Zobrazeno 1 - 8
of 8
pro vyhledávání: '"G. H. Sarma"'
Autor:
G H Sarma, Poornima Pattanashetti
Publikováno v:
2014 International Conference on Advances in Electronics Computers and Communications.
The multichip packaging techniques have evolved over the years and have resulted in many solutions towards 3D integrated circuits. The key component to these technologies is Through Silicon Via. Typical TSV structures (2.5 micron diameter and 20 micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4991de1f92218315b25712335c4a0148
https://doi.org/10.1109/icaecc.2014.7002482
https://doi.org/10.1109/icaecc.2014.7002482
Publikováno v:
SPIE Proceedings.
The design of a 4x4 switch module of blocking architecture based on Ti:LiNbO3 has been developed and attempts have been made to fabricate the device. The design methodoogy and fabrication details are described. 1.© (1992) COPYRIGHT SPIE--The Interna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7c66ee29ade9ad4dcb52a581d5f4333
https://doi.org/10.1117/12.636997
https://doi.org/10.1117/12.636997
Autor:
Anil G. Joshi, G. H. Sarma
Publikováno v:
IETE Journal of Research. 28:494-497
This paper reports the studies conducted using scanning electron microscope (SEM) as a tool for optimizing laser trim parameters leading to reliable trimming. The samples drawn from the regular production lots use DUPONT 1400 BIROX series resistor pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74631e131f867aba9d6013db6899633f
https://doi.org/10.1080/03772063.1982.11452800
https://doi.org/10.1080/03772063.1982.11452800
Publikováno v:
Microelectronics Reliability. 23:161-165
In view of its complete automation, very high throughput, least in process variation, etc., laser trimming has been an industry standard in thick film technology. Random variations in print thickness, uncertainty of sheet resistivity in a paste lot a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3876cf1d75f67111e3ce4296d70172c
https://doi.org/10.1016/0026-2714(83)91382-3
https://doi.org/10.1016/0026-2714(83)91382-3
Publikováno v:
Journal of Vacuum Science and Technology. 7:588-592
Investigations were carried out regarding the feasibility of Kanthal resistive films in hybrid integrated circuits. The technique for deposition was conventional evaporation from a multistrand tungsten filament onto substrates at 325 °C, in vacua be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91daaedee70d2078304e1e20cb109335
https://doi.org/10.1116/1.1315883
https://doi.org/10.1116/1.1315883
Publikováno v:
Indian journal of experimental biology. 18(5)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::dbb634b32e89b508668f04b4e29c2283
https://pubmed.ncbi.nlm.nih.gov/7429568
https://pubmed.ncbi.nlm.nih.gov/7429568
Publikováno v:
Journal of Materials Science Letters. 6:633-634
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66a785c79648178a7bc02d846697d468
https://doi.org/10.1007/bf01770907
https://doi.org/10.1007/bf01770907
Publikováno v:
Journal of Applied Physics. 63:2867-2868
Experimental evidence that phosphorus in silicon is neutralized by hydrogenation is presented by measuring changes in sheet resistance and Hall mobility carrier in heavily phosphorus‐doped polycrystalline films.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4faa21f23ee89f7642843edb5596878
https://doi.org/10.1063/1.340943
https://doi.org/10.1063/1.340943