Zobrazeno 1 - 10
of 74
pro vyhledávání: '"G. Haacke"'
Publikováno v:
Journal of Coatings Technology. 71:87-94
Hindered amine light stabilizers (HALS) and UV absorbers (UVA) added to pigmented coatings adsorb on certain pigment and ultrafine oxide particles. Analysis of adsorption isotherms taken in xylene solutions and spectroscopic data revealed that chemis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c6d02c20c5241d4dd80a48edfcfdd1d
https://doi.org/10.1007/bf02697890
https://doi.org/10.1007/bf02697890
Publikováno v:
Analytical Chemistry. 70:3762-3765
The depth distribution of light stabilizers in coatings has been investigated by analyzing the stabilizer content of microtomed slices cut parallel to the coating surface. The analytical technique consists of extracting the unbound light stabilizers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7769529579b00ab1d58123366862b2b4
https://doi.org/10.1021/ac980171a
https://doi.org/10.1021/ac980171a
Publikováno v:
Progress in Organic Coatings. 34:75-83
Adsorption experiments have been carried out to understand the interactions responsible for UV light stabilizer adsorption on pigments in coatings. Light stabilizer adsorption on various pigments was studied in xylene solutions to eliminate potential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c746c0ed3cf427956583c3be978358e
https://doi.org/10.1016/s0300-9440(97)00119-7
https://doi.org/10.1016/s0300-9440(97)00119-7
Publikováno v:
Journal of Applied Physics. 75:2952-2956
Very high purity n‐type GaAs epilayers were grown by low pressure metalorganic chemical vapor deposition using triethylgallium and tertiarybutylarsine (TBA) or arsine (AsH3). Peak Hall mobilities of 209 000 cm2/V s at 45 K were observed for growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de72c83521c1c2323a3b73d18fe0e961
https://doi.org/10.1063/1.356191
https://doi.org/10.1063/1.356191
Publikováno v:
Journal of Applied Physics. 72:2797-2801
Residual donor and acceptor species were studied in a series of high purity n‐type InP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine and trimethylindium (TMIn). Over the entire range of growth conditions, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48f04f436f029d738566111512ae67ff
https://doi.org/10.1063/1.352344
https://doi.org/10.1063/1.352344
Autor:
S. P. Watkins, G. Haacke
Publikováno v:
Journal of Applied Physics. 69:1625-1630
Magnetophotoluminescence spectroscopy (MPL) has been used to ascertain the source of donor impurities in high‐purity GaAs grown by atmospheric pressure metalorganic vapor deposition using arsine and trimethylgallium. A linear correlation between ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be1af5f333685828de94ec1ae11f9824
https://doi.org/10.1063/1.347259
https://doi.org/10.1063/1.347259
Publikováno v:
Journal of Crystal Growth. 107:342-347
Metalorganic chemical vapor deposition was used to grow unintentionally doped GaAs epitaxial layers and compare the properties of arsine- and tertiarybutylarsine-grown layers. Nearly identical electrical transport properties were found when the galli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de5b7870e24619362207dd2b4b37cad8
https://doi.org/10.1016/0022-0248(91)90481-j
https://doi.org/10.1016/0022-0248(91)90481-j
Autor:
G. Haacke, Simon P. Watkins
Publikováno v:
Applied Physics Letters. 59:2263-2265
Undoped p‐type GaAs epilayers were grown by low‐pressure metalorganic chemical vapor deposition (MOCVD) at 650 °C and 76 Torr using either arsine or tertiarybutylarsine (TBA), and trimethylgallium (TMG). Extremely high‐purity precursors were u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::904e2771e934007d8dea6f7cdb7fea81
https://doi.org/10.1063/1.106064
https://doi.org/10.1063/1.106064
Publikováno v:
Applied Physics Letters. 56:478-480
Epitaxial layers of nominally undoped GaAs have been grown by metalorganic chemical vapor deposition using liquid tertiarybutylarsine and triethylgallium. n‐type layers were obtained having total residual shallow acceptor concentrations of ∼1013
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69f3c77604a83e780c1438b09a3a97f4
https://doi.org/10.1063/1.102771
https://doi.org/10.1063/1.102771