Zobrazeno 1 - 10
of 22
pro vyhledávání: '"G. L. Donadio"'
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:045003
3-D NAND Flash has become the workhorse for non-volatile memory based storage. It is evermore important to develop solutions that keep NAND scaling in a sustainable path with respect to cost and performance. The memory cells in 3-D NAND are addressed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d88c194d64d349c42ce1499270555c
https://doi.org/10.1149/2162-8777/accb66
https://doi.org/10.1149/2162-8777/accb66
Autor:
S. Rachidi, A. Arreghini, D. Verreck, G. L. Donadio, K. Banerjee, K. Katcko, Y. Oniki, G. Van den bosch, M. Rosmeulen
Publikováno v:
2022 IEEE International Memory Workshop (IMW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87d20af3b34e8525aa039e2b7299463b
https://doi.org/10.1109/imw52921.2022.9779303
https://doi.org/10.1109/imw52921.2022.9779303
Autor:
Xavier Rottenberg, Anabel De Proft, Kristof Lodewijks, G. L. Donadio, Daniele Garbin, Romain Delhougne, Ludovic Goux, Gouri Sankar Kar, H. Hody, Thomas Witters
Publikováno v:
IEEE Transactions on Electron Devices. 67:4228-4233
The use of carbon-based (C-based) liners is investigated for RESET current reduction in self-heating, pillar-shaped phase-change memory (PCM) cells for storage class memory (SCM) technologies. The liner is inserted between the top electrode and the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9c8080b107bbfe31645b9cea1b383b6
https://doi.org/10.1109/ted.2020.3016625
https://doi.org/10.1109/ted.2020.3016625
Autor:
Zsolt Tokei, Harold Dekkers, Michiel van Setten, Nouredine Rassoul, Attilio Belmonte, Soeren Steudel, Luka Kljucar, Manoj Nag, Jose Ignacio del Agua Borniquel, Adrian Chasin, G. L. Donadio, Gouri Sankar Kar, Jerome Mitard, Geoffrey Pourtois, Romain Delhougne, Christopher J. Wilson, Ludovic Goux
Publikováno v:
ECS Transactions. 98:205-217
In this work, IGZO device integration is reported leveraging our 300mm-fab facilities. Our objective is mainly to gain insights into the process and material elements which drive the control of the performance parameters of IGZO nFETs. To control the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::add78b137b7ea9711a3f2a0d8990b6a8
https://doi.org/10.1149/09807.0205ecst
https://doi.org/10.1149/09807.0205ecst
Autor:
Lieve Teugels, Attilio Belmonte, H. Oh, Ludovic Goux, Ming Mao, Harinarayanan Puliyalil, Zsolt Tokei, Luka Kljucar, G. L. Donadio, Jerome Mitard, Diana Tsvetanova, Nouredine Rassoul, Harold Dekkers, K. Banerjee, Gouri Sankar Kar, Adrian Chasin, Romain Delhougne, M. J. van Setten, M. Pak, Subhali Subhechha, Laurent Souriau
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We report for the first time a fully 300-mm stacking-compatible capacitor-less DRAM cell with >400s retention time by integrating two IGZO-TFTs in a 2T0C configuration. We optimize the single IGZO-TFT performances by engineering the materials surroun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4834d58f9313875f9c2a12210fa65ee3
https://doi.org/10.1109/iedm13553.2020.9371900
https://doi.org/10.1109/iedm13553.2020.9371900
Autor:
W. G. Kim, Daniele Garbin, D. Cellier, Robin Degraeve, Sergiu Clima, S. Kabuyanagi, Mahendra Pakala, A. Cockburn, G. L. Donadio, Andrea Fantini, Wouter Devulder, Gouri Sankar Kar, M. Suzuki, Ludovic Goux, Romain Delhougne
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
Switching mechanism and its controllability in Ovonic Threshold Switching (OTS) devices are systematically investigated by using Si-Ge-As-Se quaternary system known as promising OTS materials. We newly demonstrate that selector device performance is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cdcb8bfe4858a488ad7b70590df0dee
https://doi.org/10.1109/vlsitechnology18217.2020.9265011
https://doi.org/10.1109/vlsitechnology18217.2020.9265011
Autor:
Wouter Devulder, Romain Delhougne, W. G. Kim, Andrea Fantini, Gouri Sankar Kar, Sergiu Clima, Christophe Detavernier, A. Cockburn, Mahendra Pakala, Robin Degraeve, Ludovic Goux, Karl Opsomer, G. L. Donadio, D. Cellier, Daniele Garbin
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this work we explore the composition space of the Ovonic Threshold Switch (OTS) selector device based on Si-Ge-As-Te material system. Physical Vapor Deposition (PVD) co-sputtering capabilities enabled the tuning of the As/Te ratio, Ge and Si conte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::310b449b2b421dd6dc7c2ce077a73ade
https://doi.org/10.1109/iedm19573.2019.8993547
https://doi.org/10.1109/iedm19573.2019.8993547
Autor:
Wouter Devulder, Gouri Sankar Kar, Thomas Witters, J. Radhakrishnan, Attilio Belmonte, Augusto Redolfi, Guy Vereecke, Laura Nyns, P. Kumbhare, Ludovic Goux, A. Covello, Alexis Franquet, G. L. Donadio, Valentina Spampinato, M. Mao, Romain Delhougne, H. Hody, Shreya Kundu
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this abstract, we report for the first time the low-current performance enhancement combined with the improvement of the scaling potential in CBRAM devices by adopting an etch-friendly alternative material, Co, as active electrode, based on theore
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b5320d0020c3fe494bd88dbc76dea29
https://doi.org/10.1109/iedm19573.2019.8993527
https://doi.org/10.1109/iedm19573.2019.8993527
Autor:
Diana Tsvetanova, G. L. Donadio, T. Lin, Sebastien Couet, D. Crotti, Siddharth Rao, Yoann Tomczak, Laurent Souriau, Gouri Sankar Kar, Kiroubanand Sankaran, Johan Swerts, Simon Van Beek, Ludovic Goux, Woojin Kim, Arnaud Furnemont
Publikováno v:
IEEE Transactions on Magnetics. 52:1-4
Low write error rate (WER) is an important requirement for spin-transfer torque magnetic random access memory to be developed as a product. However, there have been reports about back-hopping phenomena that disturb achieving low WER. We demonstrate t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a11c447fbabe4e5957767d756642910
https://doi.org/10.1109/tmag.2016.2536158
https://doi.org/10.1109/tmag.2016.2536158
Autor:
Attilio Belmonte, Wouter Devulder, Romain Delhougne, Guy Vereecke, Laura Nyns, Gouri Sankar Kar, Michel Houssa, Ludovic Goux, G. L. Donadio, P. Kumbhare, J. Radhakrishnan
Publikováno v:
Applied Physics Letters. 117:151902
Co/LaSiO conducting bridge random access memory is a promising candidate for low power storage class memories due to its high endurance and short switching pulse width. Moisture has been hypothesized to be an important parameter in determining device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9a89a3fcb6e260e649c3207978f2a06
https://doi.org/10.1063/5.0021250
https://doi.org/10.1063/5.0021250