Zobrazeno 1 - 9
of 9
pro vyhledávání: '"G. K. Celler"'
Publikováno v:
Science. 259:1887-1890
Van der Waals forces that bind C[sub 60] molecular solids are found to be sufficiently strong to allow the reproducible fabrication of free-standing C[sub 60] membranes on (100) silicon wafers. Membranes, 2,000 to 6,000 angstroms thick, were fabricat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::223cbb92f8b24690ab4e3325e0943150
https://doi.org/10.1126/science.259.5103.1887
https://doi.org/10.1126/science.259.5103.1887
Publikováno v:
Wafer Bonding ISBN: 9783642059155
Wafer bonding was established in the 1980s as convenient and reliable means of producing multilayer structures consisting of crystalline and amorphous layers [1,2]. The science of wafer bonding was developed and the practice of getting two flat wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72cbcc47bb213711116449130f3acb1e
https://doi.org/10.1007/978-3-662-10827-7_3
https://doi.org/10.1007/978-3-662-10827-7_3
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2947
Sputter‐deposited tungsten (W) thin films exhibit high intrinsic tensile and compressive stresses. When used as the absorber for x‐ray lithographic masks, the stress induced in‐plane and out‐of‐plane distortions produce significant very lar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2baf794955de4785fb600dfaac75cfdb
https://doi.org/10.1116/1.586566
https://doi.org/10.1116/1.586566
Autor:
Ralph Bray, G. K. Celler
Publikováno v:
Applied Physics Letters. 27:53-55
A simple new method is described for probing acoustoelectric domains in n‐GaAs through their strong photoconductive response to a focused light beam. This permits a scan of the spatial distribution and propagation of the amplified acoustic flux in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d4f2ffd28451987419b5dc7471bc3a3
https://doi.org/10.1063/1.88363
https://doi.org/10.1063/1.88363
Publikováno v:
AIP Conference Proceedings.
High doses of the transition elements Fe, Cu and Pt were inplanted into Si and the amorphous layers so produced were annealed using scanning, Q‐switched, Nd‐YAG laser radiation. Comparative furnace anneals were also performed. Annealed layers wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b76138ff9bd9ad2d2dffe75528165d1f
https://doi.org/10.1063/1.31674
https://doi.org/10.1063/1.31674
Publikováno v:
Optical Properties of Highly Transparent Solids ISBN: 9781468421804
We present several techniques to test and characterize GaAs for residual deep impurities and weak optical absorption at 1.06 µ. 90° Raman scattering intensities were measured as a function of position along a sample to probe the attenuation of a co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50ae7854d2c47ebcc9e76ff26eb0162b
https://doi.org/10.1007/978-1-4684-2178-1_17
https://doi.org/10.1007/978-1-4684-2178-1_17
Publikováno v:
AIP Conference Proceedings.
This paper demonstrates that significant concentrations of Pb implanted into silicon can appreciably inhibit recrystallization for both laser and conventional furnace annealing. Pulsed laser irradiation resulted in the best silicon regrowth and both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee296299af05b87810d34c40bd28754
https://doi.org/10.1063/1.31685
https://doi.org/10.1063/1.31685
Autor:
G. K. Celler, L. E. Trimble
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7:1675
Single crystalline Si films, heavily doped with boron for etch selectivity and often counterdoped with Ge to reduce stresses, are now commonly used as membranes in x‐ray masks. We have investigated preparation and properties of much simpler membran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::546b9052d364c02967be888aecb21a82
https://doi.org/10.1116/1.584480
https://doi.org/10.1116/1.584480