Zobrazeno 1 - 10
of 120
pro vyhledávání: '"G. Glastre"'
Publikováno v:
IEEE Photonics Journal, Vol 2, Iss 3, Pp 460-468 (2010)
While InGaAs absorption material has been used for various applications up to 1.6-μm wavelength, specific designs for low-level detection have become of main interest using high responsivity and low-dark-current detectors. By adding an avalanche mul
Externí odkaz:
https://doaj.org/article/1d7ad0b4e4a64c14b335f2a72bd45cf7
Autor:
Bernadette Duval, Fabrice Blache, Mohand Achouche, G. Glastre, Philippe Charbonnier, Philippe Angelini, D. Lanteri, Philippe Chanclou, Christophe Caillaud
Publikováno v:
Journal of Lightwave Technology. 33:1596-1601
Emergence of new applications like cloud computing, video on demand or deployment of high-speed cellular network lead to an increasing demand of high-speed short reach transmission for access network or datacenter. Due to the low sensitivity of PIN r
Autor:
F. Pommereau, Mohand Achouche, Jean-Francois Paret, Maria Anagnosti, G. Glastre, Fabrice Blache, Christophe Caillaud
Publikováno v:
Journal of Lightwave Technology. 33:1186-1190
We present a preamplified high-speed photoreceiver comprising a unitraveling carrier photodiode (UTC) monolithically integrated with a semiconductor optical amplifier (SOA). The SOA-UTC photoreceiver exhibits above 95-GHz 3-dB bandwidth, 8-dB noise f
Autor:
B. Duval, J.L. Gentner, Fabrice Blache, Karim Mekhazni, Sophie Barbet, Christophe Caillaud, Helene Debregeas, Romain Brenot, B. Saturnin, F. Lelarge, G. Glastre, Michel Goix, O. Drisse, T. D. H. Nguyen, F. Pommereau, Mohand Achouche, D. Lanteri, E. Derouin, F. Martin, Alexandre Garreau, Catherine Fortin, J.-G. Provost, J.-F. Paret, Philippe Charbonnier, Y. Moustapha-Rabault
Publikováno v:
OFC
We present an electro-absorption modulated laser with 6dBm modulated power leading to record power budget NRZ transmissions at 1.55μm: 37dB at 10Gb/s over 50km and 30dB at 28Gb/s over 10km with a pre-amplified photodiode.
Publikováno v:
IEEE Photonics Journal, Vol 2, Iss 3, Pp 460-468 (2010)
While InGaAs absorption material has been used for various applications up to 1.6-μm wavelength, specific designs for low-level detection have become of main interest using high responsivity and low-dark-current detectors. By adding an avalanche mul
Autor:
Sophie Barbet, Paul Kolodner, Francois Brillouet, David T. Neilson, Evans Yifan Chen, Franck Mallecot, H. Gariah, Frederic Pommereau, Lawrence L. Buhl, Douglas M. Gill, F. Perego, R. Farah, F.P. Klemens, A. Gasparyan, Florent Franchin, R. Keller, C. Bolle, Nicolas Chimot, J.-G. Provost, Jeffrey H. Sinsky, H. Debregeas, R. Papazian, Y. Low, R. Frahm, Francois Lelarge, E. Sutter, Flavio Pardo, Mark Cappuzzo, Paola Galli, D.A. Ramsey, N. Lagay, Nagesh R. Basavanhally, V. Guja, D. Palmisano, E. M. Simon, Mark Earnshaw, J.L. Gentner, M. Achouche, D. Lanteri, F. Blanche, G. Glastre, L. Fratta, P. Bernasconi, Olivier Drisse, R. Peruta, Jean Decobert, S. Jovane, T. Salamon, Mahmound Rasras, L.T. Gomez, G. Azzini
Publikováno v:
IEEE Photonics Technology Letters. 24:1657-1659
Compact parallel transmitters and receivers with an aggregate capacity of 107 Gb/s are built through hybrid integration of arrays of ten 100-GHz spaced directly modulated lasers, arrays of ten avalanche photodiodes, and high-index contrast silica arr
Autor:
S. Bellini, M. Achouche, Francois Lelarge, Christophe Caillaud, D. Carpentier, Romain Brenot, G. Glastre, Olivier Drisse, J-F Paret
Publikováno v:
IEEE Photonics Technology Letters. 24:897-899
We demonstrate the monolithic integration of a buried heterostructure semiconductor optical amplifier (SOA) and a deep ridge PIN photodiode for high-speed on-off keying links at 1.55 μm. The structure allows separate optimization of the SOA and the
Autor:
Delphine Lanteri, Maria Anagnosti, M. Achouche, Jean-Francois Paret, G. Glastre, Christophe Caillaud
Publikováno v:
26th International Conference on Indium Phosphide and Related Materials (IPRM).
In this paper we present a high-speed photo-detector comprising a uni-traveling carrier photo-diode (UTC PD) monolithically integrated with a semiconductor optical amplifier (SOA) for 100Gbit/s applications. This new pre-amplified photoreceiver desig
Publikováno v:
Journal of Crystal Growth. :609-613
Some key growth issues for InAsSb mid-infrared detectors are presented. We investigate the influence of growth temperature and Sb/As flux ratio on InAsSb alloy composition and on carrier lifetime. The Sb mole fraction in InAs1−xSbx depends linearly
Autor:
Nicolas Grandjean, Lydie Dua, G. Glastre, Fabrice Semond, P. Legagneux, Jean Massies, Jean-Yves Duboz
Publikováno v:
physica status solidi (a). 183:35-39
We have demonstrated an original approach for fabricating microcavities in GaN grown on Si. Holes are etched in the Si substrate and highly reflective dielectric mirrors are deposited on both front and back sides. The cavity has been optically charac