Zobrazeno 1 - 10
of 22
pro vyhledávání: '"G. K. Safaraliev"'
Publikováno v:
Вестник Дагестанского государственного технического университета: Технические науки, Vol 38, Iss 3, Pp 15-20 (2016)
Method of magnetron sputtering targets polycrystalline SiC-AlN on substrates SiC and Al2O3 thin films received solid solutions (SiC)1-x(AlN)x. The methods of Xray and electron microscopy studies the structure and composition of films. There are facto
Externí odkaz:
https://doaj.org/article/9de1b5e0a6d244f7acf0010c30291bed
Autor:
A. S. Gusev, N. I. Kargin, S. M. Ryndya, G. K. Safaraliev, N. V. Siglovaya, M. O. Smirnova, I. O. Solomatin, A. O. Sultanov, A. A. Timofeev
Publikováno v:
Technical Physics. 66:869-877
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a151bcae1ea44784585934c50c5a3b5b
https://doi.org/10.1134/s1063784221060074
https://doi.org/10.1134/s1063784221060074
Publikováno v:
Herald of Dagestan State University. 36:80-87
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9f1c750b6c4f6c2600af4d96a5dd09c
https://doi.org/10.21779/2542-0321-2021-36-2-80-87
https://doi.org/10.21779/2542-0321-2021-36-2-80-87
Autor:
G. K. Safaraliev, N. V. Siglovaya, S. M. Ryndya, A. O. Sultanov, N. I. Kargin, A. S. Gusev, A. A. Timofeev
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:280-284
Experimental and theoretical studies of the processes of mesoporous-silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-gap semiconductors are performed. Analytical expressions for t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::020443d423c9cf17ec532ee0f9df1428
https://doi.org/10.1134/s1027451019020083
https://doi.org/10.1134/s1027451019020083
Autor:
V. I. Altukhov, A. V. Sankin, V. F. Antonov, R. Kh Dadashev, G. K. Safaraliev, D. Z. Elimkhanov
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1064:012009
The paper presents models of bands (levels) in solid (SiC)1-x(AlN)x luminescence centers and n-SiC/p-(SiC)1-x(AlN)x heterostructures (light-emitting diodes). The diagram of (SiC)1-x(AlN)x energy gaps shows the positions of luminescence levels, subjec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::983ef7ce81c7295e09fde724a64b5ef7
https://doi.org/10.1088/1757-899x/1064/1/012009
https://doi.org/10.1088/1757-899x/1064/1/012009
Autor:
G. D. Kardashova, G. K. Safaraliev, R. R. Akhmedov, Sh. Sh. Shabanov, F. G. Al-Heyun, S. Sh. Shabanov, S. N. Emirov
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 80:500-503
Experimental measurements of the effect high pressure and temperature have on the thermal conductivity of silicon carbide SiC–BeO ceramics are presented. The pressure is varied in an interval of up to 400MPa; temperature, in the range of 273–523
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5faa3e728cc1d53f98e409bca6faaae1
https://doi.org/10.3103/s1062873816050154
https://doi.org/10.3103/s1062873816050154
Autor:
N. I. Kargin, G. K. Safaraliev, A. S. Gusev, A. O. Sultanov, N. V. Siglovaya, S. M. Ryndya, A. A. Timofeev
In this paper, an experimental and theoretical study of the processes of mesoporous silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-band-gap semiconductors is performed. Experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e115b3e62c75271a1d3d05dc1605d33
Autor:
I. S. Kas’yanenko, V. I. Altukhov, A. V. Sankin, B. A. Bilalov, M. K. Kurbanov, G. K. Safaraliev
Publikováno v:
Russian Microelectronics. 44:404-409
A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states Ei localized at the interface has been proposed. It has been shown that taking into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8958f74060ed726e684a8649ffef59bb
https://doi.org/10.1134/s1063739715060062
https://doi.org/10.1134/s1063739715060062
Publikováno v:
Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki, Vol 38, Iss 3, Pp 15-20 (2016)
Method of magnetron sputtering targets polycrystalline SiC-AlN on substrates SiC and Al2O3 thin films received solid solutions (SiC)1-x(AlN)x. The methods of Xray and electron microscopy studies the structure and composition of films. There are facto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::861e4e20da58a067153c9a29bf602b65
https://doi.org/10.21822/2073-6185-2015-38-3-15-20
https://doi.org/10.21822/2073-6185-2015-38-3-15-20
Publikováno v:
Inorganic Materials. 49:57-61
We have studied the structure, relative dielectric permittivity (ɛ), and dielectric loss tangent (tanδ) of SiC-AlN ceramic materials. The results demonstrate that both ɛ and tanδ are anomalously high in the composition range 30–50 wt % AlN at l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ac14307b6d11b645c965a05678fc721
https://doi.org/10.1134/s0020168513010135
https://doi.org/10.1134/s0020168513010135