Zobrazeno 1 - 10
of 169
pro vyhledávání: '"G. L. McCoy"'
Publikováno v:
Journal of Physics: Condensed Matter. 9:10795-10799
The photoluminescent spectra from high-quality GaAs crystals grown from the vapour phase reveal a dominant Zn acceptor and a C acceptor, as well as an acceptor that would appear to have a smaller binding energy than C. We show that this shallowest ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81975a1be7fccdbd6ac43247b7a17d05
https://doi.org/10.1088/0953-8984/9/48/021
https://doi.org/10.1088/0953-8984/9/48/021
Publikováno v:
Physical Review B. 51:2572-2575
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb1c478871eba5d8329ed141f64520b0
https://doi.org/10.1103/physrevb.51.2572
https://doi.org/10.1103/physrevb.51.2572
Publikováno v:
Solid State Communications. 97:59-61
Four emission lines have been observed in high purity GaAs, which are associated with excitons bound to a shallow neutral donor. The lowest energy line is the ground state; the three higher energy lines are due to excited states of the neutral donor-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6b0a9eb11a490d17e4fe1ec54460bf3
https://doi.org/10.1016/0038-1098(95)00513-7
https://doi.org/10.1016/0038-1098(95)00513-7
Autor:
Maherndl, Nina1 (AUTHOR) nina.maherndl@uni-leipzig.de, Moser, Manuel2,3 (AUTHOR), Lucke, Johannes2,4 (AUTHOR), Mech, Mario5 (AUTHOR), Risse, Nils5 (AUTHOR), Schirmacher, Imke5 (AUTHOR), Maahn, Maximilian1 (AUTHOR)
Publikováno v:
Atmospheric Measurement Techniques. 2024, Vol. 17 Issue 5, p1475-1495. 21p.
Autor:
B. Cassidy, D. G. L. McCoy
Publikováno v:
Anaesthesia. 55:823-823
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b53d722b3d342491c1d1c341949ee64
https://doi.org/10.1046/j.1365-2044.2000.01629-26.x
https://doi.org/10.1046/j.1365-2044.2000.01629-26.x
Autor:
Chazette, Patrick1 (AUTHOR) patrick.chazette@lsce.ipsl.fr, Raut, Jean-Christophe2 (AUTHOR)
Publikováno v:
Atmospheric Measurement Techniques. 2023, Vol. 16 Issue 23, p5847-5861. 15p.
Publikováno v:
Journal of Applied Physics. 51:4842-4846
A sharp line transition at 1.51385 eV has been observed in the photoluminescence spectra of an epitaxially grown crystal of GaAs. A Si3N4 cap was applied by plasma deposition and the crystal was then annealed at 850 °C for 15 min. The sharp emission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d536a1c5d035152df4a7b96cb62ee84
https://doi.org/10.1063/1.328318
https://doi.org/10.1063/1.328318
Publikováno v:
Solid State Communications. 46:473-476
A self-reversal model is presented to explain the luminescence dependence of the donor bound exciton intensity. The line broadening mechanism is attributed to rotational interaction with non-rigid rotator states. Line reversal results from absorption
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9eb5c273624cd6a358d48d9c28699fb
https://doi.org/10.1016/0038-1098(83)90580-x
https://doi.org/10.1016/0038-1098(83)90580-x
Publikováno v:
Solid State Communications. 31:365-368
The first observation of six sharp photoluminescence lines with energies less than the energies of the lines associated with a radiative recombination of a single exciton bound to a neutral acceptor in high purity epilayers of GaAs at liquid helium t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5a0eaec723758aebc7c85053f9bea9
https://doi.org/10.1016/0038-1098(79)90557-x
https://doi.org/10.1016/0038-1098(79)90557-x