Zobrazeno 1 - 10
of 284
pro vyhledávání: '"G. Lamedica"'
Autor:
Maria Dinescu, C. Grigoriu, G. Epurescu, I. Vrejoiu, G. Lamedica, Gheorghe Dinescu, Aldo Ferrari, M. Morar, D.G. Matei, Marco Balucani
Publikováno v:
Materials Science in Semiconductor Processing. 5:253-257
ZrO2 thin films have been prepared by laser ablation of Zr or ZrO2 targets in oxygen reactive atmosphere. The influence of the deposition parameters as oxygen pressure and target composition on the structure and morphology of the deposited layers has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2717dd14b04378d9579f42bf2fa1db2a
https://doi.org/10.1016/s1369-8001(02)00083-5
https://doi.org/10.1016/s1369-8001(02)00083-5
Autor:
A.P. Dementjev, G. Lamedica, Bogdana Mitu, Gheorghe Dinescu, Marco Balucani, Aldo Ferrari, Konstantin I. Maslakov, Maria Dinescu
Publikováno v:
Thin Solid Films. 383:230-234
Si/SiH/CN x and Si/SiC/CN x film structures have been obtained in a two step procedure: a-Si:H and a-SiC:H thin films have been deposited by PECVD from CH 4 /SiH 4 precursors; CN x films have been prepared by exposing the previous obtained samples to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::605dc9785bb57a9db66ece45895995ed
https://doi.org/10.1016/s0040-6090(00)01612-6
https://doi.org/10.1016/s0040-6090(00)01612-6
Autor:
V. Yakovtseva, L. Postnova, N. Vorozov, Vitaly Bondarenko, V. Ferrara, V. Levchenko, L. Dolgyi, Marco Balucani, Aldo Ferrari, G. Lamedica
Publikováno v:
physica status solidi (a). 182:195-199
In the present work, we report on the heteroepitaxial growth of PbS on porous silicon (PS). Epitaxial PbS films were grown by MBE on the surface of PS formed on the n+-type silicon (111) substrate. The films were comparable with films grown on BaF2 s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f22750a978862918a22978e6995607e
https://doi.org/10.1002/1521-396x(200011)182:1<195::aid-pssa195>3.0.co
https://doi.org/10.1002/1521-396x(200011)182:1<195::aid-pssa195>3.0.co
Autor:
G. Lamedica, A. Ricciardelli, E. Viarengo, L. Dolgyi, Vitaly Bondarenko, N. Vorozov, Aldo Ferrari, Marco Balucani
Publikováno v:
Materials Science in Semiconductor Processing. 3:351-355
The greatest limit in high-speed communications between different circuit blocks is due to the delays introduced by metal interconnections. Knock-down wire communication bottleneck is, therefore, one of the best goals that current research could reac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a716dc069bd0704333f6d489fea0067d
https://doi.org/10.1016/s1369-8001(00)00055-x
https://doi.org/10.1016/s1369-8001(00)00055-x
Autor:
L. Dolgyi, V. Yakovtseva, Vitaly Bondarenko, G. Lamedica, L. Franchina, N. Vorozov, N. Kazuchits, Marco Balucani, Aldo Ferrari
Publikováno v:
Journal of Porous Materials. 7:215-222
A brief review of 20-years research of formation, processing and utilizing of oxidized porous silicon (OPS) is presented. Electrolytes to form porous silicon (PS) layers, special features of PS chemical cleaning and thermal oxidation are discussed. O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4bf515033324e3e7b867c3e3fdc5f82
https://doi.org/10.1023/a:1009647007232
https://doi.org/10.1023/a:1009647007232
Autor:
G. Lamedica, L. Dolgyi, Aldo Ferrari, Marco Balucani, V. Yakovtseva, Vitaly Bondarenko, L. Franchina
Publikováno v:
Journal of Porous Materials. 7:23-26
The properties of porous silicon (PS) are closely connected to its morphology, much investigation has been done in order to correlate the morphological characteristics of PS with the anodisation parameters. In this paper the results of morphological
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9db639683b6563c971e99a7a19f60606
https://doi.org/10.1023/a:1009627412800
https://doi.org/10.1023/a:1009627412800
Autor:
Aldo Ferrari, L. Dolgyi, N. Vorozov, V. Petrovich, Vitaly Bondarenko, V. Yakovtseva, N. Kazuchits, G. Lamedica, S. Volchek, Marco Balucani
Publikováno v:
Scopus-Elsevier
The present work reports Er-doped channel oxidized porous silicon waveguides (OPSWG) formed from n + -type Si by the two-step anodisation process. Er has been introduced into porous silicon before oxidation by a cathodic treatment in 0.1 M Er (NO 3 )
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c04ee9532d6f73bfffeddaef34e16f7d
https://doi.org/10.1016/s0040-6090(01)01155-5
https://doi.org/10.1016/s0040-6090(01)01155-5
Autor:
N. Kazuchits, V. Petrovich, G. Lamedica, L. Dolgyi, V. Yakovtseva, S. Volchek, Marco Balucani, Vitaly Bondarenko, Peter I. Gaiduk, Aldo Ferrari
We report 77 K Photoluminescence (PL) and Photoluminescence Excitation (PLE) spectroscopies of Er ions incorporated with Fe in oxidized porous silicon (OPS) in the form of 5-50 nm sized clusters containing Fe, O, and Er. Twenty sharp (FWHM of about 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f900966bb8f0b76d23c9888e8e28f059
http://hdl.handle.net/11573/248616
http://hdl.handle.net/11573/248616
X-ray double-crystal diffractometry was used to measure lattice deformation of porous silicon (PS) and Si epitaxial layers grown on PS. PS layers 1–10 μm in thickness and 15-65% in porosity were formed by anodization of n + -type Sb doped Si wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3acce5db4f8f81cb5519c3d8fc24ccaf
http://hdl.handle.net/11573/102515
http://hdl.handle.net/11573/102515
Autor:
G. Lamedica, L. Dolgyi, V. Yakovtseva, Aldo Ferrari, S. Volchek, Marco Balucani, Vitaly Bondarenko, N. Vorozov
Publikováno v:
Progress in SOI Structures and Devices Operating at Extreme Conditions ISBN: 9781402005763
This paper discusses new potentialities of oxidized porous silicon (PS) based SOI structures that have hitherto escaped attention of the researchers. Oxidized PS (OPS) has the property of controlling its characteristics depending on regimes of format
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b75efae3fa5548c1642ffd2f2efb509
https://doi.org/10.1007/978-94-010-0339-1_24
https://doi.org/10.1007/978-94-010-0339-1_24