Zobrazeno 1 - 10
of 1 299
pro vyhledávání: '"G. Ghibaudo"'
Autor:
T. Boutchacha, G. Ghibaudo
Publikováno v:
Active and Passive Electronic Components, Vol 2020 (2020)
Thorough investigations of the low-frequency noise (LFN) in a fully depleted silicon-on-insulator technology node have been accomplished, pointing out on the contribution of the buried oxide (BOX) and the Si-BOX interface to the total drain current n
Externí odkaz:
https://doaj.org/article/17104ceb62d946e1999ced514f2f9609
Autor:
Thomas Lorin, William Vandendaele, Romain Gwoziecki, Yannick Baines, Jerome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, G. Ghibaudo, F. Gaillard
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 956-964 (2018)
Cathode related current collapse effect in GaN on Si Schottky barrier diodes is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-Van Der Pauw are associated with temperature dependent dynamic RON transie
Externí odkaz:
https://doaj.org/article/984d9e63920f464baddde8de23e7191d
Autor:
K. Bennamane, G. Ghibaudo
Publikováno v:
Active and Passive Electronic Components, Vol 2019 (2019)
A new concept of differential effective mobility is proposed. It characterizes the effective mobility of an increment of drain current resulting from a small increase of inversion charge in MOSFET channel. It allows us to show that the effective mobi
Externí odkaz:
https://doaj.org/article/d1279363222c45c69a853718582c7021
Publikováno v:
IEEE Transactions on Electron Devices. 70:845-849
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Akademický článek
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Autor:
M. Casse, B. Cardoso Paz, F. Bergamaschi, G. Ghibaudo, F. Serra, G. Billiot, A. G. M. Jansen, Q. Berlingard, S. Martinie, T. Bedecarrats, L. Contamin, A. Juge, E. Vincent, P. Galy, M.A Pavanello, M. Vinet, T. Meunier, F. Gaillard
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
Donghyun Kim, C. Theodorou, A. Chanuel, Y. Gobil, M. Charles, E. Morvan, Jae Woo Lee, M. Mouis, G. Ghibaudo
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2022, 197, pp.108448. ⟨10.1016/j.sse.2022.108448⟩
Solid-State Electronics, 2022, 197, pp.108448. ⟨10.1016/j.sse.2022.108448⟩
International audience; A detailed electrical characterization and transistor parameter extraction on 200mm CMOS compatible GaN/Si HEMTs was performed down to deep cryogenic temperatures. The main transistor parameters (threshold voltage Vth, low-fie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::768c58d787ced59bfdd936ac0949ab59
https://hal.science/hal-03769945/document
https://hal.science/hal-03769945/document
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2022, 194, pp.108319. ⟨10.1016/j.sse.2022.108319⟩
Solid-State Electronics, 2022, 194, pp.108319. ⟨10.1016/j.sse.2022.108319⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f205cc13216cafe47d29eaf69481eb87
https://hal.science/hal-03974981
https://hal.science/hal-03974981
Autor:
E. Catapano, A. Aprà, M. Cassé, F. Gaillard, S. de Franceschi, T. Meunier, M. Vinet, G. Ghibaudo
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2022, 193, pp.108291. ⟨10.1016/j.sse.2022.108291⟩
Solid-State Electronics, 2022, 193, pp.108291. ⟨10.1016/j.sse.2022.108291⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d320327f15c8d03d1d6aa4bd2d567cc8
https://hal.science/hal-03974993
https://hal.science/hal-03974993