Zobrazeno 1 - 10
of 181
pro vyhledávání: '"G. Guegan"'
Publikováno v:
Journal of Advanced Ceramics, Vol 7, Iss 2, Pp 160-168 (2018)
Abstract In this work, we synthesized cubic perovskite ceramics of the whole La1–x Sr x CoO3 (0 ≤ x ≤ 1) solid solution for the first time. Synthesis was carried out by solid state reaction and conventional sintering to reach dense ceramics. Fo
Externí odkaz:
https://doaj.org/article/6800bd0c0f874fc6b3b31708f6077e7f
Publikováno v:
AIP Advances, Vol 3, Iss 4, Pp 042111-042111 (2013)
We report a dielectric relaxation in BaTiO3-based ferroelectric thin films of different composition and with several growth modes: sputtering (with and without magnetron) and sol-gel. The relaxation was observed at cryogenic temperatures (T < 100 K)
Externí odkaz:
https://doaj.org/article/550c156585134edbba4b5061e166cf87
Autor:
R. Gwoziecki, C. Raynaud, P. Touret, O. Gonnard, J. Pretet, Gilles Gouget, Simon Deleonibus, G. Guegan
Publikováno v:
Solid-State Electronics. 53:741-745
A detailed analysis of the body potential impact on the performance enhancement of BC pMOSFET when the body is not contacted, is reported in this paper. Investigations on floating-body device behavior reveal that these new floating body effect leads
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00caf514c310b8acfb1a185b418e311f
https://doi.org/10.1016/j.sse.2009.02.011
https://doi.org/10.1016/j.sse.2009.02.011
Publikováno v:
Solid-State Electronics. 48:2213-2217
To analyse electrostatic disorder in doped sub-100 nm Si-MOSFET channels we investigate the sub-threshold regime by transport spectroscopy at very low temperature. We measure resonances in the differential drain current and analyse their distribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d5a694f2ce5e5595987f8a99fcb5595
https://doi.org/10.1016/j.sse.2004.04.013
https://doi.org/10.1016/j.sse.2004.04.013
Autor:
Xavier Jehl, Simon Deleonibus, G. Bertrand, F. Balestra, Marc Sanquer, G. Guegan, Bernard Previtali
Publikováno v:
Solid-State Electronics. 48:505-509
Thanks to ultimate Si nMOSFETs with physical gate length down to 16 nm, the main challenges related to conventional transistors have been estimated. Short channel effect control is difficult below 40 nm due to the large TED of BF 2 halos. Nevertheles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cfd14ba364fc8045ad8c15d87c4cf4f
https://doi.org/10.1016/j.sse.2003.09.026
https://doi.org/10.1016/j.sse.2003.09.026
Publikováno v:
IEEE Transactions On Nanotechnology. 2:308-313
Coulomb blockade has been widely reported in silicon and metallic structures without intentional tunnel barriers. In particular, a simple constriction in silicon-on-insulator (SOI) allows to build a three-terminal silicon single-electron transistor (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbdc317951fb9b0f9e76b02e8300e177
https://doi.org/10.1109/tnano.2003.820512
https://doi.org/10.1109/tnano.2003.820512
Publikováno v:
The European Physical Journal B. 26:503-508
We report observation of the Kondo effect in the Coulomb blockade oscillations of an impurity quantum dot (IQD). This IQD is formed in the channel of a 100 nm gate length Silicon MOSFET. The quantitative analysis of the anomalous temperature and volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79577c6e49e9b8531590772083cba898
https://doi.org/10.1140/epjb/e20020119
https://doi.org/10.1140/epjb/e20020119
Autor:
G. Guegan, B. Cretu, Stefan Kubicek, C. Leroux, G. Reimbold, B. Marchand, Gerard Ghibaudo, K. DeMeyer, Simon Deleonibus, D. Blachier, F. Balestra
Publikováno v:
Solid-State Electronics. 46:337-342
A comprehensive analytical model of the secondary impact ionization (2II)-induced gate current is developed based on the lucky electron concept. This model takes the substrate bias and the temperature dependence of the mechanism very well into accoun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e3584adca0f53eb73381c1eecd7b5dc
https://doi.org/10.1016/s0038-1101(01)00105-8
https://doi.org/10.1016/s0038-1101(01)00105-8
A 0.10 μm buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocket
Autor:
Christian Caillat, P. Mur, M. Heitzmann, B. Dal’zotto, M.E. Nier, Simon Deleonibus, S. Tedesco, G. Guegan
Publikováno v:
Solid-State Electronics. 46:343-348
Designs of 0.10 μm buried p-channel devices have been studied and compared. We demonstrate that silicon p-MOSFETs with n-type polysilicon gate could achieve a good control of short channel effects. Based on new channel design optimisation using thro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0698d62dffc573821e0c2bdef334f86a
https://doi.org/10.1016/s0038-1101(01)00106-x
https://doi.org/10.1016/s0038-1101(01)00106-x
Autor:
G. Lecarval, J.L. Dichiaro, M. Heitzmann, A.M. Papon, P. Mur, F. Jourdan, Christian Caillat, F. Allain, François Martin, M.E. Nier, P. Fugier, B. Dal’zotto, Simon Deleonibus, Alain Toffoli, G. Guegan, Bernard Previtali, S. Tedesco, S. Biswas
Publikováno v:
Solid-State Electronics. 46:349-352
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bba86f54bad8e82cf20020d708db89f
https://doi.org/10.1016/s0038-1101(01)00107-1
https://doi.org/10.1016/s0038-1101(01)00107-1