Constructing Long and Stable Ag‐Al2O3 Core–Shell Nanowires for Humidity Sensing and Triboelectric Energy Generation.

Autor: Fan, Jiajun¹ (AUTHOR), Wan, Tao¹ (AUTHOR) tao.wan@unsw.edu.au, He, Yilin² (AUTHOR), Liu, Chao¹ (AUTHOR), Mei, Tingting¹ (AUTHOR), Kuo, Yu‐Chieh¹ (AUTHOR), Feng, Ziheng¹ (AUTHOR), Guan, Peiyuan¹ (AUTHOR) peiyuan.guan@unsw.edu.au, Lin, Chun‐Ho¹ (AUTHOR), Li, Mengyao¹ (AUTHOR), Fu, Lin³ (AUTHOR), Tao, Mengdie³ (AUTHOR), Lin, Tongxi¹ (AUTHOR), Han, Zhaojun^4,5,6 (AUTHOR), Tang, Jianbo⁴ (AUTHOR), Xu, Yeqing⁷ (AUTHOR), Wang, Caiyun⁷ (AUTHOR), Zhang, Jin² (AUTHOR), Joshi, Rakesh¹ (AUTHOR) r.joshi@unsw.edu.au, Chu, Dewei¹ (AUTHOR)

Publikováno v: Small Structures. Dec2024, Vol. 5 Issue 12, p1-12. 12p.

Depth Distribution of Light Stabilizers in Coatings Analyzed by Supercritical Fluid Extraction-Gas Chromatography and Time-of-Flight Secondary Ion Mass Spectrometry

Autor: F. Andrawes, and G. Haacke, J. Brinen, T. Valcarcel

Publikováno v: Analytical Chemistry. 70:3762-3765

The depth distribution of light stabilizers in coatings has been investigated by analyzing the stabilizer content of microtomed slices cut parallel to the coating surface. The analytical technique consists of extracting the unbound light stabilizers

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7769529579b00ab1d58123366862b2b4
https://doi.org/10.1021/ac980171a

Transport measurements and donor spectra of very high purity GaAs grown using tertiarybutylarsine and triethylgallium

Autor: G. Haacke, Darlene M. Brake, S. P. Watkins

Publikováno v: Journal of Applied Physics. 75:2952-2956

Very high purity n‐type GaAs epilayers were grown by low pressure metalorganic chemical vapor deposition using triethylgallium and tertiarybutylarsine (TBA) or arsine (AsH3). Peak Hall mobilities of 209 000 cm2/V s at 45 K were observed for growth

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::de72c83521c1c2323a3b73d18fe0e961
https://doi.org/10.1063/1.356191

Residual donor and acceptor incorporation in InP grown using trimethylindium and tertiarybutylphosphine

Autor: G. Haacke, S. P. Watkins, E. M. Handler, M. K. Nissen

Publikováno v: Journal of Applied Physics. 72:2797-2801

Residual donor and acceptor species were studied in a series of high purity n‐type InP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine and trimethylindium (TMIn). Over the entire range of growth conditions, th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::48f04f436f029d738566111512ae67ff
https://doi.org/10.1063/1.352344

Control of residual impurity incorporation in tertiarybutylarsine-grown GaAs

Autor: G. Haacke, S.P. Watkins, H. Buckhard

Publikováno v: Journal of Crystal Growth. 107:342-347

Metalorganic chemical vapor deposition was used to grow unintentionally doped GaAs epitaxial layers and compare the properties of arsine- and tertiarybutylarsine-grown layers. Nearly identical electrical transport properties were found when the galli

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::de5b7870e24619362207dd2b4b37cad8
https://doi.org/10.1016/0022-0248(91)90481-j