Výsledky vyhledávání - "G. H. Beckhart"

Low dislocation density GaAs grown by the vertical Bridgman technique

Autor: D. Francomano, K. M. Burke, G. H. Beckhart, R. E. Kremer

Publikováno v: Journal of Materials Research. 5:1468-1474

We have developed a new growth process for GaAs that combines advantages found in several methods currently in commercial use, while at the same time minimizing many of the problems inherent in these presently used processes. The new technique, a for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::463a87426b41ca66164eb32b5de1d696
https://doi.org/10.1557/jmr.1990.1468

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Vertical Bridgman Growth of GaAs

Autor: D. Francomano, T. Miller, R. E. Kremer, G. H. Beckhart, K. M. Burke

Publikováno v: MRS Proceedings. 144

We have developed a process to grow both undoped, semi-insulating (SI) and silicon-doped, semiconducting (SC) GaAs using a vertical Bridgman method. The technique combines advantages of both liquid encapsulated Czochralski (LEC) and horizontal Bridgm

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5da843de270d6199bc22446a28eab5aa
https://doi.org/10.1557/proc-144-15

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