Zobrazeno 1 - 10
of 121
pro vyhledávání: '"G. I. Sproule"'
Autor:
George Thompson, Hiroki Habazaki, A. Suleiman, G. I. Sproule, T. Quance, S. Moisa, Félix Echeverría, M. J. Graham, Peter Skeldon
Publikováno v:
Corrosion Science. 52:595-601
Amorphous anodic oxide films on InAlP have been grown at high efficiency in sodium tungstate electrolyte. The films are shown to comprise an outer layer containing indium species, an intermediate layer containing indium and aluminium species and an i
Autor:
Peter Szakalos, Teodor Aastrup, Gunnar Hultquist, B. Danilov, Peter I. Dorogokupets, Jan Christer Eriksson, Anders Rosengren, Antoly B. Belonoshko, Gaik-Khuan Chuah, Gunnar Wikmark, G. I. Sproule, L. Gråsjö, M. J. Graham
Publikováno v:
Catalysis Letters. 132:311-316
According to a current concept, copper canisters of thickness 0.05 m will be safe for nuclear waste containment for 100,000 years. We show that more than 1 m copper thickness might be required for 100,000 years durability based on water exposures of
Autor:
Tcq Noakes, M. J. Graham, Paul Bailey, A. Suleiman, G.E. Thompson, Teruo Hashimoto, Félix Echeverría, Peter Skeldon, Hiroki Habazaki, G. I. Sproule, S. Moisa
Publikováno v:
Corrosion Science. 50:1353-1359
Anodizing of InSb at 5 mA cm−2 in sodium tungstate electrolyte is shown to produce barrier-type amorphous oxide at relatively low voltages, to about 40 V, and porous-type amorphous oxide at increased voltages. The barrier-type amorphous oxide, cons
Molecular beam epitaxy growth of the dilute nitride GaAs1−xNx with a helical resonator plasma source
Autor:
Raveen Kumaran, Daniel A. Beaton, E. Nodwell, Thomas Tiedje, J. A. Mackenzie, N. R. Zangenberg, G. I. Sproule, M. Adamcyk, Erin C. Young, Sebastien Tixier
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 25:850-856
Dilute nitride semiconductors of composition GaAs1−xNx (0.0017
Autor:
Xiaohua Wu, P. J. Barrios, M. J. Graham, Patrik Schmuki, Sebastian Kleber, A.J. SpringThorpe, Dolf Landheer, G. I. Sproule, S. Moisa
Publikováno v:
Corrosion Science. 49:31-41
This paper focuses on the characterization of anodic films (formed in aqueous electrolytes) and thermal oxides (formed at ∼500 °C) on GaAs, InP, AlGaAs, InAlAs, InAlP and heterostructures for GaAs- and InP-based devices. Emphasis is placed on Al-c
Publikováno v:
Journal of Crystal Growth. 291:86-93
GaInNAs(Sb)/GaNAs double quantum well (DQW) structures were grown on GaAs substrates using solid-source molecular beam epitaxy with N 2 /Ar gas mixtures in a radio frequency plasma cell. A novel method of in situ antimony mass spectrometry is introdu
Autor:
A. Banu, Lionel Santinacci, Thierry Djenizian, G. I. Sproule, S. Moisa, Xiaohua Wu, Patrik Schmuki, M. J. Graham, Dolf Landheer
Publikováno v:
Corrosion Science. 46:2067-2079
Anodic oxide films were galvanostatically grown on n-InSb(1 0 0) surfaces at various pH in sodium hydroxide (0.1 M NaOH, pH=13), borate buffer (0.075 M Na2B4O7 + 0.3 M H3BO3, pH=8.4) and phosphate buffer (0.3 M NH4H2PO4, pH=4.4). Thickness, compositi
Publikováno v:
physica status solidi (a). 197:180-185
Selective pore formation can be electrochemically initiated on n-type InP(100) on presensitized surfaces. To create this presensitization, defect patterns were written into the surface by focused ion beam (FIB) implantation of Si ++ . These implant s
Autor:
J. W. Fraser, X Wu, P. J. Barrios, D. Landheer, A.J. SpringThorpe, M. J. Graham, G. I. Sproule, S. Moisa, M. Extavour
Publikováno v:
Materials at High Temperatures. 20:277-280
Producing insulating layers on III–V semiconductors is crucial for a number of important device applications. Al-containing thermal oxides on AlGaAs and InAlAs have been found to possess good insulating characteristics and oxides on InAlP have rece
Autor:
S. B. Newcomb, J. Fraser, Peter Skeldon, M. J. Graham, G. I. Sproule, G.E. Thompson, S. Moisa, A. Pakes
Publikováno v:
Journal of Materials Science. 38:343-349
The anodic oxidation of n-type GaN (carrier concentration 4.6 × 1018 cm−3) under laboratory illumination at a constant current density of 5 mA cm−2 in sodium tungstate electrolyte is examined by high resolution microscopy and surface analysis. T