Mikroelektronik 87 : Berichte der Informationstagung ME 87

Autor: G. Hoffmann, D. Holzmann, F. Jäger, K. Riedling, G. H. Schwuttke, K. A. Pandelisev, R. C. White, H. Holzmann, W. Kausel, G. Nanz, S. Selberherr, H. Pötzl, H. Leopold, R. Röhrer, G. Winkler, M. Thurner, K. Seiner, W. Tritremmel, G. Walther, Erwin Schoitsch, S. Hertl, G. Schaffar, K. Schmidt, H. Steinbrecher, F. Voggenberger, W. Windischhofer, R. Turba, J. Grabner, H. Aberl, F. Seifert, F. Buschbeck, K. Wallisch, Ch. Eichtinger, P. Wach, W. Bittinger, A. Kainz, M. Jestl, W. Beinstingl, K. Berthold, A. Köck, E. Gornik, G. Kloiber, F. Kreid, K. P. Schröcker, M. Schrödl, E. Brazda, G. Niedrist, K. Dietz, P. Fey, S. Frenkenberger, M. Furtner, B. Dejneka, A. Goiser, M. Sust, M. Kowatsch, Ch. Jorde, G. G. Thallinger, E. Mothwurf, E. Schubert, J. Steger, E. Trzeba, I. Awramow, R. Pucher, L. M. Auer, S. Schuy, H. Schima, L. Huber, A. Prodinger, H. Schmallegger, H. Thoma, H. Stöhr, W. Mayr, R. Steiner, O. Wiedenbauer, G. List, G. Wießpeiner, Th. Petsch, G. Doblhoff, D. Kirchner, O. Koudelka, A. Gierlinger, A. Ullrich, B. Braune, H. Horvat, U. Mayer, A. Gauby, A. Richter, K. R. Spie

Im Tagungsband zur Informationstagung'Mikroelektronik 87'werden die in Form von Kurzvorträgen und Posters dargebotenen Beiträge in übersichtlicher Form präsentiert und geben einen guten Überblick über den aktuellen Forschungs- und Wissensstand

Minority carrier lifetime in annealed silicon crystals containing oxygen

Autor: G. H. Schwuttke, H. F. Kappert, K. H. Yang

Publikováno v: Physica Status Solidi (a). 50:221-235

The influence of oxygen on the minority carrier lifetime of silicon is reported. Bulk annealed, oxygen-rich crystals subsequently sliced into wafers show lifetime degradation with annealing time. Silicon oxide precipitates and punched out dislocation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::42e1aabac5839dffb4f8c7870afc4bfd
https://doi.org/10.1002/pssa.2210500126

Electrical and structural properties of twin planes in dendritic web silicon

Autor: D.L. Meier, Shuo Wang, G. H. Schwuttke, Stephen Krause, Dieter K. Schroder, C. O. Jung, K. Joardar

Publikováno v: IEEE Transactions on Electron Devices. 35:911-918

The electrical and structural properties of dendritic silicon have been measured and compared with solar cell efficiencies. The twin planes in the web and their effect on minority carrier diffusion length were of particular interest. The starting mat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fbaebfcf0106d164069209645f67da94
https://doi.org/10.1109/16.3344

Low Cost Silicon for Solar Energy Conversion Applications

Autor: G. H. Schwuttke, Kei-Hsiung Yang, A. Kran, T.F. Ciszek

Publikováno v: IBM Journal of Research and Development. 22:335-345

Economically viable means of producing silicon solar cells for the conversion of solar energy into electric power are discussed. Emphasis is given to the discussion of crystal growth techniques capable of growing single-crystal silicon ribbons direct

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::243c98966c1218bebe15d04fec69133f
https://doi.org/10.1147/rd.224.0335

Solar-Grade Silicon by Directional Solidification in Carbon Crucibles

Autor: G. H. Schwuttke, Kei-Hsiung Yang, T. F. Ciszek

Publikováno v: IBM Journal of Research and Development. 23:270-277

Directional solidification of silicon in carbon crucibles was achieved by using two variations of the Bridgman-Stockbarger method. One was a static technique wherein liquid silicon in a carbon crucible was positioned in a tamperature gradient of abou

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bc839144cb75f472a7fbc66a9a9a6932
https://doi.org/10.1147/rd.233.0270