Zobrazeno 1 - 10
of 31
pro vyhledávání: '"G. I. Zebrev"'
Autor:
G. I. Zebrev, D. S. Malich
Publikováno v:
IEEE Transactions on Electron Devices. 70:1574-1579
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdc674a4ffa89be3ae365c4865a83533
https://doi.org/10.1109/ted.2023.3245571
https://doi.org/10.1109/ted.2023.3245571
Autor:
G. I. Zebrev, Boris V. Vasilegin, Vladimir V. Emeliyanov, Andrey A. Antonov, P. N. Osipenko, Alexander I. Chumakov, Alexander V. Klishin, Pavel S. Dolotov, Alexander I. Ozerov, Alexey L. Vasiliev, Andrey V. Yanenko, Maxim S. Gorbunov, Vasily S. Anashin
Publikováno v:
IEEE Transactions on Nuclear Science. 60:2762-2767
The design and experimental results are presented for the fault-tolerant 0.35 im SOI CMOS microprocessor. DICE-like cells are shown to be vulnerable to SEU during “read” and “write” modes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::890d2d2dc5b935f419865b2763719f1d
https://doi.org/10.1109/tns.2013.2241453
https://doi.org/10.1109/tns.2013.2241453
Publikováno v:
IEEE Transactions on Electron Devices. 60:1799-1806
An analytical model of the small-signal current and capacitance characteristics of radio frequency graphene field-effect transistors (GFETs) is presented. The model is based on explicit distributions of chemical potential in graphene channels (includ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feb67292f2bb24fd78182c5fb96341b9
https://doi.org/10.1109/ted.2013.2257793
https://doi.org/10.1109/ted.2013.2257793
We study impact of the near-interfacial oxide traps on the C-V and I-V characteristics of graphene gated structures. Methods of extraction of interface trap level density in graphene field effect devices from the capacitance-voltage measurements are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b292f44864c84ec02e14d53c19e614ba
https://doi.org/10.1201/b19460-13
https://doi.org/10.1201/b19460-13
Publikováno v:
IEEE Transactions on Nuclear Science. 58:785-792
Physical model of TID effects is embedded into BSIM3v3 model implemented using Verilog-A. Radiation-induced mismatch enhancement due to the combined action of technology variations and electrical bias difference is demonstrated by simulation. It is s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f81ede90c555a5918b122d41f18bff9f
https://doi.org/10.1109/tns.2010.2104162
https://doi.org/10.1109/tns.2010.2104162
Autor:
G. I. Zebrev, Maxim S. Gorbunov
Publikováno v:
IEEE Transactions on Nuclear Science. 56:2230-2236
A procedure of SPICE parameters extraction for radiation-induced equivalent lumped parasitic transistor is proposed. Comparison of radiation-induced leakage current in test MOSFETs between total dose irradiation experiments and simulation results exh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc41516865cfbed9980962fd400faf00
https://doi.org/10.1109/tns.2009.2016096
https://doi.org/10.1109/tns.2009.2016096
Autor:
G. I. Zebrev
Publikováno v:
Russian Microelectronics. 35:177-184
A model is developed that yields a qualitative and a quantitative description of the enhanced low-dose-rate sensitivity of BJTs. This effect is shown to be attributable to tail-state recombination increasing with dose rate for thick isolating layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1044adcca4c1d7ca5e9638a64e2184cc
https://doi.org/10.1134/s1063739706030061
https://doi.org/10.1134/s1063739706030061
Autor:
G. I. Zebrev
Publikováno v:
Russian Microelectronics. 35:185-196
The mechanisms are analyzed of the action of neutrons on high-density CMOS circuit elements. A procedure is proposed for calculating the single-event-upset and single-hard-error cross sections of CMOS memory cells exposed to neutrons.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd571c83be49ebbd80e56fa75707987a
https://doi.org/10.1134/s1063739706030073
https://doi.org/10.1134/s1063739706030073