Zobrazeno 1 - 10
of 13
pro vyhledávání: '"G. Imthurn"'
Publikováno v:
IEEE Transactions on Electron Devices. 58:3787-3792
The off-state source-to-drain leakage current and punchthrough voltage are the quantities that frequently limit the performance of short-channel floating-body silicon-on-sapphire (SOS) n-channel MOSFETs. In this paper, we demonstrate that the high-te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9dd9355f9a9de14f26038f17e32a58b
https://doi.org/10.1109/ted.2011.2168401
https://doi.org/10.1109/ted.2011.2168401
Autor:
N. Kistler, Karl Bertling, Aleksandar D. Rakić, M. Stuber, Tran Ho, H. Domyo, G. Imthurn, Yew-Tong Yeow
Publikováno v:
IEEE Electron Device Letters. 29:325-327
The density and the electrical nature of the interface traps at the silicon-sapphire interface of silicon-on-sapphire (SOS) MOSFETs have a significant influence on the electrical characteristics of these transistors. This letter describes a simple MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::937b74fb0c97379c05918fd1610c705b
https://doi.org/10.1109/led.2008.918263
https://doi.org/10.1109/led.2008.918263
Autor:
C. E. Chang, G.A. Garcia, Peter M. Asbeck, G. Imthurn, B. Offord, R. Johnson, I. Lagnado, P.R. de la Houssaye
Publikováno v:
IEEE Electron Device Letters. 16:289-292
Microwave characteristics of n and p-MOS transistors fabricated in thin film (50 and 100 nm) silicon-on-sapphire with T-gate lengths drawn at 0.5 and 0.7 /spl mu/m are reported. The observed f/sub max/ was as high as 32 GHz for a n-MOS 0.7 /spl mu/m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24d338c3dbc0101d071dfe8d21c6b5c4
https://doi.org/10.1109/55.790738
https://doi.org/10.1109/55.790738
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
Microwave characteristics are reported for n- and p- MOS transistors fabricated with thin-film Silicon-on-Sapphire technology. The gates were defined with I-line optical lithography, and ranged down to 0.5 /spl mu/m (drawn dimension). The f/sub t/ va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35660dd36012d18ca338425fbded1b5f
https://doi.org/10.1109/mwsym.1994.335418
https://doi.org/10.1109/mwsym.1994.335418
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2954
n‐Channel metal–oxide–semiconductor field‐effect transistors with gate lengths ranging from 10–0.2 μm were fabricated for the first time on device quality 300–500 A ultrathin silicon on sapphire (SOS) wafers using electron‐beam exposur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1782f9873523e7c0a0a6cbf3baab5091
https://doi.org/10.1116/1.585950
https://doi.org/10.1116/1.585950
Autor:
G. Imthurn, F. Hanson
The authors report efficient pulse operation of an Nd:glass slab laser-side-pumped by laser diode arrays. 7.5 mJ output and a slope efficiency of 29% were obtained with 35 nJ pump energy at 0.8 mu m in 200 mu s pulses. The wide absorption band at 0.8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f80a954f0f92f6acc509a927573c48e
https://zenodo.org/record/1261833
https://zenodo.org/record/1261833
Autor:
Karl Bertling, Aleksandar D. Rakić, G. Imthurn, Tran Ho, N. Kistler, Yew-Tong Yeow, M. Stuber, H. Domyo
Publikováno v:
ResearcherID
MOS capacitor C-V measurement is a standard tool for investigating the electrical properties of a wafer. This paper investigates the use of a novel MOS capacitor structure for use with thin film silicon-on-sapphire wafers in order to determine backs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ae6a1643fbf6e54589a43a728a13113
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000269314800032&KeyUID=WOS:000269314800032
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000269314800032&KeyUID=WOS:000269314800032
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