Zobrazeno 1 - 10
of 71
pro vyhledávání: '"G. Gautherin"'
Publikováno v:
ChemInform. 22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25c59604accd8761021853626f5a3f94
https://doi.org/10.1002/chin.199124260
https://doi.org/10.1002/chin.199124260
Publikováno v:
Applied Surface Science. 53:353-357
WN x thin films (0.5⩽ x ⩽1) were deposited at room temperature on clean silicon substrates by reactive ion-beam sputter deposition in an UHV set-up. Properties such as morphology, microstructure, density, composition, mechanical stress and resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09d273bf0b8fed8b4baa93f428808f0c
https://doi.org/10.1016/0169-4332(91)90285-r
https://doi.org/10.1016/0169-4332(91)90285-r
Publikováno v:
Journal of The Electrochemical Society. 138:1084-1089
Oxidation kinetics of silicon nitride films in wet oxygen at 900 and 1000°C, deposited at room temperature by ion-beam sputtering is studied. Two compositions of Si x N y were used: quasistoichiometric (N/Si=1.4) and silicon-rich (N/Si=0.8). The res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7728b9463c7402ff0bc7e2b9f96763f3
https://doi.org/10.1149/1.2085720
https://doi.org/10.1149/1.2085720
Publikováno v:
Journal of Applied Physics. 68:2780-2790
We have studied boron nitride films deposited at room temperature by ion‐beam‐assisted deposition in an ultrahigh vacuum apparatus, with ion accelerating voltages ranging between 0.25 and 2 kV. By using complementarily in situ Auger electron spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1dcf0ba1e795aa2e7afe384925ab73f
https://doi.org/10.1063/1.347173
https://doi.org/10.1063/1.347173
Publikováno v:
Thin Solid Films. :181-188
Almost all plasma- and ion-beam-based deposition techniques involve energetic particle bombardment of the growing film and lead to a more or less significant incorporation of noble gas. This incorporation is considered by most researchers to have a n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac343c668051ac37341040b104d48036
https://doi.org/10.1016/s0040-6090(05)80026-4
https://doi.org/10.1016/s0040-6090(05)80026-4
Publikováno v:
Thin Solid Films. 184:117-123
The first results are reported on Si1−xGex epitaxial layers grown on Si(100) by ion beam sputter deposition in ultrahigh vacuum. Growth temperatures were varied from 300 to 700°C, for compositions in the range 0.05 < x < 0.5. The properties of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c432da9ecfe28c897b0603385c78860c
https://doi.org/10.1016/0040-6090(90)90404-2
https://doi.org/10.1016/0040-6090(90)90404-2
Publikováno v:
Interaction of Charged Particles with Solids and Surfaces ISBN: 9781468480283
This paper reports the results on a study of rare-gas incorporation in films deposited by ion beam sputter deposition (IBSD). It has been observed that electrical properties of metallic and semiconductor films depend on the nature and concentration o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b37d6e0b96f7c4875ebe08942abe88b
https://doi.org/10.1007/978-1-4684-8026-9_42
https://doi.org/10.1007/978-1-4684-8026-9_42
Publikováno v:
Japanese Journal of Applied Physics. 30:1469
Optical properties and mechanical stress of silicon nitride films deposited at room temperature by ion-beam sputtering are studied for various compositions in the range of N/Si=0.6 to N/Si=1.4. The refractive index and mechanical stress are investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66711df9e5a145ead5186a974f736022
https://doi.org/10.1143/jjap.30.1469
https://doi.org/10.1143/jjap.30.1469
Autor:
C Lejeune, G Gautherin
Publikováno v:
Vacuum. 34:251-257
An ion source is presented which produces a continuous, uncontaminated, high current (1–100 ωA) beam of arsenic with a high charge utilization efficiency. The main advantages of this source are related to two unique features: (1) the unmagnetized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03cf74fa1d5a07dee7faba8956f64822
https://doi.org/10.1016/0042-207x(84)90137-4
https://doi.org/10.1016/0042-207x(84)90137-4