Zobrazeno 1 - 10
of 19
pro vyhledávání: '"G. K. Krivyakin"'
Publikováno v:
Technical Physics Letters. 47:609-612
Publikováno v:
Semiconductors. 54:754-758
The processes of crystallization of amorphous germanium films of various thicknesses and multilayer germanium/silicon nanostructures under isothermal annealing (T = 440°C) were studied. Samples were grown on glass substrates using the method of plas
Autor:
S. V. Zabotnov, Pavel K. Kashkarov, Alexey A. Popov, Denis E. Presnov, D. V. Shuleiko, Alexander V. Pavlikov, G. K. Krivyakin, A. V. Kolchin, Leonid A. Golovan, Vladimir A. Volodin
Publikováno v:
Technical Physics Letters. 46:560-563
The processes of femtosecond laser annealing of thin-film multilayer structures based on amorphous silicon and germanium produced by plasma-chemical deposition on a glass substrate have been studied. The formation of periodic structures on the surfac
Autor:
G. D. Ivlev, S. Gusakova, S. L. Prokopyev, Vladimir A. Volodin, G. K. Krivyakin, Alexey A. Popov
Publikováno v:
Semiconductors. 53:400-405
The processes of the crystallization of amorphous germanium films and multilayer germanium/silicon structures upon exposure to nanosecond (70 ns) ruby laser radiation (λ = 694 nm) are studied. The samples are grown on silicon and glassy substrates b
Autor:
K. N. Astankova, A. S. Kozhukhov, G. K. Krivyakin, Y. A. Zhivodkov, D. V. Sheglov, V. A. Volodin
Publikováno v:
Journal of Laser Applications. 34:022002
In the present work, the low-fluence nonablating femtosecond laser irradiation (λ = 800 nm) of the GeO2 layer with Ge nanoclusters protected by SiO2 layers is studied by different types of microscopy (optical microscopy, atomic force microscopy, and
Autor:
Gennadiy N. Kamaev, Pavel Geydt, Ivan A. Azarov, A. A. Gismatulin, Igor P. Prosvirin, G. K. Krivyakin, Zhang Fan, Michel Vergnat, Vladimir A. Volodin
Publikováno v:
Electronics, Vol 9, Iss 2103, p 2103 (2020)
Electronics
Volume 9
Issue 12
Electronics
Volume 9
Issue 12
Metal&ndash
insulator&ndash
semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposit
insulator&ndash
semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposit
Publikováno v:
SN Applied Sciences. 2
The phase transformations of stoichiometric HfO2 and non-stoichiometric HfOx oxides grown by ion-beam sputtering-deposition during their electron beam crystallization were investigated. It was found that the sequences of crystalline phase formations
Autor:
S. G. Cherkova, M. P. Gambaryan, Mathieu Stoffel, Vladimir A. Volodin, Michel Vergnat, Hervé Rinnert, G. K. Krivyakin
Publikováno v:
Physics of the Solid State
Physics of the Solid State, Springer, 2020, 62 (3), pp.492-498. ⟨10.1134/S1063783420030105⟩
Physics of the Solid State, Springer, 2020, 62 (3), pp.492-498. ⟨10.1134/S1063783420030105⟩
Films of nonstoichiometric germanium–silicon glasses of two types—GeOx[SiO](1 – x) and GeOx[SiO2](1 – x)—are deposited onto cold Si (001) substrates by evaporating GeO2 and SiO (or SiO2) powders simultaneously in high vacuum. Film samples i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a1d4ed682a01c38327061e12acfb3fc
https://hal.archives-ouvertes.fr/hal-02960811
https://hal.archives-ouvertes.fr/hal-02960811
Autor:
A. V. Novikov, Artem N. Yablonskiy, M. V. Stepikhova, G. K. Krivyakin, A. V. Dvurechenskii, E. E. Rodyakina, B. I. Fomin, P. A. Kuchinskaya, Vladimir Zinovyev, Zh. V. Smagina
Publikováno v:
Semiconductors. 52:1150-1155
A method for creation of Ge/Si structures with space-arranged nanoislands by heteroepitaxy on the pre-patterned Si(001) substrates with a square grid of the etched pits is developed. The influence of depth and inter-pit spacing on the nucleation and
Ion-Beam Synthesis of the Crystalline Ge Phase in SiO x N y Films upon Annealing under High Pressure
Publikováno v:
Semiconductors. 52:268-272
The nucleation of the crystalline Ge phase in SiO x N y films implanted with Ge+ ions with the energy 55 keV to doses of 2.1 × 1015–1.7 × 1016 cm–2 and then annealed at a temperature of Ta = 800–1300°C under pressures of 1 bar and 1–12 kba