Zobrazeno 1 - 10
of 208
pro vyhledávání: '"G. J. Hamhuis"'
Autor:
Alexander O. Govorov, PM Paul Koenraad, R Richard Nötzel, G. J. Hamhuis, A. Yu. Silov, N. A. J. M. Kleemans, JG Joris Keizer, J. van Bree
Publikováno v:
Nature Physics, 6(7), 534-538. Nature Publishing Group
Many-body interactions give rise to fascinating physics such as the X-ray Fermi-edge singularity in metals, the Kondo effect in the resistance of metals with magnetic impurities and the fractional quantum Hall effect. Here we report the observation o
Publikováno v:
Materials Science in Semiconductor Processing, 12(1-2), 40-43. Elsevier
Self-organized anisotropic strain engineering is combined with growth on artificially patterned GaAs (3 1 1)B substrates to realize complex lateral ordering of InGaAs and InAs quantum dots (QDs) guided by steps and facets generated along the pattern
Publikováno v:
Journal of Applied Physics, 102(9):094301, 094301-1/5. American Institute of Physics
Self-organized anisotropic strain engineering guided on shallow- and deep-patterned GaAs (311)B substrates is exploited for formation of complex laterally ordered architectures of connected InGaAs quantum dot (QD) arrays and isolated InAs QD groups b
Publikováno v:
Proceedings of the 13th International Conference on Molecular Beam Epitaxy (MBE 2004), 22-27 August 2004, Edinburgh, U.K., 88-93
STARTPAGE=88;ENDPAGE=93;TITLE=Proceedings of the 13th International Conference on Molecular Beam Epitaxy (MBE 2004), 22-27 August 2004, Edinburgh, U.K.
STARTPAGE=88;ENDPAGE=93;TITLE=Proceedings of the 13th International Conference on Molecular Beam Epitaxy (MBE 2004), 22-27 August 2004, Edinburgh, U.K.
Lateral InAs quantum dot (QD) molecules are created by self-organized anisotropic strain engineering of a (In,Ga)As/GaAs superlattice (SL) template on GaAs (3 1 1)B by molecular beam epitaxy. During stacking the SL template self-organizes into a two-
Publikováno v:
Journal of Applied Physics, 97(4):044301, 044301-1/6. American Institute of Physics
An ordered lattice of lateral InAs quantum dot (QD) molecules is created by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs superlattice (SL) template on GaAs(311)B by molecular-beam epitaxy, constituting a Turing pattern in solid
Publikováno v:
Physica E: Low-Dimensional Systems & Nanostructures, 21(2-4), 568-572. Elsevier
Well-defined one-dimensional single (In,Ga)As quantum dot (QD) arrays have been successfully formed on planar singular GaAs (1 0 0) in molecular beam epitaxy by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs quantum wire (QWR) sup
Publikováno v:
Journal of Applied Physics, 95(1), 109-114. American Institute of Physics
Single (In,Ga)As quantum dot (QD) arrays are formed on GaAs (100) substrates by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs quantum wire (QWR) superlattice (SL) template in molecular beam epitaxy. The crucial steps in QWR templ
Autor:
G. J. Hamhuis, S. Jahanmiri Nejad, R Richard Nötzel, Andrea Fiore, D. Bitauld, Dondu Sahin, Francesco Mattioli, Alessandro Gaggero, Francesco Marsili, R. Sanjines, Roberto Leoni
Publikováno v:
2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
CLEO/Europe and EQEC 2011 Conference Digest, OSA Technical Digest (CD) Optical Society of America, 2011
info:cnr-pdr/source/autori:S. Jahanmiri Nejad, A. Gaggero, F. Marsili, F. Mattioli, R. Leoni, D. Bitauld, D. Sahin, G. J. Hamhuis, R. Nötzel, R. Sanjines, A. Fiore/congresso_nome:CLEO%2FEurope and EQEC 2011 Conference Digest, OSA Technical Digest (CD) Optical Society of America/congresso_luogo:/congresso_data:2011/anno:2011/pagina_da:/pagina_a:/intervallo_pagine
CLEO/Europe and EQEC 2011 Conference Digest, OSA Technical Digest (CD) Optical Society of America, 2011
info:cnr-pdr/source/autori:S. Jahanmiri Nejad, A. Gaggero, F. Marsili, F. Mattioli, R. Leoni, D. Bitauld, D. Sahin, G. J. Hamhuis, R. Nötzel, R. Sanjines, A. Fiore/congresso_nome:CLEO%2FEurope and EQEC 2011 Conference Digest, OSA Technical Digest (CD) Optical Society of America/congresso_luogo:/congresso_data:2011/anno:2011/pagina_da:/pagina_a:/intervallo_pagine
Nanowire superconducting single photon detectors (SSPDs) are superior detectors of choice for many applications particularly in quantum information and communication technology. SSPD's excellent sensitivity and time resolution are brought about by th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbcd9c02b67c24e8ab8c9aa7a81c7f9a
https://research.tue.nl/nl/publications/ea129449-a14d-4483-b53a-b9a43eaa9696
https://research.tue.nl/nl/publications/ea129449-a14d-4483-b53a-b9a43eaa9696
Publikováno v:
Journal of Crystal Growth, 251(1-4), 264-268. Elsevier
We investigate the role of In desorption for (In,Ga)As self-organized quantum wire (QWR) formation on GaAs (1 0 0) based on elongated island formation, annealing, and stacking in (In,Ga)As/GaAs superlattice growth. We observe well-defined QWR formati
Autor:
R Richard Nötzel, PM Paul Koenraad, Peter Offermans, G. J. Hamhuis, TJ Tom Eijkemans, J. He, JH Joachim Wolter, Qian Gong
Publikováno v:
Applied Physics Letters, 85(14), 2771-2773. American Institute of Physics
Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of t