Zobrazeno 1 - 10
of 153
pro vyhledávání: '"G. Lippold"'
Publikováno v:
Journal of Physics and Chemistry of Solids. 64:1641-1647
The surface of vaccum-cleaved and oxidized CuInSe 2 single crystals with different deviations from ideal stoichiometry and oxidized CuGaSe 2 thin films were exposed to low energy hydrogen ions (300 eV). Besides the removal of surface contaminations w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7284712f7625217ba6e3992839c94608
https://doi.org/10.1016/s0022-3697(03)00100-8
https://doi.org/10.1016/s0022-3697(03)00100-8
Autor:
S. Kim, S. Kincal, H. Neumann, Oscar D. Crisalle, S. P. Ahrenkiel, B. J. Stanbery, Chih-Hung Chang, Timothy J. Anderson, G. Lippold
Publikováno v:
Journal of Applied Physics. 91:3598-3604
Migration-enhanced epitaxy (MEE) has been successfully employed to grow epitaxial films of the ternary compound CuInSe2 on (001) GaAs that exhibit distinct coexisting domains of both a nonequilibrium crystallographic structure characterized by CuAu (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bff46113482f52843a747fd283abac9
https://doi.org/10.1063/1.1446234
https://doi.org/10.1063/1.1446234
Publikováno v:
Journal of Applied Physics. 91:1624-1627
Hydrogenation and oxygenation of CuInSe2 have been studied by x-ray photoelectron spectroscopy in order to investigate the defect properties. Initially oxidized p-type material was type-converted by low-energy hydrogen ion implantation. A defect mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53195674c51cc5dd762c1bb7bc84862b
https://doi.org/10.1063/1.1428096
https://doi.org/10.1063/1.1428096
Publikováno v:
Journal of Crystal Growth. 233:13-21
We report on sodium induced secondary phase segregations in CuGaSe 2 -thin films, grown by multi-source evaporation on soda-lime glass. The films are characterized by electron microscopy, micro-Raman, micro-photoluminescence and secondary ion mass sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eee934f4abff1b8b1a1c260370295d2
https://doi.org/10.1016/s0022-0248(01)01554-8
https://doi.org/10.1016/s0022-0248(01)01554-8
Publikováno v:
Applied Surface Science. 179:203-208
The surface of p-type CuInSe 2 single crystals prior to and after low energy hydrogen ion implantation at increased substrate temperature has been investigated by X-ray photoelectron spectroscopy (XPS) and Raman measurements. A shift of the Fermi-lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::558d4988e5780f24f4b1e220840de35a
https://doi.org/10.1016/s0169-4332(01)00280-x
https://doi.org/10.1016/s0169-4332(01)00280-x
Publikováno v:
Defect and Diffusion Forum. :127-146
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf7a29b08f275af4a8a6e1b755ffc849
https://doi.org/10.4028/www.scientific.net/ddf.183-185.127
https://doi.org/10.4028/www.scientific.net/ddf.183-185.127
Publikováno v:
Thin Solid Films. :498-503
The effect of low energy nitrogen and argon ion beam etching on the surface of CuInSe 2 single crystals and CuGaSe 2 thin films was investigated by (XPS) X-ray photoelectron spectroscopy and Raman measurements. After the removal of the oxidized and c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44952d76d57b8ca628c07b2b62e23b30
https://doi.org/10.1016/s0040-6090(99)00803-2
https://doi.org/10.1016/s0040-6090(99)00803-2
Publikováno v:
Thin Solid Films. :273-277
Solar cells based on CISCuT grown Cu-In-S absorber layers obtained efficiencies of about 6% in small areas. The CISCuT process for Cu-In-S absorber layer preparation starts from an metallurgical grade Cu tape. On this tape a thin In layer is electroc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1966fcdffb63e0a2146d68f4d55a6b8
https://doi.org/10.1016/s0040-6090(99)00818-4
https://doi.org/10.1016/s0040-6090(99)00818-4
Publikováno v:
Solar Energy Materials and Solar Cells. 59:217-231
Twenty keV Li + was implanted at room temperature into p- and n-conducting single crystalline CuInSe 2 at fluences of 3.2×10 15 and 3.2×10 16 cm −2 , respectively. The lithium depth profiles were measured using the neutron depth profiling techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc95424378568434329ca53e8ec58e9e
https://doi.org/10.1016/s0927-0248(99)00023-9
https://doi.org/10.1016/s0927-0248(99)00023-9