Zobrazeno 1 - 10
of 54
pro vyhledávání: '"G. Kerrien"'
Autor:
G. Kerrien, Emek Yesilada, Sebastien Cremer, Vincent Farys, B. Orlando, N. Zeggaoui, Vlad Liubich, Alexander Tritchkov
Publikováno v:
SPIE Proceedings.
Si-Photonics is the technology in which data is transferred by photons (i. e. light). On a Photonic Integrated Circuit (PIC), light is processed and routed on a chip by means of optical waveguides. The Si-Photonics waveguides functionality is determi
Autor:
Emek Yesilada, G. Kerrien, Catherine Martinelli, Florent Vautrin, Laurent Le Cam, Christophe Couderc, Jerome Belledent, Frank Sundermann, Patrick Schiavone, Franck Foussadier, Yorick Trouiller, Jonathan Planchot, Jean-Christophe Urbani, Patrick Montgomery, Mazen Saied, Frederic Robert, Amandine Borjon, Bill Willkinson, Yves Rody, Christian Gardin
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, Elsevier, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
International audience; Assist features (AF) are an essential component of reticle enhancement techniques. Their use is indispensable in sub-100 nm technologies to ensure a maximum process window (PW) across chip, especially for critical levels. Inde
Autor:
Dominique Débarre, G. Kerrien, Jacques Boulmer, Kuniyuki Kakushima, C. Laviron, M. Hernandez, Thierry Sarnet, Alain Bosseboeuf, Nourdin Yaakoubi, Elisabeth Dufour-Gergam, Tarik Bourouina, J. Venturini
Publikováno v:
Applied Surface Science. 247:537-544
The future CMOS generations for microelectronics will require advanced doping techniques capable to realize ultra-shallow, highly-doped junctions with abrupt profiles. Recent experiments have shown the potential capabilities of laser processing of Ul
Autor:
Dominique Débarre, J.-L. Santailler, H. Akhouayri, D. Camel, C. Laviron, J. Boulmer, G. Kerrien, J. Venturini, D. Berard, M. Hernandez, T. Sarnet
Publikováno v:
Materials Science and Engineering: B. :105-108
Semiconductor doping is a critical step in microelectronic device fabrication. Particularly, ultra-shallow junction formation for the CMOS 45-nm node is today intensively studied. Laser thermal processing (LTP) has already shown potentiality to achie
Autor:
C. Laviron, J.-L. Santailler, J. Venturini, T. Sarnet, G. Kerrien, M. Hernandez, D. Camel, J. Boulmer
Publikováno v:
Thin Solid Films. :145-149
According to the International Technology Roadmap for Semiconductors (ITRS), source and drain extensions thickness for 65 nm and below technology nodes MOSFET lead to a major challenge. Rapid thermal processing (RTP) tools reach the limit of their ph
Publikováno v:
Thin Solid Films. :106-109
Gas immersion laser doping (GILD) is a very attractive technique to realize the ultra-shallow and highly doped junctions required by the International Technology Roadmap for Semiconductors (ITRS) for future CMOS technologies. In the present work, gas
Autor:
D. Zahorski, Dominique Débarre, T. Sarnet, J. Venturini, J. Boulmer, C. Laviron, M.N. Semeria, M. Hernandez, G. Kerrien
Publikováno v:
Journal de Physique IV (Proceedings). 108:71-74
Cette etude concerne les techniques de recuit laser (LTP) et de dopage laser direct (GILD) de jonctions ultra-minces, necessaires a la fabrication des composants microelectroniques du futur (generations CMOS sub 0,1 μm). Des jonctions de 20 a 80 nm
Autor:
Dominique Débarre, D. Zahorski, G. Kerrien, J.-L. Santailler, C. Laviron, D. Camel, J. Boulmer, M.N. Semeria, J. Venturini, M. Hernandez, T. Sarnet
Publikováno v:
Applied Surface Science. :345-351
In the last few years, laser thermal processing (LTP) has become a potential solution for sub-0.1 μm technology requirements, as focused by the international technology roadmap for semiconductors (ITRS). This paper presents a numerical simulation of
Publikováno v:
Applied Surface Science. 186:45-51
Laser-induced boron doping of silicon, in a special configuration where the precursor gas (BCl3) is injected and chemisorbed on the Si surface prior to each laser pulse, is shown to be a very attractive technique capable to meet the International Tec
Publikováno v:
2009 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
For mature technologies, main yield detractor is random defectivity. Nevertheless, some devices present higher defectivity than rest of devices. Out of process accident, design related defect is one of suspected root cause. Also, design-based defect