Zobrazeno 1 - 10
of 26
pro vyhledávání: '"G. Karlowatz"'
Publikováno v:
SAE Technical Paper Series.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36d4f4bb281f64c4a0b8ccc259fdd8b2
https://doi.org/10.4271/2018-01-1514
https://doi.org/10.4271/2018-01-1514
Publikováno v:
Mathematics and Computers in Simulation. 79:972-979
Full-band Monte Carlo simulation offers a very accurate simulation technique, but is often limited by its high demand on computation time. The advantage of a numerical representation of the band structure over an analytical approximation is the accur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ed98edd48cd5a90a0228a9e4a3f2da6
https://doi.org/10.1016/j.matcom.2008.02.021
https://doi.org/10.1016/j.matcom.2008.02.021
Publikováno v:
Solid-State Electronics. 52:1563-1568
The lowest conduction band of Si is often approximated by three pairs of equivalent parabolic valleys located near the X -points of the Brillouin zone. There are recent experimental indications that the effective mass depends on shear strain and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2efe0ae83e0949507d950ebb751d5065
https://doi.org/10.1016/j.sse.2008.06.019
https://doi.org/10.1016/j.sse.2008.06.019
Publikováno v:
IEEE Transactions on Electron Devices. 54:2183-2190
A model capturing the effect of general strain on the electron effective masses and band-edge energies of the lowest conduction band of silicon is developed. Analytical expressions for the effective mass change induced by shear strain and valley shif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7450577f8ed64c778de17805bc14ec0b
https://doi.org/10.1109/ted.2007.902880
https://doi.org/10.1109/ted.2007.902880
Publikováno v:
Journal of Computational Electronics. 6:55-58
The band structure of Silicon under arbitrary stress/strain conditions has been calculated using the empirical non-local pseudopotential method. It is shown that the change of the electron effective mass cannot be neglected for general stress conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::531607300273bdcfb770d62d89cc1d2e
https://doi.org/10.1007/s10825-006-0047-0
https://doi.org/10.1007/s10825-006-0047-0
Publikováno v:
IEEE Transactions on Electron Devices. 53:3054-3062
The application of mechanical stress to enhance the carrier mobility in silicon has been well established in the last few years. This paper probes into the electron conduction in biaxially and uniaxially stressed silicon in the nonlinear transport re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83db293bd23ff9f733b7b24405852204
https://doi.org/10.1109/ted.2006.885639
https://doi.org/10.1109/ted.2006.885639
Publikováno v:
ECS Transactions. 3:443-450
Full-band Monte Carlo simulations are performed to study the properties of hole transport in bulk Germanium under general strain conditions. The band structures are calculated with the empirical non-local pseudopotential method. For Monte Carlo simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1163d20fbd3493c672137a63c3fe7fd7
https://doi.org/10.1149/1.2355842
https://doi.org/10.1149/1.2355842
Publikováno v:
2007 International Semiconductor Device Research Symposium.
In this work we demonstrate that the two-band kldrp model ((Sverdlov et al., 2007) describes accurately dependences of the valley shifts and the effective masses on the shear strain component. The theory includes non-parabolicity effects due to the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::781aa6ce0c6328e4cdce03d8df913f4c
https://doi.org/10.1109/isdrs.2007.4422477
https://doi.org/10.1109/isdrs.2007.4422477
Publikováno v:
2006 International Conference on Simulation of Semiconductor Processes and Devices.
Full-band Monte Carlo simulations of electron transport in bulk Silicon under several strain conditions are performed. The band structures of Si for arbitrary stress and strain conditions are calculated using the empirical non-local pseudopotential m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::232e574bae71442c3b863d7edb2b4837
https://doi.org/10.1109/sispad.2006.282839
https://doi.org/10.1109/sispad.2006.282839
Publikováno v:
Scopus-Elsevier
Application of stress to Si causes a deviation of its lattice constant from the equilibrium value, thereby modifying the electronic band structure. A phenomenological approach to calculate the mobility tensor for electrons in strained Si at high elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ff779169d9bbf5522acace46ab7fd6b
https://doi.org/10.1109/istdm.2006.246511
https://doi.org/10.1109/istdm.2006.246511