Zobrazeno 1 - 10
of 12
pro vyhledávání: '"G. I. Isakov"'
Autor:
I. I. Bekbasarov, G. I. Isakov
Publikováno v:
Наука и техника, Vol 0, Iss 2, Pp 47-54 (2015)
The paper presents constructional and technological features for manufacturing driven piles with variable strength of pile shaft. Economical efficiency of their production has been shown in the paper. The paper provides a pile cap design that ensures
Externí odkaz:
https://doaj.org/article/0f10d411b948433fbb511b4f580ddb79
Autor:
G. I. Isakov, B. A. Najafov
Publikováno v:
Inorganic Materials. 46:624-630
We report the optical and electrical properties of a-Si:H and a-Si1 − xCx:H (x = 0.06, 0.17, 0.25,0.32) amorphous films produced by plasma deposition at constant hydrogen content. IR absorption data are used to evaluate the density of Si-H and C-H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e76be4ba1af19ebca4390c360b241a7
https://doi.org/10.1134/s0020168510060129
https://doi.org/10.1134/s0020168510060129
Autor:
B. A. Najafov, G. I. Isakov
Publikováno v:
Inorganic Materials. 45:711-716
Plasma deposition has been used to grow Si1−xGex:H(x= 0 − 1) films, undoped and doped with PH3 or B2H6, for p-i-n solar cells and other optoelectronic applications. The optical, electrical, and photoelectric properties of the films have been stud
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::954fafbebf08daaeed144a12e7d82f5a
https://doi.org/10.1134/s0020168509070012
https://doi.org/10.1134/s0020168509070012
Autor:
G. I. Isakov
Publikováno v:
Semiconductors. 39:738-741
The thermoelectric power and thermal conductivity of a GaSb-V2Ga5 eutectic composition are studied. A characteristic feature of this composition is the formation of a V2Ga5 metal phase in the form of parallel whiskers in the GaSb semiconductor matrix
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a98ea99d8cc8d0c9455f582eb244f14c
https://doi.org/10.1134/1.1992625
https://doi.org/10.1134/1.1992625
Autor:
G. I. Isakov, B. A. Najafov
Publikováno v:
Inorganic Materials. 41:685-689
Amorphous Si0.60Ge0.40:Hx films containing 1.7, 3.9, 7.1, 12.1, and 17.3 at % H are prepared by magnetron sputtering at different hydrogen partial pressures, and their electrical conductivity is measured from 80 to 350 K. The conductivity of the film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e9a48be0d9ad04831e9a34fa0303eee
https://doi.org/10.1007/s10789-005-0191-0
https://doi.org/10.1007/s10789-005-0191-0
Autor:
G. I. Isakov, B. A. Nadzhafov
Publikováno v:
Journal of Applied Spectroscopy. 72:396-402
The IR absorption spectra of hydrogenated amorphous films of an a-Si0.60Ge0.40:H solid solution that were obtained by plasmachemical deposition at different partial pressures of hydrogen $$P_{H_2 }$$ have been investigated. The oscillator strengths
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca17e9ca85d0505c04a0a19b3cd8ccc3
https://doi.org/10.1007/s10812-005-0088-3
https://doi.org/10.1007/s10812-005-0088-3
Autor:
G. I. Isakov
Publikováno v:
Journal of Experimental and Theoretical Physics. 99:792-800
Experimental data on the conduction of heterogeneous systems have been traditionally interpreted in the context of the theory of percolation phenomena taking into account the relative threshold volume fraction ηC ≈ 0.16) of the high-conductivity p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6ea15ff930f8f6135c0530abd4dab9b
https://doi.org/10.1134/1.1826171
https://doi.org/10.1134/1.1826171
Autor:
G. I. Isakov
Publikováno v:
Journal of Engineering Physics and Thermophysics. 77:1062-1068
The kinetic effects -- electric conductivity, thermal emf, and thermal conductivity -- were studied at different angles between the directions of electric current, heat flux, and metal microwhiskers in semiconductor–metal eutectic composites where,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6af092dabf2c15f5fd8bc62aa92df282
https://doi.org/10.1023/b:joep.0000049551.56378.4f
https://doi.org/10.1023/b:joep.0000049551.56378.4f
Autor:
G. I. Isakov
Publikováno v:
Inorganic Materials. 39:568-575
Experimental evidence is presented that semiconductor–metal eutectics with a low content of the metallic phase (4 vol %) are similar in electronic structure to inhomogeneous semiconductors. The microstructure of undoped and Te-doped GaSb–V2Ga5 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f68244ce2bfb96f27cf50b403f19f1ba
https://doi.org/10.1023/a:1024088817440
https://doi.org/10.1023/a:1024088817440
Publikováno v:
Turkish Journal of Physics. 20:1294-1298
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdb1248b8e8b72c4776085b9134f9e45
https://doi.org/10.55730/1300-0101.2624
https://doi.org/10.55730/1300-0101.2624