Zobrazeno 1 - 10
of 130
pro vyhledávání: '"G. J. Lapeyre"'
Autor:
G. J. Lapeyre
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :675-678
The first energy-resolved photoemission experiments which used synchrotron radiation were performed on the Tantalus Storage Ring at the University of Wisconsin. The Ring was the first dedicated light source and during the winter of 1970–1971 D.E. E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc9890581f0e0bd71906722d156655f1
https://doi.org/10.1016/j.elspec.2005.01.176
https://doi.org/10.1016/j.elspec.2005.01.176
Autor:
Run Su, Yuji Baba, Mamatimin Abbas, Z. Y. Wu, Jiaou Wang, G. J. Lapeyre, Kurash Ibrahim, Haijie Qian, Charles S. Fadley, Norman Mannella
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :445-449
We have measured the photon energy dependence of the O 1s2p2p Auger line at the O K threshold, below Mn L 2,3 as well as well above the Mn L 2,3 -edge of colossal magnetoresistance (CMR) manganites Pr 1− x Sr x MnO 3 (PSMO) with x =0.0 and x =0.3 c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3d0ba5a58a9cd25d431044ad776026a
https://doi.org/10.1016/j.elspec.2004.02.154
https://doi.org/10.1016/j.elspec.2004.02.154
Publikováno v:
Surface Review and Letters. 10:925-932
The k derivative spectra (KDS) transform is used for construction of the three-dimensional atomic structure of the C 2 H 4/ Si (100)-(2×1) system from photoelectron diffraction data. The image function obtained by the KDS transform clearly observes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49993a09700a2833138ec2186cbbac34
https://doi.org/10.1142/s0218625x03005670
https://doi.org/10.1142/s0218625x03005670
Autor:
G. J. Lapeyre, A. P. Young, Fernando Ponce, H. Cruguel, T. M. Levin, J. Schäfer, Y. Yang, Charles W. Tu, Yoshiki Naoi, S. H. Xu, G. H. Jessen, Leonard J. Brillson, J. D. McKenzie, C. R. Abernathy
Publikováno v:
Scopus-Elsevier
We have used low energy electron-excited nanoluminescence (LEEN) spectroscopy to probe the localized electronic states at GaN free surfaces, metal–GaN contacts, and GaN/InGaN quantum well interfaces. These depth-resolved measurements reveal the pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::229ca8a4721441f77ab681513843e706
https://doi.org/10.1016/s0921-5107(00)00367-6
https://doi.org/10.1016/s0921-5107(00)00367-6
Autor:
Jonathan D. Denlinger, Y. Yang, C. Chen, M. Keeffe, E. Rotenberg, John T. Yates, G. J. Lapeyre, S. H. Xu, M. Yu
Publikováno v:
Physical Review Letters. 84:939-942
A new adsorption site for adsorbed acetylene on Si(100) is observed by photoelectron imaging based on the holographic principle. The diffraction effects in the carbon $1s$ angle-resolved photoemission are inverted (including the small-cone method) to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c397d09e899e4e2dd32451a1c37643
https://doi.org/10.1103/physrevlett.84.939
https://doi.org/10.1103/physrevlett.84.939
Autor:
G. H. Jessen, A. P. Young, C. R. Abernathy, G. J. Lapeyre, T. M. Levin, Yoshiki Naoi, J. D. MacKenzie, Y. Yang, Fernando Ponce, Charles W. Tu, Leonard J. Brillson
Publikováno v:
Physica B: Condensed Matter. :70-74
We have used low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy combined with ultrahigh vacuum (UHV) surface science techniques to probe deep level defect states at GaN free surfaces, metal-GaN contacts and GaN/InGaN quantum well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05cacc9ebe656ac2c76355f7b540eb9f
https://doi.org/10.1016/s0921-4526(99)00409-3
https://doi.org/10.1016/s0921-4526(99)00409-3
Publikováno v:
Physical Review B. 60:11586-11592
The adsorption and reaction of acetylene with the $\mathrm{Si}(100)\ensuremath{-}2\ifmmode\times\else\texttimes\fi{}1$ surface has been studied using high-resolution photoemission by monitoring the $\mathrm{Si}2p, \mathrm{C}1s,$ and valence-band (VB)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53b6aa4207df58db662679edcbc0513e
https://doi.org/10.1103/physrevb.60.11586
https://doi.org/10.1103/physrevb.60.11586
Autor:
Y. Yang, J. Schäfer, Leonard J. Brillson, S. H. Xu, A. P. Young, G. J. Lapeyre, Mark Johnson, H. Cruguel, J. F. Schetzina
Publikováno v:
Journal of Electronic Materials. 28:308-313
Depth-dependent low energy cathodoluminescence spectroscopy (CLS) has been used to investigate the near-surface optical properties of n-type GaN epelayers grown under various growth conditions. Both bare and reacted-Mg/n-GaN and Al/n-GaN (annealed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c48e1db5780e902d30b4f998d94664f4
https://doi.org/10.1007/s11664-999-0032-z
https://doi.org/10.1007/s11664-999-0032-z
Publikováno v:
Rep. Prog. Phys. 76, 096001 (2013).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=erc_________::1e6abc0a4244575a38a400834e2cfd20
Publikováno v:
Applied Surface Science. :24-34
High-resolution electron energy-loss spectroscopy (HREELS) has been used in situ to investigate the space charge regime of homogeneously doped and delta-doped (Si) GaAs (100) samples, which were grown by molecular beam epitaxy (MBE). The simplest mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6457a484b4953e3330824a733051fb5
https://doi.org/10.1016/s0169-4332(96)00116-x
https://doi.org/10.1016/s0169-4332(96)00116-x