Zobrazeno 1 - 10
of 24
pro vyhledávání: '"G. Heidelberger"'
Autor:
Jozef Novák, Roman Stoklas, Peter Kordos, Dagmar Gregušová, K. Cico, M. Marso, G. Heidelberger
Publikováno v:
physica status solidi c. 4:2720-2723
We report on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with MOCVD deposited Al2O3 as a gate oxide. Properties of MOSHFETs with 9 nm and 14 nm thick Al2O3 are compared with conventional HFETs prepared simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7898fb6723ecd5c41c64e6cb8b229798
https://doi.org/10.1002/pssc.200674828
https://doi.org/10.1002/pssc.200674828
Autor:
Hilde Hardtdegen, G. Heidelberger, N. Kaluza, H. L. Bay, Michel Marso, Yong Suk Cho, Konrad Wirtz, R. Steins, M. von der Ahe
Publikováno v:
Applied Physics A. 87:491-498
This paper reports on new approaches for growth control of GaN-based heterostructures for high frequency and high power application. First in situ methods are presented and their further development discussed [1]. The development leads to a greatly i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a0c9be23065efdb5366df8958084cb
https://doi.org/10.1007/s00339-007-3933-9
https://doi.org/10.1007/s00339-007-3933-9
Publikováno v:
IEEE Transactions on Electron Devices. 53:1517-1523
In this paper, the influence of a 10-nm-thick silicon-dioxide layer, as a passivation or as a gate insulation, on the performance of heterojunction field-effect transistors (HFETs) and metal-oxide-semiconductor HFETs (MOSHFETs), based on an undoped A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42a2b4fa777591f22ff2d7a03c903461
https://doi.org/10.1109/ted.2006.875819
https://doi.org/10.1109/ted.2006.875819
Publikováno v:
physica status solidi c. 3:2261-2264
The optoelectronic properties of MSM diodes that are based on an AlGaN/GaN HEMT layer system are investigated as function of the applied bias. For low voltages, the two-dimensional electron gas acts as a barrier for the depletion layer. Therefore, on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb5873e7b474cc10d89f4d8e63eadd54
https://doi.org/10.1002/pssc.200565127
https://doi.org/10.1002/pssc.200565127
Publikováno v:
physica status solidi (a). 203:1876-1881
In this comparative study we investigate AlGaN/GaN-based unpassivated and passivated HFETs and MOSHFETs with regards to DC-, RF-, and power-performance. For optimal comparability, all devices emanate from the same wafer consisting of a SiC-substrate,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb640aa895c26be9103d19282b83c86
https://doi.org/10.1002/pssa.200565249
https://doi.org/10.1002/pssa.200565249
Publikováno v:
IEEE Electron Device Letters 27, 945-947 (2006). doi:10.1109/LED.2006.886705
In this letter, the performance of AlGaN/GaN-based metal-semiconductor-metal (MSM) varactor diodes based on HFET and MOSHFET layer systems is investigated. Passivated HFET MSM devices are coated with a 10-nm-thick SiO2 layer between the electrodes; i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::029b3678ba2a9c971427aa90b179336e
https://doi.org/10.1109/led.2006.886705
https://doi.org/10.1109/led.2006.886705
Publikováno v:
2006 International Conference on Advanced Semiconductor Devices and Microsystems.
An increased RF-Performance of heterojunction field-effect transistor was found to be due to passivation and in addition a SiO2 insulation underneath the gate matallization. This leads to an increase of cutoff frequency from 17 GHz up to 24 GHz for d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7c693644e735f3fd44b177e9a6e1d55
https://doi.org/10.1109/asdam.2006.331166
https://doi.org/10.1109/asdam.2006.331166
Autor:
M. Roeckerath, M. Marso, A. Fox, R. Steins, N. Kaluza, Hans Lüth, Peter Kordos, G. Heidelberger, J. Schubert, M. Stefaniak
Publikováno v:
2006 International Conference on Advanced Semiconductor Devices and Microsystems.
Starting out from our well established process for AlGaN/GaN HFETs, the authors discuss ways to enrich the process in order to fabricate metal-oxide-semiconductor HFETs (MOSHFETs) with a gadolinium scandate (GdScO3) insulation layer. In particular, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f2af8675132e18295d8a7609664ab81
https://doi.org/10.1109/asdam.2006.331198
https://doi.org/10.1109/asdam.2006.331198
Publikováno v:
Second International Conference on 3G Mobile Communication Technologies (3G 2001).
The CDMA based UMTS transmission technology in which all users simultaneously share the same common range of spectrum gets rather affected by the system interference. The reduction of interference is therefore a key issue in the development of optima
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba12e2330053129ca88fbaf7a3c334c1
https://doi.org/10.1049/cp:20010003
https://doi.org/10.1049/cp:20010003
Publikováno v:
Applied physics letters 87, 143501 (2005). doi:10.1063/1.2058206
We report on SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs), which exhibit a 6.7 W/mm power density at 7 GHz. Unpassivated and SiO2-passivated heterostructure field-effect transistors (HFETs) were also in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66796aaa451b082ecdd9f17f12227c80
https://doi.org/10.1063/1.2058206
https://doi.org/10.1063/1.2058206