Zobrazeno 1 - 10
of 59
pro vyhledávání: '"G. J. Jan"'
Publikováno v:
Journal of Applied Physics. 84:1595-1601
InGaAs/GaAs (111)B quantum well p-i-n structures grown by gas source molecular beam epitaxy have been investigated with a photoreflectance technique. Using the reduced mass deduced from experiments, the built-in electric field is obtained from the ab
Publikováno v:
Journal of Applied Physics. 78:4035-4038
Photoreflectance(PR) spectra of the graded InAlAs/InGaAs heterojunction bipolar transistor layers were investigated at various temperatures between 8 K and 300 K. The energy features of the PR spectra were fitted and identified as band‐to‐band tr
Autor:
Y. H. Chen, G. J. Jan
Publikováno v:
Journal of Applied Physics. 77:6681-6685
InAlAs/InGaAs heterojunction bipolar transistor with a 300 A spacer inserted between emitter and base grown by molecular beam epitaxy was characterized by using photoreflectance spectroscopy. The energy features observed above the InGaAs fundamental
Publikováno v:
Applied Physics Letters. 82:3895-3897
Temperature dependent photoreflectance (PR) and photoluminescence experiments of the InAs/GaAs quantum dot (QD) structures were performed. At 20 K, effective band-gap transitions due to the InAs QDs, wetting layers, and GaAs buffer and cap layers wer
Publikováno v:
Review of Scientific Instruments. 65:2548-2555
A special theoretical concept involving the harmonic magnetic‐field measurement and analysis method using a fixed angle Hall probe was developed at the Synchrotron Radiation Research Center (SRRC) for measuring as well as analyzing the triple bendi
Publikováno v:
Applied Physics Letters. 81:2082-2084
We have used the bootstrap methodology to analyze dot size distributions of ZnTe quantum dot (QD) structures. The photoluminescence (PL) spectrum indicates that the ZnTe QD structure belongs to a type-II band alignment. The broadness with small fluct
Autor:
Johnson Lee, P.K. Tseng, G. J. Jan, Chunyan Liu, K.T. Hsu, Boris S. Elman, I.F. Chang, Emil S. Koteles
Publikováno v:
Solid State Communications. 76:1229-1233
The photoreflectance spectra of quantum well structures at room temperature measured with s-polarized or p-polarized light at oblique incidence have been theoretically and experimentally investigated. The line shapes of the spectra were constructed u
Publikováno v:
Applied Physics Letters. 72:1208-1210
Strained-layer (111)B In0.2Ga0.8As/GaAs p-i-n quantum well structures grown with exciton transitions well resolved at room temperature have been studied by photoreflectance spectroscopy. Using the reduced mass deduced from experiments, the built-in e
Autor:
G. J. Janssen, P. Eschenbach, P. Kurle, B. E. Bode, J. Neugebauer, H. J. M. de Groot, J. Matysik, A. Alia
Publikováno v:
Magnetic Resonance, Vol 1, Pp 261-274 (2020)
The electron donor in photosystem I (PSI), the chlorophyll dimer P700, is studied by photochemically induced dynamic nuclear polarization (photo-CIDNP) magic angle spinning (MAS) nuclear magnetic resonance (NMR) on selectively 13C and uniformly 15N l
Externí odkaz:
https://doaj.org/article/538bc95daf1946228df5c49c96a476ea
Publikováno v:
Applied Physics Letters. 66:2697-2699
The photoreflectance (PR) spectroscopic technique has been used to investigate the microstructures of the graded InAlAs/InGaAs heterojunction bipolar transistor at room temperature. The energy features of the PR spectrum were fitted and identified as