Zobrazeno 1 - 10
of 28
pro vyhledávání: '"G. J. Hamhuis"'
Autor:
Alexander O. Govorov, PM Paul Koenraad, R Richard Nötzel, G. J. Hamhuis, A. Yu. Silov, N. A. J. M. Kleemans, JG Joris Keizer, J. van Bree
Publikováno v:
Nature Physics, 6(7), 534-538. Nature Publishing Group
Many-body interactions give rise to fascinating physics such as the X-ray Fermi-edge singularity in metals, the Kondo effect in the resistance of metals with magnetic impurities and the fractional quantum Hall effect. Here we report the observation o
Publikováno v:
Materials Science in Semiconductor Processing, 12(1-2), 40-43. Elsevier
Self-organized anisotropic strain engineering is combined with growth on artificially patterned GaAs (3 1 1)B substrates to realize complex lateral ordering of InGaAs and InAs quantum dots (QDs) guided by steps and facets generated along the pattern
Publikováno v:
Journal of Applied Physics, 102(9):094301, 094301-1/5. American Institute of Physics
Self-organized anisotropic strain engineering guided on shallow- and deep-patterned GaAs (311)B substrates is exploited for formation of complex laterally ordered architectures of connected InGaAs quantum dot (QD) arrays and isolated InAs QD groups b
Publikováno v:
Proceedings of the 13th International Conference on Molecular Beam Epitaxy (MBE 2004), 22-27 August 2004, Edinburgh, U.K., 88-93
STARTPAGE=88;ENDPAGE=93;TITLE=Proceedings of the 13th International Conference on Molecular Beam Epitaxy (MBE 2004), 22-27 August 2004, Edinburgh, U.K.
STARTPAGE=88;ENDPAGE=93;TITLE=Proceedings of the 13th International Conference on Molecular Beam Epitaxy (MBE 2004), 22-27 August 2004, Edinburgh, U.K.
Lateral InAs quantum dot (QD) molecules are created by self-organized anisotropic strain engineering of a (In,Ga)As/GaAs superlattice (SL) template on GaAs (3 1 1)B by molecular beam epitaxy. During stacking the SL template self-organizes into a two-
Publikováno v:
Journal of Applied Physics, 97(4):044301, 044301-1/6. American Institute of Physics
An ordered lattice of lateral InAs quantum dot (QD) molecules is created by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs superlattice (SL) template on GaAs(311)B by molecular-beam epitaxy, constituting a Turing pattern in solid
Publikováno v:
Physica E: Low-Dimensional Systems & Nanostructures, 21(2-4), 568-572. Elsevier
Well-defined one-dimensional single (In,Ga)As quantum dot (QD) arrays have been successfully formed on planar singular GaAs (1 0 0) in molecular beam epitaxy by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs quantum wire (QWR) sup
Publikováno v:
Journal of Applied Physics, 95(1), 109-114. American Institute of Physics
Single (In,Ga)As quantum dot (QD) arrays are formed on GaAs (100) substrates by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs quantum wire (QWR) superlattice (SL) template in molecular beam epitaxy. The crucial steps in QWR templ
Publikováno v:
Journal of Crystal Growth, 251(1-4), 264-268. Elsevier
We investigate the role of In desorption for (In,Ga)As self-organized quantum wire (QWR) formation on GaAs (1 0 0) based on elongated island formation, annealing, and stacking in (In,Ga)As/GaAs superlattice growth. We observe well-defined QWR formati
Autor:
R Richard Nötzel, PM Paul Koenraad, Peter Offermans, G. J. Hamhuis, TJ Tom Eijkemans, J. He, JH Joachim Wolter, Qian Gong
Publikováno v:
Applied Physics Letters, 85(14), 2771-2773. American Institute of Physics
Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of t
Publikováno v:
Applied Physics Letters, 81(10), 1887-1889. American Institute of Physics
We report on an approach to improve the uniformity of a single layer of (In,Ga)As quantum dots (QDs) grown by molecular-beam epitaxy. The key concept of our approach is to level and rebuild the (In,Ga)As QDs during insertion of a short period GaAs/In