Zobrazeno 1 - 10
of 112
pro vyhledávání: '"G. Kajrys"'
Autor:
H. Hübel, N. Perrin, Daniel Hojman, Ch. Bourgeois, H. Sergolle, D. G. Popescu, G. Kajrys, A. Korichi, L. L. Riedinger, J. A. Cameron, Johan Nyberg, W. Schmitz, M. P. Carpenter, J. K. Johansson, N. C. Schmeing, S. Pilotte, J. C. Waddington, S. Monaro, V. P. Janzen
Publikováno v:
Physical Review C. 55:1175-1191
Excited states in {sup 182}Pt have been studied via the heavy-ion reactions {sup 170}Yb({sup 16}O,4n), {sup 162}Dy({sup 24}Mg,4n), and {sup 163}Dy({sup 24}Mg,5n). {gamma}-ray coincidence measurements were performed with arrays of HPGe detectors at th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c3d23cd9751b80483101535c131bc08
https://doi.org/10.1103/physrevc.55.1175
https://doi.org/10.1103/physrevc.55.1175
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 90:419-423
Ion implanted GaAs samples have been chemically etched to form a small angle beveled surface. First order Raman spectroscopy has been performed along the bevel of as-implanted samples bombarded with 2.3 MeV Be and 10.9 MeV Se ions. The phonon confine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39709d42c02351037e32d5c99b0f3f80
https://doi.org/10.1016/0168-583x(94)95585-9
https://doi.org/10.1016/0168-583x(94)95585-9
Publikováno v:
Nuclear Physics A. 564:314-328
The 9Be + 9Be, 7Li+11B and α +14C reactions, leading to the 18O compound state in the excitation energy range between 25 and 31 MeV, have been studied by measurement of the cross sections for the characteristic g-rays emitted by the residual nuclei.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2fa953fe696a7fbaa1e6279254052ff
https://doi.org/10.1016/0375-9474(93)90523-z
https://doi.org/10.1016/0375-9474(93)90523-z
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :706-710
The structural and optical properties of SI GaAs crystals implanted with Se, Si and Be ions have been studied. The implanted fluences ranged from 1012 to 1015 cm−2 at energies of 2.3 MeV (Be), 7 MeV (Si) and 10.9 MeV (Se), producing buried damaged
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01e142d0a054be45a13900558ab49803
https://doi.org/10.1016/0168-583x(93)96214-w
https://doi.org/10.1016/0168-583x(93)96214-w
Publikováno v:
Journal of Crystal Growth. 130:433-443
We examine the relation between surface morphology and lattice distortions of a number of GaxIn1-xP epilayers (x ≈ 0.04) grown on InP (001) substrates using atomic force microscopy (AFM) and high resolution X-ray diffractometry (HRXRD). The heteroe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ec807c744ecd4047ec3ae345883249f
https://doi.org/10.1016/0022-0248(93)90530-a
https://doi.org/10.1016/0022-0248(93)90530-a
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 77:517-523
Two-dimensional mu-PIXE scans of sections through large (1 to 2 mm) vented “water trees”, found at the inner semicon-XLPE (cross-linked polyethylene) interface in underground HV cables, were made at 50 μm spacing with a proton energy of 1.0 MeV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50b2e2c83ba4649f131fc51dc1d4f928
https://doi.org/10.1016/0168-583x(93)95589-w
https://doi.org/10.1016/0168-583x(93)95589-w
Autor:
G. Kajrys, Bernard Y. Malo, Jacques Albert, Derwyn C. Johnson, Kenneth O. Hill, Francois Bilodeau, John L. Brebner
Publikováno v:
Optics letters. 18(14)
The optical absorption spectrum of ion-implanted silica is shown to become dichroic when it is photobleached with polarized 248-nm light. The dichroism is modeled by a photobleaching process that bleaches color centers preferentially depending on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec3bd86abb3992065cf009c17f642a9d
https://pubmed.ncbi.nlm.nih.gov/19823309
https://pubmed.ncbi.nlm.nih.gov/19823309
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :676-679
Silicon-on-insulator (SOI) structures, formed by implanting n-type 〈100〉 silicon substrates with 3 × 1017, 6 × 1017 and 8 × 1017 O2+ ions cm−2 at 6 MeV, have been characterized by channeling/Rutherford backscattering spectroscopy (RBS). An a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f3166d8bf0d18e7d03d7bcb5c6973bb
https://doi.org/10.1016/0168-583x(91)95301-s
https://doi.org/10.1016/0168-583x(91)95301-s
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :609-613
Semi-insulating {100} GaAs wafers have been implanted with 3 MeV 9 Be 2+ , 7 MeV 28 Si 2+ and 8 MeV 80 Se 2+ ions to total doses ranging from 10 14 to 10 16 ions/cm 2 and the resulting damage has been profiled by channeling/Rutherford backscattering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8680972b02855474f38b4d86829b7db7
https://doi.org/10.1016/0168-583x(91)95287-n
https://doi.org/10.1016/0168-583x(91)95287-n
Autor:
G. Kajrys, D.G. Burke
Publikováno v:
Nuclear Physics A. 517:1-26
Levels in 197,199 Pt have been studied using the 198 Pt( d ,t) 197 Pt, 198 Pt( d , p) 199 Pt and 196,198 Pt(t, d) 197,199 Pt reactions with 18 MeV deuterons and tritons. The charged particle spectra were analysed with a magnetic spectrometer. Spins a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ffecb2bdbebd7f7f619a18f5b2fa449
https://doi.org/10.1016/0375-9474(90)90258-n
https://doi.org/10.1016/0375-9474(90)90258-n