Monte-Carlo simulation of MOSFETs with band offsets in the source and drain

Autor: Simon Deleonibus, Claudio Fiegna, Pierpaolo Palestri, Mireille Mouis, G. Le Carval, Maud Vinet, Enrico Sangiorgi, Marco Braccioli, Thierry Poiroux

Publikováno v: Solid-State Electronics. 52:506-513

Full-band Monte-Carlo simulations of short channel double-gate SOI nMOSFETs were used to assess possible enhancement of drain current in devices featuring a conduction band offset between the source and the channel as those obtained using non-convent

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::242f93ad58c9d336cfe373bc8d2a1a46
https://doi.org/10.1016/j.sse.2007.10.038

Comparative study of the fabricated and simulated Impact Ionization MOS (IMOS)

Autor: Claude Tabone, G. Le Carval, C. Le Royer, F. Mayer, Laurent Clavelier, Simon Deleonibus

Publikováno v: Solid-State Electronics. 51:579-584

Drift diffusion phenomena limits the subthreshold slope of conventional MOSFET to 60 mV/dec at room temperature. This paper deals with a new type of device, the Impact Ionization MOS (IMOS), which exhibits subthreshold slopes down to a few mV/dec. Th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::373026097ff36a0b37d957664fbce9f0
https://doi.org/10.1016/j.sse.2007.02.015

Pearson versus gaussian effective potentials for quantum-corrected Monte-Carlo simulation

Autor: G. Le Carval, Sylvain Barraud, Marie-Anne Jaud, Herve Jaouen, Philippe Dollfus

Publikováno v: Journal of Computational Electronics. 6:19-22

We propose a new effective potential for including quantization effects in nanometer scaled nMOSFET. It is calculated as the convolution of a Pearson IV distribution by the Poisson potential resulting from the 2D Poisson equation. Compared to the usu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ec424b657cb0adb3d1f9494c5ff898fb
https://doi.org/10.1007/s10825-006-0055-0

Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study

Autor: F. De Crecy, Philippe Dollfus, M-A. Jaud, Herve Jaouen, Sylvain Barraud, G. Le Carval

Publikováno v: Journal of Computational Electronics. 5:171-175

In the last years, different techniques have been proposed to include quantization effects in simulation of electron transport in nanoscale devices. The Effective Potential approach has been demonstrated as a possible correction method for describing

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6ed25f4329b23f4b88b62e19449a5a98
https://doi.org/10.1007/s10825-006-8839-9

Experimental and theoretical understanding of Forming, SET and RESET operations in Conductive Bridge RAM (CBRAM) for memory stack optimization

Autor: J. Guy, G. Molas, A. Roule, O. Cueto, S. Barraud, G. Le Carval, J. Cluzel, O. Pollet, Mathieu Bernard, Veronique Sousa, H. Grampeix, L. Perniola, B. De Salvo, Gerard Ghibaudo, Alain Toffoli, C. Carabasse, P. Blaise, Fabien Clermidy, Vincent Delaye, P. Brianceau, V. Balan

Publikováno v: 2015 IEDM Technical Digest
2014 IEEE International Electron Devices Meeting (IEDM)
2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. pp.6.5.1-6.5.4, ⟨10.1109/IEDM.2014.7046997⟩

International audience; In this paper, we deeply investigate for the 1st time at our knowledge the impact of the CBRAM memory stack on the Forming, SET and RESET operations. Kinetic Monte Carlo simulations, based on inputs from ab-initio calculations

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7e492bee3996ab39ffc78497f9df656
https://hal.univ-grenoble-alpes.fr/hal-02049407