Zobrazeno 1 - 10
of 81
pro vyhledávání: '"G. Knoblinger"'
Publikováno v:
Advances in Radio Science, Vol 5, Pp 285-290 (2007)
Multi-gate FET, e.g. FinFET devices are the most promising contenders to replace bulk FETs in sub-45 nm CMOS technologies due to their improved sub threshold and short channel behavior, associated with low leakage currents. The introduction of novel
Externí odkaz:
https://doaj.org/article/0abe464c3eca49c29ebaeb6b43e1144c
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 2:1280-1292
We investigate high-quality (high-Q) inductors implemented in the redistribution layer (RDL) of the fan-in and fan-out area of an embedded wafer-level ball grid array (eWLB) package. The eWLB is an innovative package technology introduced recently fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d104f44b52d89ed70cd447aa928d372
https://doi.org/10.1109/tcpmt.2012.2186963
https://doi.org/10.1109/tcpmt.2012.2186963
Autor:
G. Knoblinger, Pierpaolo Palestri, A. Roithmeier, Michael Fulde, F. Cernoia, Davide Ponton, M. Tiebout
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 58:467-471
In this brief, a conventional LC voltage-controlled oscillator (LC-VCO) for Global System for Mobile Communications 900 applications is implemented in a 32-nm CMOS technology. The transition to 32-nm technology represents a big step from the technolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::634095b2f1c2d642a4e590ff8df2fca3
https://doi.org/10.1109/tcsii.2011.2160033
https://doi.org/10.1109/tcsii.2011.2160033
Autor:
G. Knoblinger, Jean-Pierre Colinge, K. Schrufer, P. Patruno, C.R. Cleavelin, J. Rudee, T. Schulz, Weize Xiong, A. Orozco
Publikováno v:
IEEE Transactions on Nuclear Science. 53:3237-3241
N-channel trigate SOI MOSFETs have been irradiated with 60 Co gamma rays at doses up to 6 Mrad(SiO2). The threshold voltage shift at 6 Mrad is less than 10 mV in transistors with a gate length of 0.3 mum. At 6 Mrad(SiO2), the current drive reduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd8837e80f86add448603785018b3ab7
https://doi.org/10.1109/tns.2006.885841
https://doi.org/10.1109/tns.2006.885841
Publikováno v:
IEEE Journal of Solid-State Circuits. 36:831-837
In this paper, we present a simple analytical model for the thermal channel noise of deep-submicron MOS transistors including hot carrier effects. The model is verified by measurements and implemented in the standard BSIM3v3 SPICE model. We show that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c4b9234f9a86fcae26debc971e7c8ad
https://doi.org/10.1109/4.918922
https://doi.org/10.1109/4.918922
Autor:
Klaus Schruefer, John Alderman, Gareth Redmond, Aidan J. Quinn, Jean-Pierre Colinge, Liam Floyd, Weize Xiong, C.R. Cleavelin, T. Schulz, G. Knoblinger, P. Patruno
Publikováno v:
IEEE Electron Device Letters. 27:172-174
Trigate silicon-on-insulator (SOI) MOSFETs have been measured in the 5-400 K temperature range. The device fin width and height is 45 and 82 nm, respectively, and the p-type doping concentration in the channel is 6/spl times/10/sup 17/ cm/sup -3/. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28b5d668e31f7c5058c6d2e58ad58b72
https://doi.org/10.1109/led.2006.869941
https://doi.org/10.1109/led.2006.869941
Autor:
Liam Floyd, C.R. Cleavelin, Gareth Redmond, P. Patruno, T. Schulz, John Alderman, G. Knoblinger, Jean-Pierre Colinge, Weize Xiong, Aidan J. Quinn, Klaus Schruefer
Publikováno v:
IEEE Electron Device Letters. 27:120-122
Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the I/sub D/(V/sub G/) characteristics. These oscillations correspond to the filling of energy subbands by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90117a5e6c022f64ba7b779357475885
https://doi.org/10.1109/led.2005.862691
https://doi.org/10.1109/led.2005.862691
Publikováno v:
2011 IEEE MTT-S International Microwave Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93a81aa4304e59097d3706abaf1f2390
https://doi.org/10.1109/mwsym.2011.5973114
https://doi.org/10.1109/mwsym.2011.5973114
Publikováno v:
2011 IEEE MTT-S International Microwave Symposium.
We present a 5.9-to-7.8 GHz voltage-controlled oscillator (VCO) fabricated in a 65 nm CMOS technology and assembled in a chip-scale embedded Wafer Level Ball-Grid-Array (eWLB) package. The VCO uses a high-quality LC-tank inductor, realized in the fan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9b64d7247f555fdcf41c76fe7146b2e
https://doi.org/10.1109/mwsym.2011.5972817
https://doi.org/10.1109/mwsym.2011.5972817
Publikováno v:
2011 IEEE 61st Electronic Components and Technology Conference (ECTC).
We investigate high-quality (high-Q) inductors realized in the fan-in area and in the fan-out area of the embedded wafer level ball grid array (eWLB) package. We show that the inductors realized in the fan-out area have negligible substrate losses an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa0ec3f5d98124fd6b425aeeab10fea8
https://doi.org/10.1109/ectc.2011.5898689
https://doi.org/10.1109/ectc.2011.5898689