Zobrazeno 1 - 10
of 19
pro vyhledávání: '"G. J. Campisi"'
Autor:
J.T. Nee, J.U. Yoon, George A. Brown, J.E. Chung, J.-H.Y. Krska, G. J. Campisi, Peter Roitman
Publikováno v:
IEEE Transactions on Electron Devices. 43:1956-1964
A new model for SIMOX buried-oxide (BOX) high-field conduction which incorporates the role of silicon islands and BOX nonstoichiometry is presented. For single-implant SIMOX BOX high-field conduction, the onset E-field for both positive and negative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5cc258acfd0f07c74b23683fbbd91fd
https://doi.org/10.1109/16.543033
https://doi.org/10.1109/16.543033
Publikováno v:
IEEE Transactions on Nuclear Science. 39:2086-2097
Shallow electron and deep hole trapping in the buried oxides of SIMOX (separation by implantation of oxygen), ZMR, and BESOI (bond and etchback silicon-on-insulator) material are examined. By irradiating the oxides with X-rays at cryogenic temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40cb8f4741b65db3ebc76beee28a48fa
https://doi.org/10.1109/23.211407
https://doi.org/10.1109/23.211407
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1006-1011
The strain distributions of various silicon‐on‐insulator (SOI) wafers were studied using Bragg reflection mode double crystal topography analysis. These SOI samples included the separation by implanted oxygen (SIMOX), the zone melt recrystallizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1abb3e378c694b1086c9c1ec5418246
https://doi.org/10.1116/1.578194
https://doi.org/10.1116/1.578194
Publikováno v:
Journal of Electronic Materials. 21:683-687
Radiation-induced charge build-up in the buried oxide (BOX) of SOI MOSFETs affects device performance through threshold voltage shifts of the back channel. This charge build-up is related to the electric field in the BOX during irradiation. In this p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac456175fcd8e704b03ac4b4353f215e
https://doi.org/10.1007/bf02655596
https://doi.org/10.1007/bf02655596
Publikováno v:
Materials Science and Engineering: B. 12:191-194
A pseudo-metal/oxide/semiconductor transistor can be operated in situ in as-grown silicon on insulator materials. The measurement set-up and typical transistor characteristics are discussed. Methods are proposed to extract the basic parameters of min
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdfa06dc4044f5bd6960955678e43dcc
https://doi.org/10.1016/0921-5107(92)90284-g
https://doi.org/10.1016/0921-5107(92)90284-g
Publikováno v:
Journal of Applied Physics. 70:4584-4592
Separation by implanted oxygen is recognized as a versatile technology to produce silicon‐on‐insulator substrates. The lateral isolation of device islands is achieved by subsequent local oxidation or mesa etching of the silicon top layer. In an a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d03a7ac862a5706c0687116624890ce4
https://doi.org/10.1063/1.349095
https://doi.org/10.1063/1.349095
Publikováno v:
Journal of Vacuum Science and Technology. 16:13-19
Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3974834946155ded57b879b06a828cdb
https://doi.org/10.1116/1.569860
https://doi.org/10.1116/1.569860
Publikováno v:
Journal of Applied Physics. 52:5043-5049
Heteroepitaxial silicon was grown on polycrystalline MoSi2 by electron beam evaporation at 800 °C in an ultrahigh vacuum. The silicon films with a thickness between 2 and 12 μm grew with either an (111) or (233) orientation. The growth and morpholo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e99d51260d5e5ac2d941edde5b0d7226
https://doi.org/10.1063/1.329447
https://doi.org/10.1063/1.329447
Publikováno v:
Review of Scientific Instruments. 58:301-304
The device reported here allows the researcher the opportunity of gaining primitive yield information, threshold voltages, emission stability, and other information, e.g., gas effects, on field emitter arrays (FEA) which are microminiature ‘‘vacu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8445da00d3511ae2d73b1230a847f28a
https://doi.org/10.1063/1.1139275
https://doi.org/10.1063/1.1139275
Publikováno v:
Journal of Applied Physics. 52:6647-6650
Schottky barrier diodes of yttrium and yttrium silicide were fabricated on p‐type (111) silicon. The barrier heights of the diodes determined by I‐V measurements were correlated with heat treatments and interface conditions as determined by Auger
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b469fae8a5098203d2e675c41bf7e6a5
https://doi.org/10.1063/1.328656
https://doi.org/10.1063/1.328656