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pro vyhledávání: '"G. Kissinger"'
Akademický článek
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Publikováno v:
ECS Journal of Solid State Science and Technology. 8:N125-N133
PECVD nitride layers with different layer stress ranging from about 315 MPa to ���1735 MPa were deposited on silicon wafers with similar concentration of interstitial oxygen. After a thermal treatment consisting of nucleation at 650��C for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63c027126365a5ab5975e52c3917a678
https://doi.org/10.1149/2.0061909jss
https://doi.org/10.1149/2.0061909jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:N79-N84
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::294a760861ddc54692b875f24047d66d
https://doi.org/10.1149/2.0141904jss
https://doi.org/10.1149/2.0141904jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:N17-N24
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa4a220c4fa0eed97f0af314178ad641
https://doi.org/10.1149/2.0081704jss
https://doi.org/10.1149/2.0081704jss
Autor:
G. Kissinger
Publikováno v:
Handbook of Photovoltaic Silicon ISBN: 9783662527351
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cdafae9c580932e2b796a9b341c0d30
https://doi.org/10.1007/978-3-662-52735-1_20-1
https://doi.org/10.1007/978-3-662-52735-1_20-1
Publikováno v:
Environmental Research Letters, Vol 9, Iss 7, p 074004 (2014)
Countries participating in the REDD+ scheme are in the readiness phase, designing policy interventions to address drivers of deforestation and forest degradation (DD). In order for REDD+ interventions to be effective, it is essential that they take i
Externí odkaz:
https://doaj.org/article/91caacdc7c3a4288a52d3042d1f1419a
Publikováno v:
Superlattices and Microstructures. 99:231-235
In this work, we used EDX, EELS and FTIR spectroscopy to investigate the stoichiometry of oxygen precipitates in Czochralski silicon wafers. The EDX analysis of a plate-like precipitate demonstrated that the composition of the precipitate is SiO1.93.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::787e5d45bea72f52953e471a70e056a9
https://doi.org/10.1016/j.spmi.2016.02.004
https://doi.org/10.1016/j.spmi.2016.02.004
Autor:
M. Klingsporn, Markus Andreas Schubert, Dawid Kot, G. Kissinger, Timo Müller, Andreas Sattler
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:N124-N129
One of the reasons why the principal gettering mechanism of copper at oxide precipitates is not yet clarified is that it was not possible to identify the presence and measure the copper concentration in the vicinity of oxide precipitates. To overcome
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddf860fa8f19358636462d5f1739a489
https://doi.org/10.1149/2.0151509jss
https://doi.org/10.1149/2.0151509jss
Akademický článek
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Publikováno v:
Defect Recognition and Image Processing in Semiconductors 1997
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2a79965de50864beffc2da513569055
https://doi.org/10.1201/9781315140810-57
https://doi.org/10.1201/9781315140810-57