Zobrazeno 1 - 9
of 9
pro vyhledávání: '"G. L. McCoy"'
Publikováno v:
Journal of Physics: Condensed Matter. 9:10795-10799
The photoluminescent spectra from high-quality GaAs crystals grown from the vapour phase reveal a dominant Zn acceptor and a C acceptor, as well as an acceptor that would appear to have a smaller binding energy than C. We show that this shallowest ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81975a1be7fccdbd6ac43247b7a17d05
https://doi.org/10.1088/0953-8984/9/48/021
https://doi.org/10.1088/0953-8984/9/48/021
Publikováno v:
Physical Review B. 51:2572-2575
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb1c478871eba5d8329ed141f64520b0
https://doi.org/10.1103/physrevb.51.2572
https://doi.org/10.1103/physrevb.51.2572
Publikováno v:
Solid State Communications. 97:59-61
Four emission lines have been observed in high purity GaAs, which are associated with excitons bound to a shallow neutral donor. The lowest energy line is the ground state; the three higher energy lines are due to excited states of the neutral donor-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6b0a9eb11a490d17e4fe1ec54460bf3
https://doi.org/10.1016/0038-1098(95)00513-7
https://doi.org/10.1016/0038-1098(95)00513-7
Autor:
B. Cassidy, D. G. L. McCoy
Publikováno v:
Anaesthesia. 55:823-823
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b53d722b3d342491c1d1c341949ee64
https://doi.org/10.1046/j.1365-2044.2000.01629-26.x
https://doi.org/10.1046/j.1365-2044.2000.01629-26.x
Publikováno v:
Journal of Applied Physics. 51:4842-4846
A sharp line transition at 1.51385 eV has been observed in the photoluminescence spectra of an epitaxially grown crystal of GaAs. A Si3N4 cap was applied by plasma deposition and the crystal was then annealed at 850 °C for 15 min. The sharp emission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d536a1c5d035152df4a7b96cb62ee84
https://doi.org/10.1063/1.328318
https://doi.org/10.1063/1.328318
Publikováno v:
Solid State Communications. 46:473-476
A self-reversal model is presented to explain the luminescence dependence of the donor bound exciton intensity. The line broadening mechanism is attributed to rotational interaction with non-rigid rotator states. Line reversal results from absorption
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9eb5c273624cd6a358d48d9c28699fb
https://doi.org/10.1016/0038-1098(83)90580-x
https://doi.org/10.1016/0038-1098(83)90580-x
Publikováno v:
Solid State Communications. 31:365-368
The first observation of six sharp photoluminescence lines with energies less than the energies of the lines associated with a radiative recombination of a single exciton bound to a neutral acceptor in high purity epilayers of GaAs at liquid helium t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5a0eaec723758aebc7c85053f9bea9
https://doi.org/10.1016/0038-1098(79)90557-x
https://doi.org/10.1016/0038-1098(79)90557-x
Publikováno v:
Solid State Communications. 38:1053-1056
We report the first observation of three different residual donors in undoped high purity vapor phase epitaxial GaAs using the high resolution photoluminescence spectroscopy technique at temperatures ∼ 2 K. The binding energies of these shallow don
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8289fae9c52fbe8f7c34a0f7e4b21869
https://doi.org/10.1016/0038-1098(81)90016-8
https://doi.org/10.1016/0038-1098(81)90016-8
Publikováno v:
Journal of Applied Physics. 49:5336-5338
A sharp emission line at 1.51165 eV has been observed in the photoluminescent spectra of certain high‐quality GaAs crystals. From the analyses of crystals containing residual strain, it is concluded that the transition results from a bound‐to‐b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41e262663e217001db4163d877490df0
https://doi.org/10.1063/1.324404
https://doi.org/10.1063/1.324404