Zobrazeno 1 - 10
of 117
pro vyhledávání: '"G. Grandpierre"'
Autor:
J Villarroel, A G Grandpierre
Publikováno v:
Journal of Physics B: Atomic, Molecular and Optical Physics. 38:2601-2612
We provide a statistical model that accounts for the effects of dispersion on stimulated Raman scattering cross-talk in wavelength division multiplexed systems with random initial binary data. When either the input power is not too large or the numbe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24fb9d7255b34f80f8e92b41ca635855
https://doi.org/10.1088/0953-4075/38/15/002
https://doi.org/10.1088/0953-4075/38/15/002
Autor:
H.J. von Bardeleben, A. Aoudia, M. Gauneau, V. Mazoyer, E. Rzepka, J.C. Launay, Y. Marfaing, G. Grandpierre, B. Lambert, M. Schoisswohl, Robert Triboulet
Publikováno v:
Optical Materials. 4:267-270
From correlated SIMS and EPR studies on high resistive, vanadium doped CdTe and ZnCdTe bulk crystals we have determined the total V concentration [V] and the [V3+] and [V2+] concentration respectively. This allows us to estimate the effective trap co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::860b72ee60906129d1d59b20deabb9dc
https://doi.org/10.1016/0925-3467(94)00072-7
https://doi.org/10.1016/0925-3467(94)00072-7
Publikováno v:
Archives des maladies du coeur et des vaisseaux. 39
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::fe9a9d1fb1ea7231e27c53ead5e0c5c7
https://pubmed.ncbi.nlm.nih.gov/20989421
https://pubmed.ncbi.nlm.nih.gov/20989421
Publikováno v:
Journal of Applied Physics. 71:5847-5852
Some (AlGa)Sb layers grown by molecular beam epitaxy were found unexpectedly to be n type. Characterizing these layers by secondary ion mass spectrometry it was observed that they contained selenium (Se). Systematic analyses showed that selenium was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::188a324ecf16716572bf2f1c2a051f16
https://doi.org/10.1063/1.350480
https://doi.org/10.1063/1.350480
Publikováno v:
Semiconductor Science and Technology. 5:616-619
The total iron and the Fe3+ concentration are determined by means of SIMS and EPR measurements. The deduced electron concentration is in good agreement with the results given by Hall effect measurements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39105b67e6d4c0f70f7634a3a29ce6db
https://doi.org/10.1088/0268-1242/5/6/028
https://doi.org/10.1088/0268-1242/5/6/028
Publikováno v:
Journal of Physics: Condensed Matter. 2:479-483
Rare earths (REs) diluted into MBE grown and synthesised n-type InP samples create an acceptor-like level (at 30 meV for Yb and 60 meV for Er) below the conduction band; the activation energies are deduced from temperature dependent Hall effect measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbbe39409bd3c200f743ac2c5ba68215
https://doi.org/10.1088/0953-8984/2/2/022
https://doi.org/10.1088/0953-8984/2/2/022
Autor:
O. Mouton, D. Guilhem, F. Cartier, D. Collignon, G. Grandpierre, L. Hourdin, D. Paradis, A. Coeuret, Ch. Noel, O. Pierret, M. Caron, M. Mouillet
Publikováno v:
2007 IEEE Particle Accelerator Conference (PAC).
AIRIX is a high current accelerator designed for flash X-ray radiography. The electron beam produced into a vacuum diode (2 kA, 3.5 MV to 3.8 MV, 60 ns) is extracted from a velvet cold cathode. For a complete beam characterization, at the diode outpu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b54bb468e96b620e8186f71a20db982
https://doi.org/10.1109/pac.2007.4440388
https://doi.org/10.1109/pac.2007.4440388
Publikováno v:
IEEE Photonics Technology Letters. 10:168-170
Using a powerful postamplifier, a remotely pumped preamplifier, chromatic dispersion compensation and forward error correction, a repeaterless transmission distance of 461 km has been achieved at 8/spl times/2.5 Gb/s. This experiment demonstrates the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f45e957933394bfb05cbe924e7d9895
https://doi.org/10.1109/68.651152
https://doi.org/10.1109/68.651152
Autor:
Michael Kubis, J. Horst, A. G. Grandpierre, Roberto Schiwon, M. Friedrich, C. Berger, S. Trepte
Publikováno v:
SPIE Proceedings.
As chip dimensions decrease, I-line processes remain of interest for most uncritical layers: they provide the needed performance at a low cost and high throughput. However the critical dimensions (CD) and overlay requirements for the newest technolog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7587f1670a8aeee748a558c4df590d83
https://doi.org/10.1117/12.655131
https://doi.org/10.1117/12.655131
Publikováno v:
SPIE Proceedings.
For capacity reasons, it is interesting for us to have the flexibility of switching lithography processes between DUV and I-line steppers. The following discussion concentrates on high energy tilted implants of CMOS technology, critical enough to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb8b8aab74aef26ae96821ca6a53c06d
https://doi.org/10.1117/12.655163
https://doi.org/10.1117/12.655163