Zobrazeno 1 - 10
of 30
pro vyhledávání: '"G. I. Kotov"'
Publikováno v:
Physics of the Solid State. 61:2367-2370
Amorphous Li–Nb–O films were deposited onto Si substrates by radio-frequency magnetron sputtering method. The fabricated heterostructures demonstrated the presence of effective oxide charge Qeff having both negative and positive components. Therm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4691ee3084d1817f06fa3caf22e7f9f3
https://doi.org/10.1134/s1063783419120552
https://doi.org/10.1134/s1063783419120552
Autor:
V. M. Ievlev, G. I. Kotov, V. Dybov, S. V. Kannykin, D. Serikov, E. K. Belonogov, A. Kostyuchenko, M. Sumets
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:15662-15669
Li–Nb–O amorphous films were deposited onto Si substrates by the radio-frequency magnetron sputtering method in an Ar environment. As-grown films are crystallized under thermal annealing (TA) at the temperature of up to 600 °C with a formation o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e108e013947566dd74d2c69e7333f17a
https://doi.org/10.1007/s10854-019-01948-z
https://doi.org/10.1007/s10854-019-01948-z
Autor:
A. A. Samsonov, I. Ya. Mittova, B. V. Sladkopevtsev, E. V. Tomina, I. S. Shashkin, I. N. Arsentyev, G. I. Kotov, P. V. Kostenko
Publikováno v:
Semiconductors. 53:1054-1059
Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V2O5 and MnO2 nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83ebea3aa4aade1ba779ff30ce1ab046
https://doi.org/10.1134/s1063782619080177
https://doi.org/10.1134/s1063782619080177
Autor:
G. I. Kotov, V. N. Trushin, A. V. Zdoroveyshchev, P. B. Demina, A. V. Budanov, B. N. Zvonkov, Yu. N. Vlasov, M. V. Dorokhin
Publikováno v:
Technical Physics Letters. 45:235-238
Spin light-emitting diodes based on InGaAs/GaAs heterostructures with a CoPt ferromagnetic injector were fabricated. It was demonstrated that the processing of these structures in selenium vapor prior to the deposition of a CoPt contact provides an o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::711d095c55876b40e4098e143ec3aebd
https://doi.org/10.1134/s1063785019030064
https://doi.org/10.1134/s1063785019030064
Publikováno v:
Journal of Science: Advanced Materials and Devices
Journal of Science: Advanced Materials and Devices, Vol 5, Iss 2, Pp 256-262 (2020)
Journal of Science: Advanced Materials and Devices, Vol 5, Iss 2, Pp 256-262 (2020)
Li–Nb–O amorphous films were deposited onto Si substrates by the radio-frequency magnetron sputtering method in an Ar environment and an Ar(60%)+O2(40%) gas mixture. A positive effective fixed oxide charge Qeff having negative, -Qeff, and positiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a374bf17406c6ed8c93323600c26eb4f
http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85081663819
http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85081663819
Publikováno v:
Ceramics International. 44:15058-15064
Polycrystalline lithium niobate (LiNbO3) films were deposited onto Si substrates by radio-frequency magnetron sputtering method in an Ar environment and an Ar+O2 gas mixture. All as-grown films manifested ferroelectric properties with the remnant pol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2ed4b2308969bd409b2d1f11f2ad2e4
https://doi.org/10.1016/j.ceramint.2018.05.136
https://doi.org/10.1016/j.ceramint.2018.05.136
Publikováno v:
Crystallography Reports. 62:768-772
Thin Ga2Se3 layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoichiometric gallium vacancy ordering at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25099d808143f701b634ca4e1db3a5bc
https://doi.org/10.1134/s1063774517050121
https://doi.org/10.1134/s1063774517050121
Publikováno v:
Vestnik Voronežskogo Gosudarstvennogo Universiteta Inženernyh Tehnologij, Vol 79, Iss 2, Pp 101-106 (2017)
Development of the modern educational technologies caused by broad introduction of comput-er testing and development of distant forms of education does necessary revision of methods of an examination of pupils. In work it was shown, need transition t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb40c729895933323f56daedba50ab93
https://doi.org/10.20914/2310-1202-2017-2-101-106
https://doi.org/10.20914/2310-1202-2017-2-101-106
Publikováno v:
Vestnik Voronežskogo Gosudarstvennogo Universiteta Inženernyh Tehnologij, Vol 0, Iss 2, Pp 118-124 (2016)
Because of the difficulty of constructing rigorous mathematical models of technological, biomedical and economic facilities have been developed methods of forecasting based on statistical analysis. The complexity of the analyzed object is equivalent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::801299b701f17619b0ff12bf89d62d9e
https://www.vestnik-vsuet.ru/vguit/article/view/929
https://www.vestnik-vsuet.ru/vguit/article/view/929
Publikováno v:
Vestnik Voronežskogo Gosudarstvennogo Universiteta Inženernyh Tehnologij, Vol 0, Iss 1, Pp 57-62 (2016)
The main issue is to study the interaction between the system of road transport and security of its information systems. The mechanism of this interaction is studied only on the basis of studies of the learning process. These two interacting systems
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecfcba2a9efddc6d74d270cb7e3e1a30
https://www.vestnik-vsuet.ru/vguit/article/view/845
https://www.vestnik-vsuet.ru/vguit/article/view/845