Zobrazeno 1 - 10
of 56
pro vyhledávání: '"G. Hema Chandra"'
Autor:
L. Kungumadevi, G. Hema Chandra
Publikováno v:
Chemical Physics Impact, Vol 9, Iss , Pp 100736- (2024)
Nanocrystalline PbTe and Ag & Sb co-doped PbTe thin films are prepared using an integrated physical-chemical approach by evaporating chemically synthesized PbTe and Ag & Sb co-doped PbTe nanopowders on glass substrates. The X-Ray Diffractogram (XRD)
Externí odkaz:
https://doaj.org/article/d58f5801e9344a5c89e6c9fcb2489f58
Autor:
Shaik Babujani, Bandi Srinivas, G. Hema Chandra, Y. P. Venkata Subbaiah, Mukul Gupta, R. Prasada Rao
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:2699-2715
Publikováno v:
Optical Materials. 135:113289
Publikováno v:
Applied Physics A. 127
In this work, we adopted a rapid thermal processing (RTP) for selenization and studied the influence of selenization time on vacuum evaporated multi-stacked precursor’s to form Ag2ZnSnSe4 (AZTSe) thin films. The RTP selenization temperature, pre-an
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:424-431
Nanocrystalline PbTe100−xSex thin films are prepared using an integrated physical–chemical approach by evaporating chemically synthesized PbTe nanopowders on glass substrates. All the deposited films exhibiting the face centered cubic structure w
Autor:
Mukul Gupta, Y.P. Venkata Subbaiah, M. Anantha Sunil, R. Prasada Rao, Dipak Ramdas Nagapure, G. Hema Chandra, Rhishikesh Mahadev Patil
Publikováno v:
Materials Science in Semiconductor Processing. 87:77-85
The incorporation of germanium into Cu2ZnSn(S,Se)4 thin films is gaining a massive attention because of its potential to tailor the properties of kesterite absorbers resulting in high efficiency solar photovoltaic devices. The present work reports th
Autor:
P. Prathap, M. Raghavender, G. Hema Chandra, M. Gurubhaskar, Y.P. Venkata Subbaiah, Narayana Thota
Publikováno v:
Vacuum. 155:318-324
SnS thin films were prepared using a simple two-stage process. The two-stage process involved in sputtering of Sn over glass substrate followed by sulfurization of sputtered Sn at 350 °C. The sulfurization process was carried out in the ambience of
Autor:
Mukul Gupta, G. Hema Chandra, Y.P. Venkata Subbaiah, G. Swapna Mary, M. Anantha Sunil, R. Prasada Rao
Publikováno v:
Superlattices and Microstructures. 117:437-448
Six possible multiple stacks of Cu-ZnSe-Ge with selenium incorporation at a precursor stage were prepared using electron beam evaporation followed by vacuum selenization at 475 °C for 30 min to investigate the role of stacking order on the growth an
Publikováno v:
Optik. 248:168203
In this work a facile two-step process, comprising of e-beam evaporated precursor deposition of (In/Cu/Ag/Se)× 3 multi-stack over substrate followed by additional selenization treatment, has been used to grow high-quality Cu0.5Ag0.5InSe2 (CAISe) fil
Autor:
R. Prasada Rao, Mukul Gupta, G. Hema Chandra, Y.P. Venkata Subbaiah, Rhishikesh Mahadev Patil
Publikováno v:
Journal of Physics and Chemistry of Solids. 154:110067
In this study, we demonstrate the pre-annealing treatment of stacked precursors at 250 °C for different durations (5, 10, 15, 20, 30, and 60 min), subsequently selenized at 400 °C for 1 min and correlate its effects on structural, morphological, an