Zobrazeno 1 - 10
of 14
pro vyhledávání: '"G. J. Przybylek"'
Autor:
M. T. Asom, E.J. Laskowski, Stephen J. Pearton, M.W. Focht, Fan Ren, L.M.F. Chirovsky, R. F. Kopf, G. J. Przybylek, T.K. Woodward, S.-S. Pei, L.E. Smith, R.E. Leibenguth, G.D. Guth, J. M. Kuo, Anthony L. Lentine, L.A. D'Asaro
Publikováno v:
IEEE Electron Device Letters. 13:528-531
The authors have demonstrated a smart pixel prototype field-effect-transistor-self-electrooptic-effect-device (FET-SEED) integrated optoelectronic amplifier utilizing process technology suitable for flexible design and fabrication of high-yield optoe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::400fc72080be1f4301696452732986e1
https://doi.org/10.1109/55.192823
https://doi.org/10.1109/55.192823
Autor:
Ronald E. Leibenguth, L.A. D'Asaro, Joseph Michael Freund, David A. B. Miller, L.M.F. Chirovsky, Rick L. Morrison, G.D. Guth, Frederick B. McCormick, F. A. P. Tooley, Anthony L. Lentine, Sonya L. Walker, L. E. Smith, M.W. Focht, G. J. Przybylek
Publikováno v:
IEEE Journal of Quantum Electronics. 28:1539-1553
Two-dimensional arrays of logic self-electrooptic effect devices (L-SEEDs), consisting of electrically connected quantum-well p-i-n diode detectors and modulators are demonstrated. The topology of the electrical connections between the detectors is e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b783b48e910975ed7ee6c8bf14c5e6
https://doi.org/10.1109/3.135308
https://doi.org/10.1109/3.135308
Autor:
S.-S. Pei, L.E. Smith, Mark D. Feuer, M.T. Asom, T.K. Woodward, Anthony L. Lentine, J.M. Kuo, M.W. Focht, G. J. Przybylek, R.E. Leibenguth, L.M.F. Chirovsky, F. Ren, G. Guth, L.A. D'Asaro, R.F. Kopf, E.J. Laskowski
Publikováno v:
IEEE Photonics Technology Letters. 4:614-617
The authors experimentally demonstrate the operation of a fully integrated optoelectronic circuit with optical input and output consisting of a p-i-n photodetector and load resistor, a depletion-mode GaAs-Al/sub x/Ga/sub 1-x/As heterostructure field-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a67300b108fcd50ddbf3fb1db0840fa
https://doi.org/10.1109/68.141986
https://doi.org/10.1109/68.141986
Autor:
V. Swaminathan, L. E. Smith, R.E. Leibenguth, G.D. Guth, M.W. Focht, G. J. Przybylek, Joseph Michael Freund, L.A. D'Asaro
Publikováno v:
Applied Physics Letters. 61:687-689
We have used an electrical technique to determine the ambipolar lifetime in p‐i‐n GaAs/AlGaAs self‐electro‐optic‐effect devices in which the i region consists of a multiple quantum well structure (MQW). From an analysis of the voltage drop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d82067a5cf89675668e1fe3b865d16e
https://doi.org/10.1063/1.107822
https://doi.org/10.1063/1.107822
Autor:
L.M.F. Chirovsky, G. D. Guth, Joseph Michael Freund, L. E. Smith, G. J. Przybylek, Anthony L. Lentine, Marlin W. Focht, Ronald E. Leibenguth
Publikováno v:
Applied Physics Letters. 60:1809-1811
We describe symmetric self‐electro‐optic effect devices (S‐SEEDs) with clamping diodes connected to the center node of the devices to ensure both diodes of the S‐SEEDs have an electric field across them at all times. These diode‐clamped S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc0dfa931266e593c2b473b280cf0df2
https://doi.org/10.1063/1.107171
https://doi.org/10.1063/1.107171
Autor:
K.G. Glogovsky, L.M.F. Chirovsky, G. J. Przybylek, G. D. Guth, Moses T. Asom, L. E. Smith, Marlin W. Focht, Keith W. Goossen, Robert A. Morgan
Publikováno v:
Applied Physics Letters. 59:1049-1051
Symmetric self‐electro‐optic effect devices (S‐SEEDs) using extremely shallow GaAs/Al0.04Ga0.96As multiple quantum wells are demonstrated. By exploiting mainly exciton ionization, rather than the usual quantum‐confined Stark shift, room‐tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d759a23592e0ee8d9831c0518e52bd
https://doi.org/10.1063/1.106341
https://doi.org/10.1063/1.106341
Autor:
L. M. F. Chirovsky, M. W. Focht, J. M. Freund, G. D. Guth, R. E. Leibenguth, G. J. Przybylek, L. E. Smith, L. A. D’Asaro, A. L. Lentine, R. A. Novotny, D. B. Buchholz
Publikováno v:
Photonic Switching.
For optical processing to become a reality, large arrays of optical processing gates are required with low energies and fast switching speeds. Arrays of symmetric self electro-optic effect devices (S-SEEDs) with as many as 2048 devices (64 x 32) have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc99adc8bb1b01ec40035a9d65ccb49e
https://doi.org/10.1364/phs.1991.thb3
https://doi.org/10.1364/phs.1991.thb3
Autor:
A. L. Lentine, L. M. F. Chirovsky, M. W. Focht, J. M. Freund, G. D. Guth, R. E. Leibenguth, G. J. Przybylek, L. E. Smith, L. A. D’Asaro, D. A. B. Miller
Publikováno v:
Optical Computing.
Arrays of symmetric self electro-optic effect devices (S-SEEDs) have been made with low operating energies and fast switching speeds [1,2]. The device has the characteristics of a set-reset latch, although it can be made to do logic functions such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db128396963da0d9654da92075858b79
https://doi.org/10.1364/optcomp.1991.ma2
https://doi.org/10.1364/optcomp.1991.ma2
Autor:
L. E. Smith, R.E. Leibenguth, L.A. D'Asaro, V. Swaminathan, M.W. Focht, G. J. Przybylek, Joseph Michael Freund, G.D. Guth
Publikováno v:
MRS Proceedings. 240
The forward current-voltage (I-V) characteristics of GaAs/AlGaAs Self Electro-optic Effect Device (SEED) p-i-n diodes were measured. The I-V curves exhibited a diode like behavior with an ideality factor of 2 for voltages in the range 0.5–1.25V. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d09a43d27b3882a8ffbb8f4f51d09f0
https://doi.org/10.1557/proc-240-537
https://doi.org/10.1557/proc-240-537
Autor:
A. L. Lentine, L. M. F. Chirovsky, M. W. Focht, J. M. Freund, G. D. Guth, R. E. Leibenguth, G. J. Przybylek, L. E. Smith, L. A. D’Asaro, D. A. B. Miller
Publikováno v:
Photonic Switching.
The division between optical processing and electronic processing with optical interconnections can be a fuzzy one at best. Because of the limited functionality acheivable in "all-optical" logic gates, a growing interest is seen in "optical" processi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b059e2898cd17ab3e4d5dbade53e4a98
https://doi.org/10.1364/phs.1991.thc4
https://doi.org/10.1364/phs.1991.thc4