Zobrazeno 1 - 10
of 19
pro vyhledávání: '"G. I. Ayzenshtat"'
Publikováno v:
Russian Physics Journal. 61:2159-2166
The results of studies of the characteristics of contacts with Schottky barriers on a pseudomorphic AlGaAs/InGaAs heterostructure are presented. The Ti-based Schottky diodes were created by a standard pHEMT technology. It is shown that the parameters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c284c3d815ab34ee6559659621b8be41
https://doi.org/10.1007/s11182-019-01652-9
https://doi.org/10.1007/s11182-019-01652-9
Autor:
O. B. Koretskaya, M.A. Lelekov, S. A. Gorokhov, O.P. Tolbanov, Y. V. Osipov, G. I. Ayzenshtat, M. K. Polkovnikov, S. N. Golovnya, V. V. Parakhin, V. A. Novikov, A. V. Tyazhev, D. V. Borodin, A.P. Vorobiev
Publikováno v:
Biomedical engineering. 2013. Vol. 46, № 5. P. 194-198
A matrix gallium-arsenide detector for roentgenography and nondestructive monitoring is described in this work. The detector contains 128 × 128 sensitive elements with 50-μm pitch, an analog multiplexor, and a system for information acquisition. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cafd6f1c3628ad62e16cb924216c769
https://doi.org/10.1007/s10527-013-9302-4
https://doi.org/10.1007/s10527-013-9302-4
Publikováno v:
Russian Physics Journal. 53:914-919
The dependence of the average electron-drift velocity on the electric field strength is measured for a twodimensional electron gas in a quantum well of an AlGaAs/InGaAs heterostructure in the temperature range 200–400 K. It is shown that the satura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b3d15c8ae5bee37fe0e6b29b5939037
https://doi.org/10.1007/s11182-011-9510-x
https://doi.org/10.1007/s11182-011-9510-x
Autor:
D. Yu. Mokeev, G. I. Ayzenshtat, A. V. Tyazhev, Evgeny Syresin, D. L. Budnitskii, G Shelkov, O. P. Tolbanov, V. A. Novikov
Publikováno v:
Russian Physics Journal. 51:1037-1052
The progress in nanotechnologies has been largely due to the advent of a new generation of gamma-ray sources and position detectors, which can ensure both coordinate and temporal measurements within the nanoand femtoranges. The paper offers scientifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5adaa17798b550c947cb6fe6af894a3e
https://doi.org/10.1007/s11182-009-9141-7
https://doi.org/10.1007/s11182-009-9141-7
Publikováno v:
Russian Physics Journal. 51:897-901
It is proposed to use chromium-compensated semi-insulating GaAs detectors for detecting high-power nanosecond X-ray pulses. An X-ray facility based on a small direct-acting electron accelerator “Sinus-150” developed at the Institute of High-Curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c52b625e4c262b4549fa891181b58c26
https://doi.org/10.1007/s11182-009-9139-1
https://doi.org/10.1007/s11182-009-9139-1
Publikováno v:
Semiconductors. 42:443-447
The influence of capture effects on the characteristics of detectors of the ionizing radiation based on semi-insulating gallium arsenide is considered. Generation of nonequilibrium electrons and holes along the entire thickness of the active region w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5200ab04725523ec26ddbc08c84d4c6
https://doi.org/10.1134/s106378260804012x
https://doi.org/10.1134/s106378260804012x
Publikováno v:
Semiconductors. 41:612-615
It is shown that, in spite of the linearity of current-voltage characteristics of ionizing-radiation detectors based on semi-insulating GaAs compensated with Cr, the charge transport in these detectors is controlled by the barrier contacts at the ano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::383282cdcf2492f55fca250e305abeac
https://doi.org/10.1134/s1063782607050235
https://doi.org/10.1134/s1063782607050235
Autor:
E. P. Drugova, M. A. Lelekov, V. A. Chubirko, O. P. Tolbanov, D. Yu. Mokeev, M. D. Vilisova, I. V. Ponomarev, L.P. Porokhovnichenko, G. I. Ayzenshtat
Publikováno v:
Technical Physics. 51:1008-1011
Two types of photovoltaic X-ray detectors based on intrinsic and chromium-compensated epitaxial gallium arsenide are studied. The amplitude spectra taken with different radioactive sources show that the efficiency of charge collection in these detect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cae211f2323e31a9ccbaf79d4468597
https://doi.org/10.1134/s1063784206080093
https://doi.org/10.1134/s1063784206080093
Autor:
G. I. Ayzenshtat, A. Yu. Yushchenko
Publikováno v:
Instruments and experimental techniques. 2015. Vol. 58, № 2. P. 107-110
It was determined that the forward loss resistance as a function of the radius of the active region of typical microwave p-i-n diodes depends on the ratio of the square of the ambipolar-diffusion length to the square of the radius of the diode active
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7c2d5398a5684abc8d08e1a2e9ff12e
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000582409
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000582409
Publikováno v:
Russian physics journal. 2015. Vol. 57, № 12. P. 1627-1633
The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a transient process occurs in two stages resulting in a complicated pulse shape during the diode sw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::149dd5849dcfb9d2917e7fbab7a2da55
https://openrepository.ru/article?id=791715
https://openrepository.ru/article?id=791715