Zobrazeno 1 - 10
of 49
pro vyhledávání: '"G. Juárez-Díaz"'
Autor:
O. Portillo Moreno, M. Chávez Portillo, G. Juárez Díaz, A. Ramírez, R. Gutiérrez Pérez, G. Hernández Téllez, G.E. Moreno Morales, A. Sosa Sánchez
Publikováno v:
Materials Letters. 189:313-316
The optical absorption spectra in the UV-region of crystals of enantiopure imines (I, I-F, I-Cl and I-Br) derived from 2-naphthaldehyde is reported. Atomic Force Microscopy (AFM), XRD, absorbance and photoluminiscence (PL) were registered. Substantia
Autor:
G. Juárez Díaz, J. Martinez-Juarez, P. López Salazar, R. Peña-Sierra, J. I. Contreras-Rascon, J. Díaz-Reyes
Publikováno v:
Mexican Journal of Materials Science and Engineering, Vol 1, Iss 2, Pp 35-39 (2014)
In this work we report the results of structural and electrical characterization realized on zinc oxide single crystal samples with (001) orientation, which were doped with antimony. Doping was carried out by antimony thermal diffusion at 1000 °C
Autor:
G. Juárez Díaz, J. Martínez-Juárez, M. Galván-Arellano, J. A. Balderas-López, Joel Díaz-Reyes
Publikováno v:
Materials Science in Semiconductor Processing. 15:472-479
AlxGa1−xSb ternary solid solutions lattice-matched to the GaSb (001) substrate with composition in the range 0.05≤x≤0.2 were grown by liquid phase epitaxy. High resolution X-ray diffraction and Raman scattering techniques were applied to charac
Autor:
S. A. Tomás, Georgina Beltrán-Pérez, V.M. Castaño, J. Martínez-Juárez, R. Palomino-Merino, M. Judith Percino, G. Juárez-Díaz, R. Lozada-Morales, Víctor M. Chapela
Publikováno v:
Journal of Electronic Materials. 40:2388-2391
Nanocrystalline 2,6-distyrylpyridine (2,6-DStP)-doped TiO2 monoliths were prepared by the sol–gel technique. Different concentrations of the 2,6-DStP doping agent were utilized. Samples were characterized by x-ray diffraction, photoacoustic spectro
Autor:
R. Lozada-Morales, G. Juárez-Díaz, O. Portillo-Moreno, G. López-Calzada, J. Martínez-Juárez, Ma. E. Zayas, J. Carmona-Rodriguez, Orlando Zelaya-Angel, I. Pancardo-Rodriguez, Sergio Jiménez-Sandoval, F. Rodriguez-Melgarejo
Publikováno v:
Optical Materials. 32:1090-1094
The ion Er3+ was introduced into a new kind of glassy matrices prepared from a mixture of CdO–ZnO–V2O5 and Er(NO3)3·5H2O as source of Er3+ ions. The obtained glasses were characterized by infrared spectroscopy and micro photoluminescence and mic
Publikováno v:
physica status solidi c. 7:1203-1206
Doped GaSb (Gallium Antimonide) films on p-GaSb substrates have been obtained by means of a low-cost and fast-growth method: the liquid phase epitaxy (LPE) technique. The growth temperature was 400 °C, and the growth time was varied between1 and 5 m
Autor:
G. Juárez-Díaz, H. Solache-Carranco, G. Romero-Paredes R., R. Peña-Sierra, J. Martínez-Juárez, R. Galeazzi, A. Esparza-García, M. Briseño-García, J. A. Henao
Publikováno v:
Powder Diffraction. 23:S94-S97
Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photol
Autor:
M. Chávez Portilloa, A. Sosa Sánchez, G. Juárez Díaz, L. A. Chaltel Lima, S. Cruz Cruz, R. Gutierrez Pérez, G. Hernández Téllez, O. Portillo Moreno
Publikováno v:
Benemérita Universidad Autónoma de Puebla
BUAP
Redalyc-BUAP
BUAP
Redalyc-BUAP
CdS-CdCO3 thin films were grown by chemical bath deposition. Different constant deposition temperatures were employed in the range of 20-80±C. From X-ray Diffraction (XRD) results can be observed that intensity of CdS peak is abruptly reduced when d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::e2d4d202dd317e1cddf006577eadf7dc
http://www.redalyc.org/articulo.oa?id=57036862003
http://www.redalyc.org/articulo.oa?id=57036862003
Autor:
G. Juárez-Díaz, F. de Anda, V.H. Compeán-Jasso, E. Momox-Beristain, J. Martínez-Juárez, V.A. Mishurnyi
Publikováno v:
Thin Solid Films. 520:700-702
It is shown that the conductivity of the substrate has a non negligible effect on the thickness and composition of epitaxial layers grown by Liquid Phase Epitaxy. The growth experiments have been done on the systems GaAs/GaAs, GaAlSb/GaSb and GaInAsS
Autor:
V.H. Compeán-Jasso, E. Momox Beristain, G. Juárez-Díaz, V.A. Mishurnyi, Víctor Hugo Méndez-García, J. Martínez-Juárez, F. de Anda, J. Olvera-Hernández
Publikováno v:
Thin Solid Films. 519:3029-3031
It is shown experimentally that the thickness and composition of Ga 1 − x Al x Sb layers grown by liquid phase epitaxy on Gasb substrates depend on the conductivity type of the substrates. To avoid experimental uncertainties that naturally happen f