Zobrazeno 1 - 10
of 124
pro vyhledávání: '"G. Kästner"'
Autor:
G. Kästner, U. Gösele
Publikováno v:
Philosophical Magazine. 84:3803-3824
The limit of crystal lattice coherency of a cross-sectional heteroepitaxial junction in a nanowire is calculated in terms of the critical nanowire radius R c, based on a general calculation of elastic stresses in a long cylindrical rod. R c is derive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d87b1ea99a0ee4dd1eb7e190b6a916dd
https://doi.org/10.1080/1478643042000281389
https://doi.org/10.1080/1478643042000281389
Autor:
G. Kästner
Publikováno v:
physica status solidi (a). 195:367-374
In spite of outstanding experimental success in reducing the density of threading dislocations (TDs) within thin films grown heteroepitaxially on using a compliant substrate instead of a conventional bulk substrate, theories of strain relief on compl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b4a14a92b976fd559d1caadd65fdb56
https://doi.org/10.1002/pssa.200305936
https://doi.org/10.1002/pssa.200305936
Publikováno v:
Physica C: Superconductivity. 351:103-117
The impact of microscopic defects upon the microwave properties of high- T c superconductor (HTS) films is examined. YBa 2 Cu 3 O 7 films with different size and densities of Y 2 O 3 precipitates are grown on LaAlO 3 and sapphire by variation of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48ddb4ce83a88302690b25eb7afae127
https://doi.org/10.1016/s0921-4534(00)01565-3
https://doi.org/10.1016/s0921-4534(00)01565-3
Autor:
Michael Lorenz, Dietrich Hesse, I. Stanca, G. Kästner, V. Riede, Holger Hochmuth, D. Matusch, Masanobu Kusunoki, V.L. Svetchnikov
Publikováno v:
IEEE Transactions on Appiled Superconductivity. 11:3209-3212
Large-area pulsed laser deposition (PLD) has reached a state in terms of film quality and reproducibility which makes possible now real market applications of PLD-YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) thin films on both sides of R-plane sapp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8af0398242ba31944adb6bcae536099
https://doi.org/10.1109/77.919747
https://doi.org/10.1109/77.919747
Publikováno v:
Applied Physics A: Materials Science & Processing. 70:13-19
Uniform direct or fusion wafer bonding of GaAs wafers up to 4 inch in diameter was achieved by means of two methods: (i) pre-heating, bonding at elevated temperatures and post-annealing in a H2 atmosphere (gas environmental hot bonding) and (ii) bond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fc3c29afadf728bd409988d1b709c19
https://doi.org/10.1007/s003390050004
https://doi.org/10.1007/s003390050004
Autor:
Andreas Schumacher, P. Kopperschmidt, St. Senz, Roland Scholz, Gertrud Dr. Kräuter, Y. Bluhm, Y.-L. Chao, L.-J. Huang, T.-H. Lee, Q.-Y. Tong, G. Kästner, Ulrich Gösele
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:1145-1152
Semiconductor wafer bonding has increasingly become a technology of choice for materials integration in microelectronics, optoelectronics, and microelectromechanical systems. The present overview concentrates on some basic issues associated with wafe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d2d3e8b75c051ebe7538e83cca19287
https://doi.org/10.1116/1.581788
https://doi.org/10.1116/1.581788
Autor:
T. Kaiser, Michael Lorenz, Matthias Hein, Dietrich Hesse, G. Kästner, St. Senz, Holger Hochmuth, C. Schafer
Publikováno v:
Superconductor Science and Technology. 12:366-375
Epitaxial c-oriented YBCO films laser deposited onto 3 in diameter CeO2-buffered sapphire wafers and LaAlO3 cylinders as well as sputter deposited onto 2 in diameter LaAlO3 wafers were characterized by integral and spatially resolved measurements of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05f8c4a1458b390d42c47f1076244ccb
https://doi.org/10.1088/0953-2048/12/6/307
https://doi.org/10.1088/0953-2048/12/6/307
Phase identification of micro and macro bubbles at the interface of directly bonded GaAs on sapphire
Publikováno v:
Journal of Materials Science. 33:2073-2077
Direct wafer bonding (DWB) of 3″ GaAs and R-cut sapphire was performed in a microcleanroom using ultra pure water as cleaning agent. The initial bonding is mediated by Van der Waals forces and hydrogen bridges. The bond energy is released by subseq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::018353ffc75bae8749347e937066d6ca
https://doi.org/10.1023/a:1004310917627
https://doi.org/10.1023/a:1004310917627
Autor:
G. Kästner, H. Johansen
Publikováno v:
Journal of Materials Science. 33:3839-3848
A significant increase in the ultraviolet laser-damage threshold of CaF2 (1 1 1) single-crystal surfaces after surface finishing by chemomechanical polishing (CMP) with colloidal silica has been demonstrated as compared to conventional mechanical-abr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d1abd4cc4da6dd664f2c4a023606266
https://doi.org/10.1023/a:1004695217861
https://doi.org/10.1023/a:1004695217861
Publikováno v:
Applied Physics A: Materials Science & Processing. 66:13-22
these maximum relieved strains are φ0/2, φ0, 3φ0/2 and 2φ0 respectively, at the end of each of stages I–IV. Films relaxed in each stage are characterized by a specific set of macroscopic crystallographic features that can be observed experiment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2837bd393f06edfde55b294d088bb50
https://doi.org/10.1007/s003390050631
https://doi.org/10.1007/s003390050631