Zobrazeno 1 - 10
of 126
pro vyhledávání: '"G. M. Dunn"'
Autor:
A. Stephen, G. M. Dunn, J. Glover, C. H. Oxley, M. Montes Bajo, D. R. S. Cumming, A. Khalid, M. Kuball
Publikováno v:
AIP Advances, Vol 4, Iss 2, Pp 027105-027105-10 (2014)
A novel gallium arsenide (GaAs) based micro-cooler design, previously analysed both experimentally and by an analytical Heat Transfer (HT) model, has been simulated using a self-consistent Ensemble Monte Carlo (EMC) model for a more in depth analysis
Externí odkaz:
https://doaj.org/article/226645a9f1394b819f3bb4ae88687e9a
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1072-1075 (2020)
A novel planar design of Gunn diode with a shaped anode contact, utilizing Monte Carlo simulations, has been shown to have produced 0.3 THz frequency current output when operated in delayed mode. Two novel anode designs are investigated here, one wit
A novel gallium arsenide (GaAs) planar Gunn diode design with shaped anode and cathode contacts using Monte Carlo simulations has been shown to produce significantly higher frequency fine structure components in the output waveform than the natural t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::899885560cd534d322c5324a704ead50
https://eprints.gla.ac.uk/214640/1/214640.pdf
https://eprints.gla.ac.uk/214640/1/214640.pdf
Publikováno v:
Akura, M, Dunn, G & Missous, M 2020, Improvement on well design and operation of potential well barrier diodes . in 2019 42nd International Semiconductor Conference, CAS 2019-Proceedings ., 8923974, Proceedings of the International Semiconductor Conference, CAS, vol. 2019-October, IEEE, pp. 169-172, 42nd International Semiconductor Conference, Sinaia, Romania, 9/10/19 . https://doi.org/10.1109/SMICND.2019.8923974
The flexibility in design of the potential well in PWB diodes has shown promising prospects for zero-bias operation capability and improvements in the overall performance of the diode. We consider the right intrinsic region whilst regrading further t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::870628d8b46c9ba1e09222c853f1108a
https://doi.org/10.1109/SMICND.2019.8923974
https://doi.org/10.1109/SMICND.2019.8923974
Autor:
C. H. Oxley, G. M. Dunn, Dave Thomas, Ata Khalid, David R. S. Cumming, Steve Greedy, Mohamed Ismaeel Maricar
Publikováno v:
Microwave and Optical Technology Letters. 60:2144-2148
© 2018 Wiley Periodicals, Inc. The planar Gunn diode offers the potential of microwave, milli-metric and THz-based oscillators, which can be fabricated as part of a microwave monolithic integrated circuit (mmic). The paper develops an electrical rep
The effect of the edge of the channel on the operation of planar Gunn diodes has been examined using Monte Carlo simulations. High fields at the corner of the anode contact are known to cause impact ionization and consequent electroluminescence, but
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f80c807e5f91a6d2cb66994de2625d07
http://dspace.lib.cranfield.ac.uk/handle/1826/14895
http://dspace.lib.cranfield.ac.uk/handle/1826/14895
Publikováno v:
Akura, M, Dunn, G & Missous, M 2017, ' A Hybrid Planar-Doped Potential-Well Barrier Diode for Detector Applications ', IEEE Transactions on Electron Devices . https://doi.org/10.1109/TED.2017.2733724
This paper presents the principle of design and experimental demonstration of a prototype novel planar-doped potential-well barrier (PWB) diode concept that exploits the characteristics of both the PWB and planar-doped barrier (PDB) diodes. The highl
Autor:
David R. S. Cumming, Ata Khalid, C. H. Oxley, Martin Kuball, G M Dunn, James Glover, Miguel Montes Bajo
Publikováno v:
IEEE Electron Device Letters. 38:1325-1327
This letter describes the use of a novel micro-particle sensor ( ${\sim }3{\mu }\text{m}$ diameter) and infra-red microscopy to measure the temperature profile within the active channel (typically 3- ${\mu }\text{m}$ length and 120- ${\mu }\text{m}$
Publikováno v:
IEEE Electron Device Letters. 38:438-440
A GaAs-based potential well barrier (PWB) diode having a $n^{++}-i-n^{++}$ epitaxial structure has been successfully designed and demonstrated. The diode uses a GaAs potential well inserted between two intrinsic AlGaAs regions in which charges accumu
Publikováno v:
Journal of Semiconductors. 40:122101
A study has just been carried out on hot electron effects in GaAs/Al0.3Ga0.7As potential well barrier (PWB) diodes using both Monte Carlo (MC) and drift-diffusion (DD) models of charge transport. We show the operation and behaviour of the diode in te