Výsledky vyhledávání - "G. L. Destefanis"

Autor: G L Destefanis

Publikováno v: Semiconductor Science and Technology. 6:C88-C92

This paper gives a description of the infrared photovoltaic detector technology developed by LETI and now industrialized by SOFRADIR. Results obtained on several kinds of arrays both in the 3-5 mu m and 8-12 mu m wavelength ranges are presented. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::687e171d7840e3cdf8f98f6b5bd341b5
https://doi.org/10.1088/0268-1242/6/12c/017

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Light emission from the surface of LiNbO3

Autor: P.D. Townsend, G. L. Destefanis, K. A. Mirza

Publikováno v: Physica Status Solidi (a). 47:K63-K66

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d154d1e75d0485acb9c4a831794b158
https://doi.org/10.1002/pssa.2210470157

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Indium ion implantation in Hg0.78Cd0.22Te/CdTe

Autor: G. L. Destefanis

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:171-175

Indium ion implantation in p‐type Hg0.78Cd0.22Te/CdTe epilayers has been investigated by secondary ion mass spectroscopy (SIMS) and 77 K Hall effect measurements. In this paper we show that indium diffusion strongly depends on the way annealing is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6a97b896e9a3700fd6fcf5f68bb2098d
https://doi.org/10.1116/1.573193

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Evidence of anomalous behavior in low‐n‐type mercury cadmium telluride induced by extended defects

Autor: B. Pelliciari, G. L. Destefanis, L. Di Cioccio

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 7:314-320

Suitable improvements of our liquid phase epitaxy (LPE) growth process enable us to obtain excellent quality p‐type as‐grown mercury cadmium telluride (MCT) epilayers, well adapted to high‐performance photovoltaic (PV) detector technology. Alth

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::996b83d64ddaf030de374d6924204b9e
https://doi.org/10.1116/1.576131

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The formation of waveguides and modulators in LiNbO3by ion implantation

Autor: A. Perez, G. L. Destefanis, P.D. Townsend, J. P. Gailliard, B. W. Farmery, E. L. Ligeon, S. Valette

Publikováno v: Journal of Applied Physics. 50:7898-7905

Ion implantation is an attractive method for writing optical circuits for use in integrated optics. In LiNbO3 it is shown that there are large changes produced in both refractive indices n0 and ne by the energy deposited in nuclear collisions between

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e6a966d395f36a4ee807d54ef29473be
https://doi.org/10.1063/1.325982

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Very efficient void formation in ion implanted InSb

Autor: G. L. Destefanis, J. P. Gailliard

Publikováno v: Applied Physics Letters. 36:40-42

Ion implantation in InSb forms a surface layer which looks like a sponge. We show that this structure is related to an elevation of the surface by as much as 2 μm.In this perturbated layer, large voids typically 50 A in diameter were observed by TEM

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::21510e6ac643e667ab10faa2fc759704
https://doi.org/10.1063/1.91308

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32×32 planar IR photovoltaic mosaic arrays on sputtered CdxHg1−xTe epilayers

Autor: R. Roussille, G. L. Destefanis, R. Boch, D. Amingual, J. L. Tissot

Publikováno v: Applied Physics Letters. 44:679-681

Epitaxial n‐type CdxHg1−xTe layers on (111) CdTe substrates have been grown between 250 and 300 °C by sputtering deposition. The standard growth rate was nominally 2 μm/h for a thickness range from 10 to 30 μm. Typical electron concentration i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3dd3d1b6a12e5cc3ff147b5239817663
https://doi.org/10.1063/1.94875

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Light Emission from the Surface of LiNbO3

Autor: K. A. Mirza, P. D. Townsend, G. L. Destefanis

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ff69d52b4abe2a47ac09e74c6c3822d6
https://doi.org/10.1515/9783112494684-059

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Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

Autor: J P Chamonal, G L Destefanis, L Dicioccio, B Pelliciari

Publikováno v: SPIE Proceedings.

The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d505e49913d3f8a81db1f20897e7f999
https://doi.org/10.1117/12.943540

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Electrical And Physical Properties Of High Quality Liquid Phase Epitaxy Of Hg 0.78 Cd 0.22 Te On CdZnTe

Autor: G L. Destefanis, D Amingual, D Zenatti, S Paltrier, S Guillot, J L. Ouvrier-Buffet

Publikováno v: SPIE Proceedings.

Some physical and electrical properties of liquid phase epitaxial (LPE) layers of Hg0.78Cd0.22Te grown on CdZnTe substrates are presented in this paper. In order to qualify these epilayers, 64 x 64 arrays of backside illuminated photovoltaic detector

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eaa09c614d4593183ef309f96a6887e0
https://doi.org/10.1117/12.938543

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