrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8344313127fb87ef8e8bb4451f2106f5
https://doi.org/10.1016/j.microrel.2014.07.026
https://doi.org/10.1016/j.microrel.2014.07.026
Autor:
Johannes M. C. Mol, R.T.H. Rongen, J. Cerezo, A. Bruhn, A. Mavinkurve, Herman Terryn, Rajan Ambat, G. M. O'Halloran, O. Elisseeva
Publikováno v:
Corrosion Engineering, Science and Technology. 48:409-417
A gold–aluminium material combination is typically employed as an interconnection for microelectronic devices. One of the reliability risks of such devices is that of corrosion of aluminium bond pads resulting from the galvanic coupling between an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff90c17b972a4daa691e62f2c901dc00
https://doi.org/10.1179/1743278212y.0000000067
https://doi.org/10.1179/1743278212y.0000000067
Autor:
M. L. Farrugia, M. van Soestbergen, G. M. O'Halloran, R.T.H. Rongen, J. J. M. Zaal, A. Mavinkurve
Publikováno v:
2016 IEEE 66th Electronic Components and Technology Conference (ECTC).
In this work we present results, both experimental and theoretical, related to corrosion of intermetallic layers that are formed at the interface between the bond pad and the bond ball. Aluminum smear adjacent to the bond ball leads to an initial cre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82ed116c84691357d5daa2ce1f4b122c
https://doi.org/10.1109/ectc.2016.192
https://doi.org/10.1109/ectc.2016.192
Publikováno v:
2015 IEEE 65th Electronic Components and Technology Conference (ECTC).
To evaluate the dynamics of Cu-Al bond contact degradation, the evolution of the intermetallic electrical interface resistance was monitored in-situ in a test device exposed to high temperatures (140 to 200 °C) while conducting high current densitie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45e32affd2d73806256acebdb8978087
https://doi.org/10.1109/ectc.2015.7159780
https://doi.org/10.1109/ectc.2015.7159780
Publikováno v:
2014 IEEE 64th Electronic Components and Technology Conference (ECTC).
Large scale conversion of gold to copper wiring in microelectronics can only become successful when all the failure mechanisms that can be encountered during reliability testing, or during product application life are understood. One of these mechani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbae6b08ac691b5126805e56f8c150c0
https://doi.org/10.1109/ectc.2014.6897318
https://doi.org/10.1109/ectc.2014.6897318
Publikováno v:
Journal of Micromechanics and Microengineering. 8:317-322
A new electrolyte is presented for the electrochemical formation of porous silicon. The electrolyte, an ammonium fluoride etch mixture (AFEM), is used instead of hydrofluoric acid (HF) which is normally used for porous silicon (PS) formation. The mai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f89b65b042eb65c851fe423d324c644
https://doi.org/10.1088/0960-1317/8/4/009
https://doi.org/10.1088/0960-1317/8/4/009
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper presents a quick, reliable, and fully quantitative method of measuring the intermetallic coverage of copper to aluminium bonding at time zero and post reliability stressing. This method is currently used in select manufacturing quality con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::777b865a764d62ad2dc9d5e9cbcfe944
https://doi.org/10.31399/asm.cp.istfa2013p0297
https://doi.org/10.31399/asm.cp.istfa2013p0297