A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets

Autor: Christian Caillat, S. Biswas, G. Lecarval, B. Dal'zotto, G. Guegan, P. Mur, D. Souil, M.E. Nier, M. Heitzmann, François Martin, Simon Deleonibus, A.M. Papon, S. Tedesco

Publikováno v: IEEE Electron Device Letters. 21:173-175

We have demonstrated the feasibility of 20-nm gate length NMOSFET's using a two-step hard-mask etching technique. The gate oxide is 1.2-nm thick. We have achieved devices with real N/sup -/ arsenic implanted extensions and BF/sub 2/ pockets. The devi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6a0d02602d86def5f983df2baeed77a1
https://doi.org/10.1109/55.830972

Will strain be useful for 10 nm quasi-ballistic FDSOI devices? An experimental study

Autor: F. Rochette, Maud Vinet, Simon Deleonibus, G. LeCarval, P. Grosgeorges, Bernard Previtali, V. Barral, Daniela Munteanu, E. Bernard, Mikael Casse, L. Tosti, Thierry Poiroux, Sylvain Barraud, J.L. Autran, O. Faynot, Romain Ritzenthaler, Francois Andrieu

Publikováno v: 2007 Symposium on VLSI Technology, Digest of Technical Papers
2007 Symposium on VLSI Technology, Digest of Technical Papers, 2007, Kyoto, Japan. pp.128+, ⟨10.1109/VLSIT.2007.4339754⟩
ResearcherID

Symposium on VLSI Technology 2007, Kyoto, JAPAN, 2007; International audience; For the first time, we have extracted the ballisticity rates of strained and unstrained n-Fully Depleted Silicon On Insulator devices with gate lengths down to 10nm. Thank

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e195c6bc2148a808bbb6220086a6404c
https://hal.science/hal-01759441

TCAD Modeling and Data of NOR Nanocrystal Memories

Autor: S. Jacob, G. Lecarval, G. Festes, E. Jalaguier, P. Scheiblin, R. Coppard, Simon Deleonibus, B. De Salvo, L. Perniola, Fabien Boulanger

Publikováno v: 2006 7th Annual Non-Volatile Memory Technology Symposium.

This work presents TCAD simulations of NOR NC memories performed with commercial tools, which allow for a good understanding of the impact of the localized charge on both electrostatics and dynamics of the cell. The key role of the position of the tr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dfa23f69043561124276c0b2a3823040
https://doi.org/10.1109/nvmt.2006.378871

Explicit analytical charge-based model of asymmetrical double-gate MOSFET

Autor: Reyboz O. Rozeau T. Poiroux P. Martin G. Lecarval J. Jomaah, M.

Publikováno v: Explicit analytical charge-based model of asymmetrical double-gate MOSFET
EDSSC'05, IEEE Int. Conf. Elec. Dev. & Sol. State Cir.
EDSSC'05, IEEE Int. Conf. Elec. Dev. & Sol. State Cir., 2005, pp.XX

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::615f2748a87911f1c2ac1b372a06dfc9
https://hal.archives-ouvertes.fr/hal-00146513

Comparison of the sensitivity to heavy ions of SRAM's in different SIMOX technologies

Autor: J.L. Leray, O. Musseau, V. Ferlet-Cavrois, Y.M. Coic, E. Guichard, G. Lecarval

Publikováno v: IEEE Electron Device Letters. 15:82-84

We propose a simple model to evaluate the sensitivity to heavy ions of SRAM's in different CMOS/SIMOX technologies. The critical Linear Energy Transfer LETc and the asymptotic cross section /spl sigma/ characterize the sensitivity of a memory. Theore

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8d06d19e10be1cc8d91c5cccac4372f9
https://doi.org/10.1109/55.285395