Výsledky vyhledávání - "G. H. Kruithof"

Apertif: Phased array feeds for the Westerbork Synthesis Radio Telescope. System overview and performance characteristics

Autor: W. A. van Cappellen, T. A. Oosterloo, M. A. W. Verheijen, E. A. K. Adams, B. Adebahr, R. Braun, K. M. Hess, H. Holties, J. M. van der Hulst, B. Hut, E. Kooistra, J. van Leeuwen, G. M. Loose, R. Morganti, V. A. Moss, E. Orrú, M. Ruiter, A. P. Schoenmakers, N. J. Vermaas, S. J. Wijnholds, A. S. van Amesfoort, M. J. Arts, J. J. Attema, L. Bakker, C. G. Bassa, J. E. Bast, P. Benthem, R. Beukema, R. Blaauw, W. J. G. de Blok, M. Bouwhuis, R. H. van den Brink, L. Connor, A. H. W. M. Coolen, S. Damstra, G. N. J. van Diepen, R. de Goei, H. Dénes, M. Drost, N. Ebbendorf, B. S. Frank, D. W. Gardenier, M. Gerbers, Y. G. Grange, T. Grit, A. W. Gunst, N. Gupta, M. V. Ivashina, G. I. G. Józsa, G. H. Janssen, A. Koster, G. H. Kruithof, S. J. Kuindersma, A. Kutkin, D. M. Lucero, Y. Maan, F. M. Maccagni, J. van der Marel, A. Mika, J. Morawietz, H. Mulder, E. Mulder, M. J. Norden, A. R. Offringa, L. C. Oostrum, R. E. Overeem, Z. Paragi, H. J. Pepping, E. Petroff, D. J. Pisano, A. G. Polatidis, P. Prasad, J. P. R. de Reijer, J. W. Romein, J. Schaap, G. W. Schoonderbeek, R. Schulz, D. van der Schuur, A. Sclocco, J. J. Sluman, R. Smits, B. W. Stappers, S. M. Straal, K. J. C. Stuurwold, J. Verstappen, D. Vohl, K. J. Wierenga, E. E. M. Woestenburg, A. W. Zanting, J. Ziemke

Publikováno v: Astronomy and astrophysics, 658:A146. EDP Sciences

We describe the APERture Tile In Focus (Apertif) system, a phased array feed (PAF) upgrade of the Westerbork Synthesis Radio Telescope that transforms this telescope into a high-sensitivity, wide-field-of-view L-band imaging and transient survey inst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2843549241de224a53add3512aaf8a8
https://resolver.caltech.edu/CaltechAUTHORS:20220216-572639625

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Accounting, Charging and Billing for Dynamic Service Composition Chains

Autor: G. H. Kruithof, George Huitema, F.J. Rumph

Publikováno v: Information Systems Development ISBN: 9780387848099
ISD
Papadopoulos, S.A.Wojtkowski, W., Information Systems Development : Towards a Service Provision Society. 17th International Conference on Information Systems Development, ISD 2008, 25-27 August 2008, Paphos, 41-48

Services delivered to an end user can be composed of numerous subservices and form chains of composed services. These service composition chains traditionally consist of a static set of business entities. However, in order to increase business agilit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87c581b9c87f4bb82b74b2a8df1927c4
https://doi.org/10.1007/b137171_5

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Interaction between moving flux lines and a two-dimensional electron gas

Autor: G. H. Kruithof, T. M. Klapwijk, P. C. Van Son

Publikováno v: Physical Review Letters. 67:2725-2728

A novel method is presented to study the dynamics of vortices in superconducting films at fields close to the upper critical magnetic field. It is shown that moving flux lines in the gate of a superconductor-oxide-semiconductor field-effect transisto

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::111a1e926abe32bfe95ee992bf30136c
https://doi.org/10.1103/physrevlett.67.2725

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Current contacts and the breakdown of the quantum Hall effect

Autor: G. H. Kruithof, T. M. Klapwijk, P. C. Van Son

Publikováno v: Physical Review. B: Condensed Matter and Materials Physics, 42(17), 11267-11273. AMER PHYSICAL SOC

The nonlinearities in the I-V characteristics have been studied of high-mobility Si metal oxide semiconductor field-effect transistors in the quantum Hall regime. The breakdown curves were measured with different sets of voltage contacts and for diff

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eaa7c9007b2f5f5cd070c9e67db734e6
https://doi.org/10.1103/physrevb.42.11267

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Top Down Versus Bottom Up in Service-Oriented Integration: An MDA-Based Solution for Minimizing Technology Coupling

Autor: Theo Dirk Meijler, G. H. Kruithof, Nick van Beest

Publikováno v: Service-Oriented Computing – ICSOC 2007 ISBN: 9783540749738
ICSOC

Service-oriented integration typically combines top-down development with bottom-up reverse engineering. Top-down development starts from requirements and ends with implementation. Bottom-up reverse engineering starts from available components and da

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6507a398dfc6a74875d7e74115b614aa
https://doi.org/10.1007/11948148_44

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Intrinsic sequence in the breakdown of the quantum Hall effect

Autor: P. C. Van Son, G. H. Kruithof, T. M. Klapwijk

Publikováno v: Surface Science, 229(1-3), 57-59. ELSEVIER SCIENCE BV

The breakdown of the quantum Hall effect in high-mobility Si-MOSFETs occurs in a series of resistance steps as the current is increased beyond a critical value. These steps, that correspond to the successive breakdown of spatially localized parts of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::482f936a74e75d077ac9f5e2f86feec7
https://research.rug.nl/en/publications/86fa08f6-b876-466a-9c88-ce50b6202394

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Temperature and interface-roughness dependence of the electron mobility in high-mobility Si(100) inversion layers below 4.2 K

Autor: T. M. Klapwijk, G. H. Kruithof, S. Bakker

Publikováno v: Physical Review. B: Condensed Matter and Materials Physics, 43(8), 6642-6649. AMER PHYSICAL SOC

An analysis is made of the mechanisms limiting the mobility in Si(100) inversion layers that have peak mobilities (at 4.2 K) ranging from 2.0 to 2.5 m2/V s. At high electron density, this work focuses on the statistical properties of the Si-SiO2 inte

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1750aace230d06f448c34eccad3fe107
https://pubmed.ncbi.nlm.nih.gov/9998107

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Folklore and Science in High Mobility MOSFETs

Autor: G. H. Kruithof, T. M. Klapwijk

Publikováno v: Condensed Systems of Low Dimensionality ISBN: 9781468413502

In the last decade a gradual increase in the mobility of silicon MOSFETs has occurred. Interest in higher mobilities is primarily related to the discovery of the Quantum Hall effect in 1980, for which high mobilities are essential. At the same time i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a881287db882656a4843976f2edb764e
https://doi.org/10.1007/978-1-4684-1348-9_19

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